opto d213
Abstract: d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint
Text: MOTOROLA Order this document by MOCD213/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolator MOCD213 Transistor Output [CTR = 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
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MOCD213/D
MOCD213
MOCD213/D*
OptoelectronicsMOCD213/D
opto d213
d213 opto
D213
MOCD213
RS481A
MOCD213 T&R
soic8 footprint
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MOCD211
Abstract: D211 RS481A motorola opto coupler
Text: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [CTR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD211/D
MOCD211
MOCD211
MOCD211/D*
OptoelectronicsMOCD211/D
D211
RS481A
motorola opto coupler
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MOC221
Abstract: MOC223 RS481A soic8 footprint motorola silicon dual diode common cathode MOC221 MOTOROLA
Text: MOTOROLA Order this document by MOC223/D SEMICONDUCTOR TECHNICAL DATA Small Outline Optoisolators MOC223 Darlington Output [CTR = 500% Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable,
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MOC223/D
MOC223
MOC223/D*
MOC221
MOC223
RS481A
soic8 footprint
motorola silicon dual diode common cathode
MOC221 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD217/D
MOCD217
MOCD217
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD211/D
MOCD211
MOCD211
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MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
MOC3001
MOC3000
scr optoisolator
mr5060
SCR GATE DRIVER
IEC204AXK
VDE0113
VDE0160
VDE0832
VDE0833
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MOC119
Abstract: VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA H S E M IC O N D U C TO R TECHNICAL DATA M O C 119 6 -P in D IP O p to is o la to r Darlington Output T h is device c o n s is ts of a galliu m arse n id e infrared em itting d iod e optica lly c o u p le d to a m on o lith ic silic on p h o to d a rlin gto n detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
MOC119
VDE0160
VDE0832
VDE0833
IEC-204
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Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-02
Y14SM
VDE0883
MOC8030
MOC8050
VDE0160
VDE0832
VDE0833
IEC204
IEC-204
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect
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Semi260
TY510
TY6004
TY6008
TY6010
TY8008
TY8010
2N6394
MCR218-8
UJT-2N2646 PIN DIAGRAM DETAILS
speed control of dc motor using ujt scr
c107m TRANSISTOR equivalent
UJT pin diagram 2N2646
1000w inverter PURE SINE WAVE schematic diagram
TY6008
triac ot 239
class d 1000w amplifier
inverter welder 4 schematic
thyristor zo 402
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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MOC256
Abstract: MOC256M
Text: MOTOROLA O rder this docum ent by M OC256/D SEMICONDUCTOR TECHNICAL DATA AC Input Phototransistor Sm all O utline Surface Mount Optocoupler M OC256 M otorola Preferred Device The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN
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OC256/D
MOC256
E54915
RS481S
MOC256M
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MOC205
Abstract: OC206
Text: MOTOROLA Order this document by MOC2Q5/D SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR = 4 0 - 8 0 % ] Transistor Output [CTR = 6 3 -1 2 5 % ] These devices consist of a gallium arsenide infrared emitting diode optically
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RS481A
MOC205
OC206
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motorola h11l1
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA 6-P in D IP O p to is o la to rs Logic Output . . . g a lliu m arsen id e IRED o p tic a lly c o u p le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lica tio n s re q u irin g e le c tric a l is o la tio n , fast
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H11L1
motorola h11l1
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VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
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RS481A
CD207
MOCD208
VQE 22 led
transistor sec 623
transistor sec 621
MOCD208
transistor D207
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C8050
Abstract: C3050
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.
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E54915
30A-02
C8050
C3050
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aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113
30A-02
730D-02
aiou
H11AV2
H11AV3
H11AV1A
H11AV2A
H11AV3A
ge h11a
transistor BC 176
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
30A-02
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
E0110b
30A-02
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PDF
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VDE-0883
Abstract: No abstract text available
Text: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
VDE-0883
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PDF
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D217 OPTO
Abstract: MOCD217 opto D217
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline O ptoisolators MOCD217 Transistor Output Low Input Current [CTR* 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
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MOCD217
RS481A
MOCD217
TA-25
D217 OPTO
opto D217
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Untitled
Abstract: No abstract text available
Text: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica
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H11B1
H11B2
H11B3
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
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PDF
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