ecc832
Abstract: 12dw7 ECC83 ecc 83 12dw7 tube ecc823 ECC 83 tube ON 823 ecc 82 ECC82
Text: ECC832 - 12DW7 ECC832 Combinated double triode for special purposes Base: NOVAL Uf If Dimension and connections: = 6,3 or 12,6 V = 300 or 150 mA Typical characteristic: system I. system II. pin 6,7,8 (pin 1,2,3) = 250 V 250 V Ua = -2 V -8,5 V Ug Ia = 1,2 mA
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ECC832
12DW7
ECC832
12dw7
ECC83
ecc 83
12dw7 tube
ecc823
ECC 83 tube
ON 823
ecc 82
ECC82
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512M 29
Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking
Text: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)
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16Bank
16Bank
512M 29
1g mcp
OneNAND mcp
"NOR Flash"
16-BANK
UtRAM Density
sram 128m
mrs marking
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PC100-222
Abstract: PC133-333 TSOP54
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
PC100
GLD09159
PC100-222
PC133-333
TSOP54
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Untitled
Abstract: No abstract text available
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
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256MSDRAM
Abstract: celestica
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
256MSDRAM
celestica
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PC133-333-520
Abstract: V830 PC100-222 PC133-333 TSOP54 72v8300gu8
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
PC100
PC133-333-520
V830
PC100-222
PC133-333
TSOP54
72v8300gu8
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PC133 registered reference design
Abstract: L-DIM-168-33
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
PC133 registered reference design
L-DIM-168-33
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PC133-333-520
Abstract: PC133-222 PC133-333 HYS 64V16300GU-7.5-C2 PC100-222 TSOP54 MO-161-BA PC133 registered reference design
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100-222,
PC133-333
PC133-222
PC133-333
PC133-333-520
PC133-222
HYS 64V16300GU-7.5-C2
PC100-222
TSOP54
MO-161-BA
PC133 registered reference design
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PC100-222
Abstract: PC133-333 TSOP54
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
PC100
GLD09159
PC100-222
PC133-333
TSOP54
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PC100-222
Abstract: PC133-222 PC133-333 TSOP54 resistor bank
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V16300/32220GU
64/72-Bit
128MByte
256MByte
168-Pin
PC100-222,
PC133-333
PC133-222
PC100-222
PC133-222
TSOP54
resistor bank
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PC133-333
Abstract: PC100-222 PC133-222 TSOP54 PC133-333-520
Text: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V16300/32220GU
64/72-Bit
168-Pin
PC100-222,
PC133-333
PC133-222
PC133-333
PC100-222
PC133-222
TSOP54
PC133-333-520
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Untitled
Abstract: No abstract text available
Text: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory
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64/72V8300/16220GU
64/72-Bit
168-Pin
PC100
PC133
PC133
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TSOP-54
Abstract: No abstract text available
Text: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
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64/72-Bit
64/72V8200GU
64/72V16220GU
PC100-compatible
V8200/16220GU-8/-10
L-DIM-168-30
GLD09159
TSOP-54
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12dw7
Abstract: ecc832 ECC83 12dw7 tube ECC82 ecc 83 ecc 82
Text: ECC832 - 12DW7 V» S tu 1 X O et ui Lk V z u900 2 E O tn 5 ui § X Ug V) O et Excellence with every decibel £Kcettence w ith e ve ry d e tib e i ECC832 Combinateci double triode for special purposes Base: noval = 6,3 or 12,6 v = 300 or 150 mA Typical characteristic:
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ECC832
12DW7
ECC832
12dw7
ECC83
12dw7 tube
ECC82
ecc 83
ecc 82
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ECC83
Abstract: ECC83 tube philips ecc83 ecc83 philips philips ecc 83 ECC 83 philips tube ecc83 tube cathodique culot inverter vfc 550 ECC 83 tube
Text: PHILIPS ECC83 DOUBLE HIGH MU TRIODE DOUBLE TRIODE à coefficient d'amplification élevé DOPPELTRIODE mit grossem Verstärkungsfaktor Heating indirect •by A.C. or D.C.; series or parallel supply Chauffage: indirect par C.A. ou C.C.; alimentation série ou parallele
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doz 112
Abstract: V2000G 235L
Text: SIEM EN S 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation
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64-Bit
HYS64V2000GU
72-Bit
HYS72V2000GU
0235bD5
V2000G
235b05
doz 112
235L
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation
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64-Bit
72-Bit
HYS64V1000GU
HYS72V1000GU
HYS64
V1000GU
fl235bOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation
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64-Bit
72-Bit
HYS64V1000GU
HYS72V1000GU
L-DIM-168-15
HYS64
V1000GU
GL006062
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72V1
Abstract: 235b05
Text: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation
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64-Bit
HYS64V1000GU
72-Bit
HYS72V1000GU
nn11u11111111111111111111h11111h111ih'
fl235bOS
72V1
235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules P relim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation
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64-Bit
72-Bit
HYS64V4000GU
HYS72V4000GU
L-DIM-168-17
HYS64
V4000G
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYS64V4000GU HYS72V4000GU 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation
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HYS64V4000GU
HYS72V4000GU
64-Bit
72-Bit
SPT02921
fl23SbG5
GD65b7b
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SIEMENS 3TB
Abstract: siemens 3tb 40 doz 112 D16J 3tb 50 siemens siemens serial
Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation
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64-Bit
HYS64V4000GU
72-Bit
HYS72V4000GU
SPT02921
B23SbD5
SIEMENS 3TB
siemens 3tb 40
doz 112
D16J
3tb 50 siemens
siemens serial
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ECL81
Abstract: ecf82 ecf 802 ey51 EM 80 ECC 85 EL-84 tube EABC 80 tube tube cathodique Rafena
Text: M it diesem Katalog wollen wir Ihnen in kurzer Form Einblick in das Produk tionsprogramm unseres Werkes geben. Sollten Sie für einzelne G e rä te besonderes Interesse haben, so schreiben Sie uns bitte; wir übersenden Ihnen gern d ie gewünschten ausführlichen
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nana30Ha
wana30H
ECL81
ecf82
ecf 802
ey51
EM 80
ECC 85
EL-84 tube
EABC 80 tube
tube cathodique
Rafena
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siemens rw 152
Abstract: No abstract text available
Text: SIEM ENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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72-Bit
721000GS-60/-70
721010GS-60/-70
721000/10GS-60/-70
L-DIM-168-2
II111
11111111111111111111111111111n
11111111ni
siemens rw 152
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