Untitled
Abstract: No abstract text available
Text: ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer
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ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
ISL9V3040S3
300mJ,
ISL9V3040D3S,
ISL9V3040S3S,
ISL9V3040P3,
ISL9V3040S3
O-252)
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ISL9V5036P3
Abstract: No abstract text available
Text: ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
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ISL9V5036S3S
ISL9V5036P3
ISL9V5036S3
500mJ,
ISL9V5036S3S,
ISL9V5036P3,
ISL9V5036S3
O-263)
O-220
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V5036S
Abstract: automotive ignition coil on plug smart ignition igbt ISL9V5036P3 ISL9V5036S3 ISL9V5036S3S marking sm
Text: ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
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ISL9V5036S3S
ISL9V5036P3
ISL9V5036S3
500mJ,
ISL9V5036S3S,
ISL9V5036P3,
ISL9V5036S3
O-263)
O-220
V5036S
automotive ignition coil on plug
smart ignition igbt
marking sm
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Untitled
Abstract: No abstract text available
Text: ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer
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ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
ISL9V3040S3
300mJ,
ISL9V3040D3S,
ISL9V3040S3S,
ISL9V3040P3,
ISL9V3040S3
O-252)
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v3040s
Abstract: V3040P V3040 V3040D ISL9V3040D3S ISL9V3040P3 ISL9V3040S3 ISL9V3040S3S tl2009 ISL9V3040S3ST
Text: ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer
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ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
ISL9V3040S3
300mJ,
ISL9V3040D3S,
ISL9V3040S3S,
ISL9V3040P3,
ISL9V3040S3
O-252)
v3040s
V3040P
V3040
V3040D
tl2009
ISL9V3040S3ST
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ecospark 105
Abstract: IGBT DRIVER ignition coil automotive ISL9V5036P3 isl9v5036p3_f085 ISL9V5036 igbt ignition V5036P smart ignition igbt
Text: ISL9V5036P3_F085 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit,
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ISL9V5036P3
500mJ,
O-220
500mJ
ecospark 105
IGBT DRIVER ignition coil automotive
isl9v5036p3_f085
ISL9V5036
igbt ignition
V5036P
smart ignition igbt
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Untitled
Abstract: No abstract text available
Text: ISL9V5036P3_F085 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit,
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ISL9V5036P3
500mJ,
O-220
500mJ
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IGBT DRIVER ignition coil automotive
Abstract: ISL9V5045S3 ISL9V5045S3S ISL9V5045S3ST
Text: ISL9V5045S3ST EcoSPARK N-Channel Ignition IGBT 500mJ, 450V Features General Description SCIS Energy = 500mJ at TJ = 25oC The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak TO-263 plastic package. This device
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ISL9V5045S3ST
500mJ,
500mJ
ISL9V5045S3ST
O-263)
IGBT DRIVER ignition coil automotive
ISL9V5045S3
ISL9V5045S3S
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Untitled
Abstract: No abstract text available
Text: ISL9V5045S3ST EcoSPARK N-Channel Ignition IGBT 500mJ, 450V Features General Description o ̈ SCIS Energy = 500mJ at TJ = 25 C The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak TO-263 plastic package. This device
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ISL9V5045S3ST
500mJ,
500mJ
ISL9V5045S3ST
O-263)
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Untitled
Abstract: No abstract text available
Text: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the
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ISL9V2040D3S
ISL9V2040S3S
ISL9V2040P3
200mJ,
ISL9V2040D3S,
ISL9V2040S3S,
ISL9V2040P3
O-252)
O-263)
O-220
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IGBT DRIVER ignition coil automotive
Abstract: No abstract text available
Text: ISL9V5045S3ST_F085 EcoSPARK N-Channel Ignition IGBT 500mJ, 450V Features General Description SCIS Energy = 500mJ at TJ = 25oC The ISL9V5045S3ST_F085 is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak TO-263 plastic package. This device
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ISL9V5045S3ST
500mJ,
500mJ
O-263)
IGBT DRIVER ignition coil automotive
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Untitled
Abstract: No abstract text available
Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended
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ISL9V2540S3ST
250mJ,
250mJ
ISL9V2540S3ST
O-263)
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V2540S
Abstract: IGBT DRIVER ignition coil automotive 5482E automotive ignition coil ISL9V2540S3S ISL9V2540S3ST igbt spice ignition spice smart ignition igbt
Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended
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ISL9V2540S3ST
250mJ,
250mJ
ISL9V2540S3ST
O-263)
V2540S
IGBT DRIVER ignition coil automotive
5482E
automotive ignition coil
ISL9V2540S3S
igbt spice
ignition spice
smart ignition igbt
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Untitled
Abstract: No abstract text available
Text: ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARK 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are
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ISL9V3036D3S
ISL9V3036S3S
ISL9V3036P3
300mJ,
ISL9V3036D3S,
ISL9V3036S3S,
ISL9V3036P3
O-252)
O-263)
O-220
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of capacitor 33uf 35v
Abstract: capacitor 100uF/16V Fairchild 902 1N4937 220uf 16v capacitor capacitor 104 U capacitor 100nF 104 Diode 1n4937
Text: May, 2002 Application Note 9022 TIP-SPM Test Board I SPM TEST BOARD for use in air-conditioners Direct Interface with CPU 2002 Fairchild Semiconductor Corporation 1 Rev. A1, May 2002 ©2002 Fairchild Semiconductor Corporation 2 C23 102 C22 105 C12 471
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100uF
220uF
of capacitor 33uf 35v
capacitor 100uF/16V
Fairchild 902
1N4937
220uf 16v capacitor
capacitor 104 U
capacitor 100nF 104
Diode 1n4937
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voltage devide bias
Abstract: 4.7k resistor 100nf 100 capacitor 104 capacitor capacitor 100uF/16V capacitor 220uf/35v carbon resistor Fairchild 902 1N4937 carbon film resistor
Text: May, 2002 Application Note 9025 TIP-SPM Test Board IV SPM TEST BOARD for use in washing-machines Direct Interface with CPU 2002 Fairchild Semiconductor Corporation 1 Rev. A1, May 2002 ©2002 Fairchild Semiconductor Corporation 2 C22 105 C23 102 5V line
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100uF
220uF
voltage devide bias
4.7k resistor
100nf 100 capacitor
104 capacitor
capacitor 100uF/16V
capacitor 220uf/35v
carbon resistor
Fairchild 902
1N4937
carbon film resistor
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100nf 100 capacitor
Abstract: 1N4937 carbon film resistor
Text: May, 2003 Application Note 9026 TIP-Smart Power Module Test Board I SPM TEST BOARD for use in Direct Interface with CPU 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 ©2003 Fairchild Semiconductor Corporation 2 C23 102 C22 105 C12 471 C11
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220uF
100nf 100 capacitor
1N4937
carbon film resistor
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60V 60A TO-252 N-CHANNEL
Abstract: 60V 60A TO-252 FDB2552 FDP3652 FDB2532 SAS 251 HUFA75623P3 TO-251 fairchild 30K OHM FDP3632
Text: www.fairchildsemi.com Americas Customer Response Center Fairchild Semiconductor 222 West Las Colinas Boulevard Suite 380 Irving, TX 75039 Tel: 888-522-5372 Fax: 972-910-8036 China Fairchild Semiconductor Hong Kong Ltd. Shenzhen Representative Office Room 3107, Shun Hing Square
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FIN-00930
HUFA75637P3,
HUFA75637S3S
O-220/TO-263
HUFA75631P3,
HUFA75631S3S
O-251/TO-252
FDD3682,
FDP3682,
FDB3682
60V 60A TO-252 N-CHANNEL
60V 60A TO-252
FDB2552
FDP3652
FDB2532
SAS 251
HUFA75623P3
TO-251 fairchild
30K OHM
FDP3632
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FDMA1025P
Abstract: marking 31A
Text: FDMA1025P Dual P-Channel PowerTrench MOSFET –20V, –3.1A, 105mΩ Features tm General Description Max rDS on = 155mΩ at VGS = –4.5V, ID = –3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel
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FDMA1025P
FDMA1025P
marking 31A
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Untitled
Abstract: No abstract text available
Text: FDS9958 tm Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description ̈ Max rDS on =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench®
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FDS9958
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FDS9958
Abstract: No abstract text available
Text: FDS9958 tm Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS on =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench®
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FDS9958
FDS9958
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N mosfet 100v 200A
Abstract: 100V N-channel mosfet FQH90N10V2
Text: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)
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FQH90N10V2
FQH90N10V2
N mosfet 100v 200A
100V N-channel mosfet
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N mosfet 100v 200A
Abstract: FQA90N10V2 100V N-Channel MOSFET
Text: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)
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FQA90N10V2
FQA90N10V2
N mosfet 100v 200A
100V N-Channel MOSFET
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FDS9958
Abstract: No abstract text available
Text: FDS9958_F085 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS on =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench®
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FDS9958
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