Untitled
Abstract: No abstract text available
Text: EA-PS 9000 3U 3.3KW - 150KW HOCHLEISTUNGS-DC-LABORNETZGERÄTE / HEAVY DUTY LABORATORY DC POWER SUPPLIES EA-PS 9080-340 3U hh Mehrphaseneingang 340.460VAC hh Hoher Wirkungsgrad bis 95,5% hh Ausgangsleistungen: 0.3,3kW, 0.5kW, 0.6,6kW, hh Multi-phase input 340.460VAC
|
Original
|
PDF
|
150KW
460VAC
V30kg
300kHz,
20MHz
20MHz
|
5KW PFC
Abstract: PFC 6kw PFC 2.5kw PFC 5kw PFC 3kw designed PFC 5kw pfc 3000w PFC 1.5kw EA-PS 9000 3000W power supply
Text: PROGAMMIERBARE LABORNETZGERÄTE / PROGRAMMABLE LABORATORY POWER SUPPLIES EA-PSI 9080-50 Programmierbare Netzgeräte Die Geräteserie EA-PSI 9000 ist eine Weiterentwicklung der Serie EA-PS 9000. Das neuartige Konzept der Leistungsstufe bietet dem Anwender sowohl
|
Original
|
PDF
|
001ms.
2000m
5KW PFC
PFC 6kw
PFC 2.5kw
PFC 5kw
PFC 3kw
designed PFC 5kw
pfc 3000w
PFC 1.5kw
EA-PS 9000
3000W power supply
|
Untitled
Abstract: No abstract text available
Text: EA-PS 9000 2U 1000W - 3000W PROGRAMMIERBARE DC-LABORNETZGERÄTE / PROGRAMMABLE LABORATORY DC POWER SUPPLIES EA-PS 9080-60 2U hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh 46 Weiteingangsbereich 90.264V, mit aktiver PFC Hoher Wirkungsgrad bis 93% Ausgangsleistungen: 0.1000W bis 0.3000W
|
Original
|
PDF
|
300kHz,
20MHz
|
EA-PS
Abstract: EA-PS 9000 15-POL 650-watt 9032-20 GROB 903-220
Text: Die neuen getakteten Labornetzgeräte Serie EA-PS 9000 q q q q q q q q q q q q q q q q Ausgangsleistung 320W, 650W, PFC bei 650Watt Ausgangsspannung 0.16V, 0.32V und 0.65V Ausgangsstrom 5 bis 40A Labor- und Systemanwendungen, Primär getaktet Ausgangsspannung kont. einstellbar, grob und fein
|
Original
|
PDF
|
650Watt
100mA
500mA
100mV
250mA
100mA
EA-PS
EA-PS 9000
15-POL
650-watt
9032-20
GROB
903-220
|
Ericsson AB PGR 20312
Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Text: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and
|
Original
|
PDF
|
SE-164
Ericsson AB PGR 20312
DFB ea
InGaAs APD, 10 Gb/s, -30 dBm
20312 pgr
optical supervisory channel
10 gb laser diode
Ea 1530 A
mini link ericsson
Ericsson Power Modules
stm-64 dfb
|
EA ELEKTRO-AUTOMATIK
Abstract: 232-C IEEE488 DE-41747 eurocard
Text: Bedienungsanleitung Operation manual IEEE 488.2 / RS232 Interface EA-PSP 5612 Art.-Nr.: 33100153 EA Elektro-Automatik, DE-41747 Viersen, Helmholtzstr. 31-33, 02162-3785-0, Fax 02162-16230 2 Inhalt / Index Deutsch Technische Daten 1. Einleitung 1.1 Grundlegendes zur Benutzung
|
Original
|
PDF
|
RS232
DE-41747
25polig
PS9000
EA ELEKTRO-AUTOMATIK
232-C
IEEE488
eurocard
|
termistor 10k
Abstract: 1522-PGT
Text: PGT 203 06 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for D-WDM applications at OC-48/STM16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. 7 1 10k TEC Features
|
Original
|
PDF
|
OC-48/STM16,
1522-PGT
termistor 10k
|
STM-16
Abstract: No abstract text available
Text: PGT 203 06 DFB/EA Laser Module 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth • –3 dBm output power
|
Original
|
PDF
|
OC-48/
STM-16,
SE-164
1522-PGT
STM-16
|
Untitled
Abstract: No abstract text available
Text: PGT 203 27 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • L-band DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth
|
Original
|
PDF
|
OC-48/STM16,
SE-164
1522-PGT
|
DFB ea
Abstract: Ea 1530 A
Text: PGT 203 06 DFB/EA Laser Module for 2.5 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator EA • Hermetic, 14 pin butterfly package • Single-mode fiber pigtail • 4 GHz typical bandwidth
|
Original
|
PDF
|
OC-48/STM-16,
SE-164
1522-PGT
DFB ea
Ea 1530 A
|
E2495
Abstract: No abstract text available
Text: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.
|
Original
|
PDF
|
1660C/CS/CP-Series
17-21/F
5964-3664E
E2495
|
2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
|
Original
|
PDF
|
2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
|
PPD29F800L
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F800L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The PPD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
|
Original
|
PDF
|
PPD29F800L
16-BIT
PPD29F800L
608bit
word/16
word/32
|
uPD29F008LGZ-B12B-LJH
Abstract: uPD29F008LGZ-B12B-LKH uPD29F008LGZ-B12T-LJH uPD29F008LGZ-B12T-LKH uPD29F008LGZ-B15B-LJH uPD29F008LGZ-B15B-LKH uPD29F008LGZ-B15T-LJH uPD29F008LGZ-B15T-LKH
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The PPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that
|
Original
|
PDF
|
PPD29F008L
PPD29F008L
608bit
uPD29F008LGZ-B12B-LJH
uPD29F008LGZ-B12B-LKH
uPD29F008LGZ-B12T-LJH
uPD29F008LGZ-B12T-LKH
uPD29F008LGZ-B15B-LJH
uPD29F008LGZ-B15B-LKH
uPD29F008LGZ-B15T-LJH
uPD29F008LGZ-B15T-LKH
|
|
|
Untitled
Abstract: No abstract text available
Text: SERIES 3188 Aluminum Electrolytic Capacitors Long-Life Com puter-Grade Aluminum Electrolytic Capacitors DESCRIPTION: Series 3 1 8 8 Long-Life Aluminum Electrolytic Capacitors are designed for those applications where a standard com puter-grade product must
|
OCR Scan
|
PDF
|
|
ilq 074
Abstract: 40312
Text: OXLEY = P \= BIPOLAR MULTI-CHIP LAMP RANGE FEATURES • 6 - chip array fo r high intensity output • bipolar d.c. or a.c. operation • w ide view ing angle • sunlight readable • rugged glass/m etal co n stru ctio n • sealed to BS 5490 IP67 • high reliability - 100%
|
OCR Scan
|
PDF
|
MIL-l-45208
ilq 074
40312
|
Thyristor ys 150 103
Abstract: SCR c781 C78JLA high power thyristor scr thyristors 5000 volt 3000 amperes Thyristor ys 130 C785 C787 m20 thermal fuse 115 THERMAL Fuse m20
Text: High Power 77 mm THYRISTORS S IL IC O N ^ v>Sr POWER C781 C782/ C785 C784/C787 < 7 1 ^ =1650 - 2500A / Vn DM, V _ =1800V - 4400V DRM ’ T R R M AMPLIFYING Q A T l The C781, C782, & C784 group of reverse blocking thyristors feature a nominal 77mm silicon junction design having an exclusive linear
|
OCR Scan
|
PDF
|
C782/C785
C784/C787
44UUV
C782of
Thyristor ys 150 103
SCR c781
C78JLA
high power thyristor scr
thyristors 5000 volt 3000 amperes
Thyristor ys 130
C785
C787
m20 thermal fuse 115
THERMAL Fuse m20
|
PCD41
Abstract: No abstract text available
Text: PART NUM BER 0 C P - P C D 4 1 1 6/ /X-TR UNCONTEOLLED DOCUMENT ELECTRO-OPTICAL CHARACTERISTICS To =25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct YT COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO
|
OCR Scan
|
PDF
|
DC500V
5x1O10
100ohm
10Ooh
PCD41
|
8531
Abstract: sf.c thomson IC 8531 8531 2 E88TS
Text: r Z Z ^ 7# S G S -T H O M S O N 5 IL iO T « ! T S G 8531 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • ■ ■ ■ ■ ■ ■ CAUER TYPE 6TH ORDER STOPBAND ATTENUATION : 32dB typ PASSBAND RIPPLE : 0.15dB (typ) CLOCK TO CUT-OFF FREQ. RATIO : 400 CLOCK FREQUENCY RANGE : 4 TO 1800kHz
|
OCR Scan
|
PDF
|
1800kHz
DIP-16
TSG8531
TSG85XX
SO-16
DIP-20
DIP-24
DIP-28
8531
sf.c thomson
IC 8531
8531 2
E88TS
|
2sb 667
Abstract: U1031 TSG8532 TSG8532XC TSG8532XJ TSG8532XP
Text: SbE 7 ^ 2 3 ? D OOB'iaEG S 6 S G S - T H O M S O N Tifi «SÒTH S-THOMSON TSG8532 M T - á H - 0 5 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER • CHEBYCHEV TYPE ■ 6TH ORDER ■ STOPBAND ATTENUATION : 60dB typ AT 0.25 x Fc ■ PASSBAND RIPPLE : 0.45dB (typ)
|
OCR Scan
|
PDF
|
TSG8532
1800kHz
TSG8532
TSG85XX
-i-U54
DIP-24
0D3cib70
DIP-28
2sb 667
U1031
TSG8532XC
TSG8532XJ
TSG8532XP
|
x-band diode
Abstract: x-band limiter x-band limiter diode NJS6939 x-band filter
Text: NJS6939 X - j B an d D io d e L im ite r G E N ER A L DESCRIPTION N J S 6 9 3 9 is a high p ow er Limiter designed specifically fo r use in X -ban d radars. Since it has a self b ia se d limiter d io d e, n o external trigger and no bias is required. FEATURES
|
OCR Scan
|
PDF
|
NJS6939
W10TH
TC-25
x-band diode
x-band limiter
x-band limiter diode
x-band filter
|
Untitled
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT ELEC TR O -O PTIC AL CHARACTERISTICS To = 25'C PARAMETER SYMBOL FORWARD VOLTAGE Vf PEAK FORWARD VOLTAGE V fm REVERSE CURRENT r TERMINAL CAPACITANCE Ct COLLECTOR DARK CURRENT CEO T CURRENT TRANSFER RATIO CRT COLLECTOR—EMITTER SATURATION VOLTAGE
|
OCR Scan
|
PDF
|
P-PCD218
|
65162
Abstract: transistor fn 1016
Text: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS
|
OCR Scan
|
PDF
|
fl45b
65162
transistor fn 1016
|
Untitled
Abstract: No abstract text available
Text: • R r M A P T 10 0 4 3 J V R ADVANCED po w er Te c h n o l o g y 1000v 22A 0.430Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
OCR Scan
|
PDF
|
1000v
OT-227
APT10043JVR
E145592
|
