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    EB6 SMD TRANSISTOR Search Results

    EB6 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    EB6 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    OCTALFALC - PEF 22558 E

    Abstract: eb6 smd transistor HEADER 2.54 smd xs61 infineon smd smd marking ce5
    Text: D at a S h ee t , R ev . 1 . 0 , J un e 2 00 5 O c t a l F ra m e r T M O c t a l E 1 / T 1 / J 1 F r a m er C o m po n e n t P E F 22 5 5 7 E , V e r s i on 1 . 1 W i r e l i n e C om m u n i c at i o n s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.


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    OCTALFALC - PEF 22558 E

    Abstract: PEF 22558 E PEF 22558 QuadFALC V1.3 QuadFALC 3.1 QuadFALC Version 3.1 smd marking mp vinetic application schematics P-LBGA-256 PEF22558
    Text: D a t a S h e e t , R e v . 2 . 0 , A p r . 2 00 5 O c t a l F A L C TM O c t a l E 1 / T 1 / J 1 F r a m er a n d L i n e In t e r fa c e C o m p o n en t f o r L o n g- a n d S h o r t - H a u l A p p l i c a t i o ns P E F 22 5 5 8 E , V e r s i on 1 . 1


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