MIMMD100E180X
Abstract: E72873
Text: MIMMD100E180X 1800V 100A Rectifier Module RoHS Compliant Features • Package with screw terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E72873 Applications · Supplies for DC power equipment
|
Original
|
MIMMD100E180X
E72873
50/60Hz
MIMMD100E180X
|
PDF
|
E72873
Abstract: 30-10B
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
|
Original
|
OT-227
E72873
30-10B
31-10B
E72873
30-10B
|
PDF
|
SOT-227 heatsink
Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90
|
Original
|
75N60C
OT-227
E72873
SOT-227 heatsink
75n60
SOT-227 Package
335AB
E72873
"SOT-227 B" dimensions
|
PDF
|
6110B
Abstract: IXYS DSEI 2X E72873
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
|
Original
|
OT-227
E72873
61-10B
6110B
IXYS DSEI 2X
E72873
|
PDF
|
E72873
Abstract: MUBW IXYS IGBT MUBW
Text: MUBW 50-17 T8 Converter - Brake - Inverter Module CBI3 with Trench IGBT technology 21 D11 D13 22 D15 D7 NTC 8 7 2 1 9 D12 T1 16 D1 D16 D3 17 15 T7 T2 11 14 D2 T5 20 D5 19 5 6 3 D14 T3 18 T4 D4 12 4 T6 D6 13 E72873 10 23 Three Phase Rectifier 24 Brake Chopper
|
Original
|
E72873
20090826a
E72873
MUBW
IXYS IGBT MUBW
|
PDF
|
85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
|
Original
|
85N60C
O-264
E72873
ID100
20100315c
85N60C
UPS SIEMENS
E72873
ID100
|
PDF
|
E72873
Abstract: MWI450-12E9
Text: MWI 450-12 E9 IGBT Modules Sixpack IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 3 E72873 See outline drawing for pin arrangement 5 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 125°C
|
Original
|
E72873
MWI450-12E9
20100401a
E72873
MWI450-12E9
|
PDF
|
E72873
Abstract: No abstract text available
Text: MDO 600-16N1 High Power Diode Modules VRSM V 1700 VRRM V 1600 IFRMS = IFAVM = VRRM = 3 Type 955 A 608 A 1600 V 3 2 2 MDO 600-16N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 85°C; 180° sine IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 955 608 A
|
Original
|
600-16N1
E72873
20100203a
E72873
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI 75-12 T8T IC25 = 110 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 3 4 9 24, 25, 26 6 21, 22, 23 10 NTC 11 7 8 E72873 See outline drawing for pin arrangement 12
|
Original
|
E72873
20070912a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXA37IF1200HJ Advanced Technical Information XPT IGBT IC25 = 57 A VCES = 1200 V VCE sat typ = 1.8 V C ISOPLUS247 E72873 G G C E E Backside isolated Features / Advantages Applications • Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
Original
|
IXA37IF1200HJ
ISOPLUS247â
E72873
20081119b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI 100-12 T8T IC25 = 145 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 3 4 9 24, 25, 26 6 21, 22, 23 10 NTC 11 7 8 E72873 See outline drawing for pin arrangement
|
Original
|
E72873
20070912a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI 150-12 T8T IC25 = 215 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 30,31,32 16,17,18 19 1 2 5 27, 28, 29 3 4 9 24, 25, 26 6 21, 22, 23 10 NTC 11 7 8 E72873 See outline drawing for pin arrangement
|
Original
|
E72873
20070912a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
|
Original
|
20PG1200DHGLB
E72873
20110616a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IX36MB Three Phase Rectifier Bridge VRSM V 900 VRRM V 800 IdAV = 35 A VRRM = 800 V + Type IX36MB080 ~ ~ - Symbol Conditions IdAV IdAVM TC = 85°C, module TC = 62°C, module IFSM TVJ = 45°C; VR = 0 I2t E72873 Maximum Ratings 25 30 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
|
Original
|
IX36MB
IX36MB080
E72873
20130731a
|
PDF
|
|
|
MIEB100W1200TEH
Abstract: airconditioning inverter circuit 29-D2
Text: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2
|
Original
|
MIEB100W1200TEH
E72873
20101111d
MIEB100W1200TEH
airconditioning inverter circuit
29-D2
|
PDF
|
MIXA10W1200TML
Abstract: No abstract text available
Text: MIXA10W1200TML Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Part name (Marking on product) MIXA10W1200TML 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines. 7 6 4 2 5 3 1 9, 24 Features: Application:
|
Original
|
MIXA10W1200TML
E72873
20110223b
MIXA10W1200TML
|
PDF
|
MIXA151W1200EH
Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Text: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
|
Original
|
151W1200EH
MIXA151W1200EH
E72873
20110719a
MIXA151W1200EH
D6 TRANSISTOR MARKING
IC marking code D3
D434
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 5 1 19 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin coniguration see outlines. D2 20
|
Original
|
MIEB100W1200TEH
E72873
20101111d
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUBW 50-06 A8 Converter - Brake - Inverter Module CBI3 22 21 D11 D13 D7 D15 7 1 2 3 D12 D14 D16 T7 14 23 T1 16 15 T2 11 10 D1 6 T3 18 17 D5 20 19 5 T4 D2 T5 D3 T6 D4 12 4 D6 E72873 See outline drawing for pin arrangement 13 24 8 NTC 9 Three Phase Rectifier
|
Original
|
E72873
20070921a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-04C DSEI 2x 61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
|
Original
|
OT-227
E72873
61-04C
61-06C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
|
Original
|
40N60C
ISOPLUS220TM
E72873
20080523a
|
PDF
|
E72873
Abstract: MJ 52 Diode
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 E72873 See outline drawing for pin arrangement Features t IGBTs Maximum Ratings VCES TVJ = 25°C to 150°C
|
Original
|
E72873
E72873
MJ 52 Diode
|
PDF
|
E72873
Abstract: MWI300-12E9
Text: MWI 300-12 E9 IGBT Modules Sixpack IC80 = 375 A VCES = 1200 V VCE sat typ. = 2.0 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES
|
Original
|
E72873
MWI300-12E9
20100401b
E72873
MWI300-12E9
|
PDF
|
E72873
Abstract: MWI75-12E8
Text: MWI 75-12 E8 MKI 75-12 E8 IC25 = 130 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 2 6 10 1 9 2 10 19 19 17 15 15 3 7 11 3 11 4 14, 20 8 12 4 14, 20 12 MWI E72873 See outline drawing for pin arrangement
|
Original
|
E72873
MWI75-12E8
20070912a
E72873
MWI75-12E8
|
PDF
|
