ASTM-F-1892
Abstract: 38510R75001 ASTM-F1892 54AC14 MDS 54AC00 seu 54AC00 Fairchild 54ac14 54ACTQ574 54AC14 seu 54AC08
Text: N RADIATION OWNER’S MANUAL Logic Table of Contents Page Glossary of Logic-Specific Terms Radiation Results – Logic Summary FACT AC/ACT Advanced CMOS Logic FACT Quiet Series™ (ACQ/ACTQ) FACT FCT F100K 300 Series ECL Total Dose Degradation of the Device’s Switchpoint
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F100K
61E-05
00E-08
64E-05
51E-05
50E-03
06E-06
01E-06
ASTM-F-1892
38510R75001
ASTM-F1892
54AC14 MDS
54AC00 seu
54AC00
Fairchild 54ac14
54ACTQ574
54AC14 seu
54AC08
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ECL IC NAND
Abstract: No abstract text available
Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
MC10E104FN
PLCC-28
AND8020
AN1404
AN1405
AN1406
AN1503
ECL IC NAND
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MC100E104
Abstract: MC100E104FN MC100E104FNR2 MC10E104 MC10E104FN MC10E104FNR2 ECL IC NAND
Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
MC10E104FN
PLCC-28
MC10E104/D
MC100E104
MC100E104FN
MC100E104FNR2
MC10E104
MC10E104FN
MC10E104FNR2
ECL IC NAND
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D3A transistor
Abstract: No abstract text available
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper
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MC10E404,
MC100E404
MC10E404/100E404
AND8020
AN1404
AN1405
AN1406
AN1503
AN1504
AN1568
D3A transistor
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tag 725
Abstract: MC100E104 MC10E104 MC10E104FN ECL IC NAND
Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate Description The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
PLCC-28
MC10E104/D
tag 725
MC100E104
MC10E104
MC10E104FN
ECL IC NAND
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ECL IC NAND
Abstract: No abstract text available
Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate Description The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
MC10E104/D
ECL IC NAND
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marking CODE D2B
Abstract: MC100E104 MC100E104FN MC100E104FNR2 MC10E104 MC10E104FN MC10E104FNR2 marking D3B ECL IC NAND
Text: MC10E104, MC100E104 5VĄECL Quint 2ĆInput AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
MC10E104FN
EIA/JESD78
r14525
MC10E104/D
marking CODE D2B
MC100E104
MC100E104FN
MC100E104FNR2
MC10E104
MC10E104FN
MC10E104FNR2
marking D3B
ECL IC NAND
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MC100E104
Abstract: MC10E104 MC10E104FN transistor j 127 ECL IC NAND
Text: MC10E104, MC100E104 5V ECL Quint 2-Input AND/NAND Gate Description The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
PLCC-28
MC10E104/D
MC100E104
MC10E104
MC10E104FN
transistor j 127
ECL IC NAND
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MC100E104
Abstract: MC100E104FN MC100E104FNR2 MC10E104 MC10E104FN MC10E104FNR2 ECL IC NAND
Text: MC10E104, MC100E104 5VĄECL Quint 2ĆInput AND/NAND Gate The MC10E/100E104 is a quint 2-input AND/NAND gate. The function output F is the OR of all five AND gate outputs, while F is the NOR. The Q outputs need not be terminated if only the F outputs are to be
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MC10E104,
MC100E104
MC10E/100E104
MC10E104FN
EIA/JESD78
r14525
MC10E104/D
MC100E104
MC100E104FN
MC100E104FNR2
MC10E104
MC10E104FN
MC10E104FNR2
ECL IC NAND
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MC100E404
Abstract: MC10E404 MC10E404FN
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND Description The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design
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MC10E404,
MC100E404
MC10E404/100E404
MC10E404/D
MC100E404
MC10E404
MC10E404FN
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ECL IC NAND
Abstract: MC100E404 MC10E404 MC10E404FN
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND Description The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design
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MC10E404,
MC100E404
MC10E404/100E404
MC10E404/D
ECL IC NAND
MC100E404
MC10E404
MC10E404FN
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Untitled
Abstract: No abstract text available
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND Description The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design
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MC10E404,
MC100E404
MC10E404/100E404
MC10E404/D
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MC100E404
Abstract: MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2 ECL IC NAND
Text: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper
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MC10E404,
MC100E404
MC10E404/100E404
r14525
MC10E404/D
MC100E404
MC100E404FN
MC100E404FNR2
MC10E404
MC10E404FN
MC10E404FNR2
ECL IC NAND
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PART MARKING D0B
Abstract: No abstract text available
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND Description The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design
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MC10E404,
MC100E404
MC10E404/100E404
MC10E404/D
PART MARKING D0B
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marking CODE D2B
Abstract: MC100E404 MC100E404FN MC100E404FNR2 MC10E404 MC10E404FN MC10E404FNR2
Text: MC10E404, MC100E404 5VĄECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper
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MC10E404,
MC100E404
MC10E404/100E404
r14525
MC10E404/D
marking CODE D2B
MC100E404
MC100E404FN
MC100E404FNR2
MC10E404
MC10E404FN
MC10E404FNR2
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SG86A
Abstract: No abstract text available
Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi-function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a
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NBSG86A
16-pin,
NBSG86A
AND8020
SG86A
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F100K
Abstract: SY100S304 SY100S304FC SY100S304JC SY100S304JCTR
Text: QUINT AND/NAND GATE FEATURES SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors
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SY100S304
1050ps
F100K
24-pin
28-pin
SY100S304
SY100S304FC
F24-1
SY100S304JC
J28-1
F100K
SY100S304FC
SY100S304JC
SY100S304JCTR
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d2b 1
Abstract: SY100S304 F100K SY100S304FC SY100S304JC SY100S304JCTR
Text: QUINT AND/NAND GATE FEATURES SY100S304 FINAL DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors
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SY100S304
1050ps
F100K
24-pin
28-pin
SY100S304
0S304FC
F24-1
SY100S304JC
J28-1
d2b 1
F100K
SY100S304FC
SY100S304JC
SY100S304JCTR
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EP105
Abstract: MC100EP105 MC10EP105
Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,
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MC10EP105,
MC100EP105
MC10/100EP105
LVEL05
LVEL05
EP105
EP105
LQFP-32
MC10EP105/D
MC100EP105
MC10EP105
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LGA 1155 PIN diagram
Abstract: LGA 1155 pin out LGA 775 Socket PIN diagram 1155 lga socket pins LGA 1155 Socket PIN diagram 1155 lga socket lga 1155 lga 1155 socket socket lga 1155 pinout QFN tray qfn 4x4
Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi-function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a
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NBSG86A
NBSG86A
16-pin,
NBSG86A/D
LGA 1155 PIN diagram
LGA 1155 pin out
LGA 775 Socket PIN diagram
1155 lga socket pins
LGA 1155 Socket PIN diagram
1155 lga socket
lga 1155
lga 1155 socket
socket lga 1155 pinout
QFN tray qfn 4x4
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qfn 3x3 tray dimension
Abstract: 2D413 QFN tray 3x3 485G NBSG86A NBSG86ABA NBSG86ABAHTBG
Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi−function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high
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NBSG86A
FCBGA-16
NBSG86A/D
qfn 3x3 tray dimension
2D413
QFN tray 3x3
485G
NBSG86A
NBSG86ABA
NBSG86ABAHTBG
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485G
Abstract: NBSG86A NBSG86ABA NBSG86ABAEVB NBSG86ABAR2 NBSG86AMN NBSG86AMNR2 SG86A
Text: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi−function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a
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NBSG86A
NBSG86A
16-pin,
NBSG86A/D
485G
NBSG86ABA
NBSG86ABAEVB
NBSG86ABAR2
NBSG86AMN
NBSG86AMNR2
SG86A
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full adder circuit using nor gates
Abstract: M780 ecl eor
Text: January 1990 Edition 1.0 ^ = = ^ = = ^ ^ = = = = = = DATA SHEET FUJITSU E30000VH ECL Gate Array FEATURES • High Performance Logic - 80 ps/gate typical at 2.95 mW1 -135 ps/gate typical at 1.11 mW1 • 38948 Maximum Equivalent Gates2 • High I/O Count - 300 I/O available
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OCR Scan
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E30000VH
441-pin
E-30000VH
LD10L
LD10H
full adder circuit using nor gates
M780
ecl eor
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ECL IC NAND
Abstract: No abstract text available
Text: & QUINT 2-INPUT AND/NANDGATE SYNERGY SEMICONDUCTOR SyX 00E104 IviniPind OY lU I t IU 4 DESCRIPTIO N FEATURES 600 ps Max. Propagation Delay. True and Complementary outputs. ESD protection of 2000V. The SY10E/100E/101E104 is a quint 2-input AND/NAND gate designed for use in new, high performance ECL systems. The
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OCR Scan
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SyX00E104
SY10E/100E/101E104
SY100E104:
SY101E104:
SY100/101E104
ECL IC NAND
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