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    E6727 Price and Stock

    Infineon Technologies AG BCR-116S-E6727

    TRANS 2NPN PREBIAS 0.25W SOT363
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    DigiKey BCR-116S-E6727 Reel
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    Infineon Technologies AG BCR-141S-E6727

    TRANS 2NPN PREBIAS 0.25W SOT363
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    Rochester Electronics LLC BC846UE6727HTSA1

    TRANS 2NPN 65V 100MA PG-SC74-6
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    DigiKey BC846UE6727HTSA1 Bulk 5,392
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    Infineon Technologies AG BC846UE6727HTSA1

    TRANS 2NPN 65V 100MA PG-SC74-6
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    DigiKey BC846UE6727HTSA1 Reel
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    Rochester Electronics BC846UE6727HTSA1 622,496 1
    • 1 $0.0535
    • 10 $0.0535
    • 100 $0.0503
    • 1000 $0.0455
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    Infineon Technologies AG BAS16UE6727HTSA1

    DIODE ARRAY GP 80V 100MA SC74-6
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    DigiKey BAS16UE6727HTSA1 Reel
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    Rochester Electronics BAS16UE6727HTSA1 438,000 1
    • 1 $0.0556
    • 10 $0.0556
    • 100 $0.0523
    • 1000 $0.0473
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    E6727 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ESD5V0S5US-E6727

    Abstract: No abstract text available
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727 E6727* ESD5V0S5US-E6727 PDF

    wgs SOT-23

    Abstract: transistor marking code wgs
    Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2 =47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see


    Original     		BCR116. BCR116S: BCR116/F BCR116W BCR116S EHA07184 EHA07174 BCR116 BCR116F wgs SOT-23 transistor marking code wgs PDF

    sot363 marking DATE code

    Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727 sot363 marking DATE code BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US PDF

    SOt323 marking code 6X

    Abstract: No abstract text available
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package • BCR141S / U: For orientation in reel see


    Original     		BCR141. BCR141S BCR141F/W BCR141S/U EHA07184 EHA07174 BCR141F BCR141U SOt323 marking code 6X PDF

    Untitled

    Abstract: No abstract text available
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727* OT363 PDF