pc motherboard intel 945 block diagram ic find
Abstract: gpsp material property pir chip AD1817A MIDI/AUDIO ADS7180 MPU401 MPU-401 soundblaster programming sound card Creative sound blaster 4 channel
Text: a SoundPort * Controller AD1817A FEATURES Compatible with Microsoft PC 97 Logo Requirements Supports Applications Written for Windows® 95, Windows 3.1, Windows NT, SoundBlaster® Pro, AdLib®/OPL3® Stereo Audio 16-Bit ⌺⌬ Codec MPC Level-3 Mixer ISA Plug and Play Compatible
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AD1817A
16-Bit
16-Bit
MPU-401
100-Lead
S-100)
C3071
pc motherboard intel 945 block diagram ic find
gpsp material property
pir chip
AD1817A
MIDI/AUDIO
ADS7180
MPU401
soundblaster programming
sound card Creative sound blaster 4 channel
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ADV601
Abstract: ADV601LC ADV611 ADV612 ADV7185 CCIR-656 ADV611 CCTVPIPE BOARD
Text: a Closed Circuit TV Digital Video Codec ADV611/ADV612 Preliminary Technical Data FEATURES Programmable “Quality Box” Hardware Frame Rate Reduction 100% Bitstream Compatible with the ADV601 and ADV601LC Precise Compressed Bit Rate Control Field Independent Compression
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ADV611/ADV612
ADV601
ADV601LC
CCIR-656
32-Bit
ADV611
ADV612
ADV601.
ADV601LC
ADV7185
ADV611 CCTVPIPE BOARD
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RC3T
Abstract: RESISTANCE RC3T ech81 ech 81 Radiotechnique G264 ECH-81
Text: TRIO D E HEPTODE ECH 81 C O N V E R T IS S E U S E D E FR ÉQ U EN C E C A R A C T É R IST IQ U E S C h a u ffa g e : Indirect cathode isolée du filament , j Vf = 6,3 V A lim en tatio n du filam ent en sé rie ou en pa rallèle. ! If = 0,3 A C O N D IT IO N S N O M IN ALES D 'EM PLOI
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ECH81
Abstract: ECH81 tube ech 81 tube ECH81 ech 81 philips ef 85 EBF80 amplificateur hf philips oszillator ks philips
Text: PHILIPS ECH81 TRIODE-HEPTODE f o r v a r io u s purposes i n P.M., FM/AM, A.M. and t e l e v i s i o n r e c e i v e r s TRIODE-HEPTODE pour a p p l i c a t i o n s d i v e r s e s dans des ré c e p t e u r s F.M., F.M./A.M., A.M. e t de t é l é v i s i o n
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ECH81
300IfcT
ECH81
ECH81 tube
ech 81
tube ECH81
ech 81 philips
ef 85
EBF80
amplificateur hf
philips oszillator
ks philips
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ef 85
Abstract: EF85 ech 81 philips ECH81 ech 81 EF85 philips HG1 KO ET 81 K tube EF85 EF85 tube
Text: PHILIPS EF 85 R.F« PENTODE with variable mutual conductance for use as wide-band amplifier PENTHODE H.F. h. pente variable pour utilisation en amplificatrice & lar^e bande HF- PENTODE mit veränderlicher Steilheit zur Verwen dung als Breitbandverstärker
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EF851
7R0358&
ef 85
EF85
ech 81 philips
ECH81
ech 81
EF85 philips
HG1 KO
ET 81 K
tube EF85
EF85 tube
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working of induction potentiometer
Abstract: ECH 42 POTENTIOMETER 47KA KSS oscillator ECH42 induction heater circuit diagram ech 81 induction heating oscillator circuit ECH 81 AN Eaf42
Text: ECH 42 ECH 42 Triode-hexode frequency ch a n ge r Fig. 1 Normal and X -ray photographs of the EC H 42 approxim ately actual size . T he E C H 42 is a frequency changer which, like th e E C H 41, is designed as a triode liexode, b u t various features, including a screen fitted round the
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67S8U
working of induction potentiometer
ECH 42
POTENTIOMETER 47KA
KSS oscillator
ECH42
induction heater circuit diagram
ech 81
induction heating oscillator circuit
ECH 81 AN
Eaf42
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128K x 18, 64Kx 32/36 LVTTL, FLOW-THROUGH ZBT SRAM MICRON I TECHNOLOGY, INC. MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
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Untitled
Abstract: No abstract text available
Text: 64K X 18, 32Kx 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCBURST SRAM MT58LC64K18C5, MT58LC32K32C5, MT58LC32K36C5 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • • • • • • • • • •
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MT58LC64K18C5,
MT58LC32K32C5,
MT58LC32K36C5
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Untitled
Abstract: No abstract text available
Text: M I C R I O 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM N TECHNOLOGY, INC. MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 6ns, 7.5ns and 10ns
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MT55L128L18P1,
MT55L64L32P1,
MT55L64L36P1
55L128L18P
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 256K ’512Kx64 SGRAM SODIMMs TECHNOLOGY, INC. SYNCHRONOUS GRAPHICS RAM DIMM mt2lg25664 K h MT4LG51264<K>H FEATURES PIN ASSIGNMENT (Front View) • 144-pin, small-outline, dual in-line m em ory m odule (DIMM) • 2MB (256K x 64) and 4MB (512K x 64)
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144-pin,
144-PIN
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Untitled
Abstract: No abstract text available
Text: SYNCHRONOUS DRAM MODULE MT9LSDT872A, MT18LSDT1672A For the latest data sheet, please re fe r to th e M icron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES • 66 MHz-, PC 100- and PC 133-com p liant versions • JEDEC-standard 168-pin, dual in-line m em ory
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MT9LSDT872A,
MT18LSDT1672A
133-com
168-pin,
168-PIN
128MB)
10/99a
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I in s n N 128K x 18, 64K x 32/36 LVTTL, PIPELINED ZBT SRAM 9 O ^ M h ¿ .¿ U IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM + 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM M IC R O N I TECHNOLOGY, INC. MT55L128L18F1, MT55L64L32F1, MT55L64L36F1 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns
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MT55L128L18F1,
MT55L64L32F1,
MT55L64L36F1
55L128L18F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F;
MT55L256V18F,
MT55L128V32F,
MT55L128V36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns
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MT55L512L18F,
MT55L256L32F,
MT55L256L36F;
MT55L512V18F,
MT55L256V32F,
MT55L256V36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM MT55L512L18P, MT55L256L32P, MT55L256L36P; MT55L512V18P, MT55L256V32P, MT55L256V36P 8Mb ZB T SRAM 3.3V V dd, 3.3V o r 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 6ns, 7.5ns and 10ns
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MT55L512L18P,
MT55L256L32P,
MT55L256L36P;
MT55L512V18P,
MT55L256V32P,
MT55L256V36P
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip MCP 1 0 0 / 1 0 1 Microcontroller Supervisory Circuit with Push-Pull Output FEATURES PACKAGES • Holds m icrocontroller in reset until supply voltage reaches stable operating level • Resets m icrocontroller during power loss • Precision monitoring of 3V, 3.3V, and 5V systems
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MCP100)
MCP101)
OT-23-3
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Untitled
Abstract: No abstract text available
Text: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
55L128L18F
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EBC41
Abstract: ech42 ef 91 ECH 42 shortwave receiver "shortwave receiver" 4097 002 ech 81 EF41
Text: EF 41 EF 41 V a ria b le -m u R.F. pentode F ig. 1 N o rm al a n d X -ra y p h o to g ra p h s of th e E F 41 ap p ro x im ate ly a c tu a l size . The EF 41 is a variable-mu pentode suitable for R.F. and I.F. amplification in A.C. receivers and car-radio sets. The slope, in the absence of control,
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Untitled
Abstract: No abstract text available
Text: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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Untitled
Abstract: No abstract text available
Text: 4, 8 MEG X 72 SDRAM DIMMs MT5LSDT472A, MT5LSDT872A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm i FEATURES PIN ASSIGNMENT Front View • PC66-*, PC100- and PC133-compliant
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MT5LSDT472A,
MT5LSDT872A
PC66-*
PC100-
PC133-compliant
168-pin,
168-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I 2.5V I/O, PIPELINED, SCD SYNCBURST SRAM Q X /M f^ D I O T I M v D U i n Q T l l O I C D A I WI w n « IV I M T58LC256K18G 1, M T58LC128K32G 1, MT58LC128K36G1 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Single-Cycle Deselect
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T58LC256K18G
T58LC128K32G
MT58LC128K36G1
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Untitled
Abstract: No abstract text available
Text: A D VA N CE 16, 32 MEG X 72 SDRAM DIMMs MICRON' I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • PC133- and PCIOO-compliant
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MT9LSDT1672A,
MT18LSDT3272A
PC133-
168-pin,
128MB
256MB
168-PIN
128MB)
256MB)
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