Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION S O N E T/S D H /A TM C LO C K R ECOVERY UNIT FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop filter for clock ecovery
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S3027
OC-12/STM-4
350mW
S3027
speed0-700
500mV
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l KVHCR Series S e m ic o n d u c to r , I n c . 2.25-2.50 Amp Fast ecovery, High Voltage Rectifier Assemblies 3/8 Max FEATURES: • R ated C urren t Up To 0 .9 0 Am ps 1.0 EL ■ P R V 5 ,0 0 0 To 5 0 ,0 0 0 Volts 1/4 ■ Fast R ecovery Version
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SD345
Abstract: dual diode to3 common anode USD345CHR IJSD335CHR2 USD300C USD300CHR2 USD320C USD335C USD335CHR2 USD345C
Text: DUAL POWER SCHOTTKY RECTIFIERS [Jgggg 60A Pk, 45V USD335CHR2 USD345CHR2 FEATURES • Very Low Forw ard Voltage • Low R ecovered C h arg e • Rugged P ackag e Design TO-3 • H ig h E ffic ie n c y fo r Low Voltage S u p p lie s • 4 5 V B lo c k in g @ Rated T|rt,a*
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USD335CHR2
USD345CHR2
USD320C
USD335C
USD345C
USD300C
USD335CHR2
IJSD335CHR2,
345CHR2.
SD345
dual diode to3 common anode
USD345CHR
IJSD335CHR2
USD300CHR2
USD345C
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Untitled
Abstract: No abstract text available
Text: ] S I A t h r u SIIVI S u r f a c e M o u n t S t a n d a r d R ecovery G lass P assiv ate d REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AM PERE Features: *For Surface M ount Application “Glass Passivated Chip •Low Reverse Leakage Current “ Low Forward Voltage Drop And High C urrent Capability
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DO-214AC)
W6TH00)
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Untitled
Abstract: No abstract text available
Text: WFlüL£TÎ-pA<:l<AR1>/ CMPNTS blE • 44475Û4 GOO^SS W hpl HEWLETT 1 :7 1 1 PACKARD 7b2 Glass Packaged Step R ecovery Diodes soiioìsf 3/14 Technical Data 5082-0153 5082-0180 5082-0833 5082-0840 Features • Optimized for Both Low and High Order Multiplier
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1722B
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HS10
Abstract: HVE20 HVE75 HS10-100 1N3643 HS15 HVE10 HVE40
Text: HIGH VOLTAGE SILICON RECTIFIERS HS10-100 HVE10-30 1N3643-47 HVE40-100 (1N5181-84) 100-250 m A S tan da rd R ecovery, M in a tu re FEATURES DESCRIPTION • • • • • The H VE/H S silico n re c tifie r series com bine a m edium average re ctifie d current
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HVE10-30
1N3643-47)
HVE40-100
IN5181-84)
HVE/HVE10-30/1N3643-47
HVE/HVE40-100
/1N5181-84)
HS10
HVE20
HVE75
HS10-100
1N3643
HS15
HVE10
HVE40
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Untitled
Abstract: No abstract text available
Text: SE M IC O N D U C TO R BAW56 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE U LTRA HIGH SPEED SW ITC H IN G APPLICATION. FEA TU RES L • Sm all Package : SO T-23. B L DIM • L ow Forw ard V oltag : V F= 0.92V T yp. . _ • Fast R everse R ecovery T im e : t^ L ó n sC T y p .).
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BAW56
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MARKING 5C0
Abstract: No abstract text available
Text: T L C O M P A T IB L E * ECOVERY GENERATOR # T2L in p u t and o u tp u t # Pulse w id th s stable and precise # High o u tp u t d uty cycles # 8-pin Space Saver package fo r at least 10ns to o b ta in the d e sire d o u tp u t pulse. The d uration of the p o sitive in p u t pulse, a fte r th is tim e, has no
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500ns
MARKING 5C0
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Untitled
Abstract: No abstract text available
Text: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT ECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e
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o322-3331,
D-6380
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F310
Abstract: F320 UF310 UF315 UF320
Text: Ultra Fast R ecovery R e ctifie rs UF310 UF320 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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D0201
UF310
UF315
UF320
F310
F320
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F530
Abstract: UF530 UF540 UF550
Text: Ultra Fast R ecovery R e ctifie rs UF530 - UF550 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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D0201
UF530
UF540
UF550
F530
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Untitled
Abstract: No abstract text available
Text: RGP30A TSC S THRU RGP30M 3.0 AM P. G lass P assivated Junction Fast R ecovery R ectifiers . J B S I Voltage Range 50 to 1000 Volts Current 3.0 Ampere .-. DO-2Í31 AD Features <>- ❖ 4<• <■ ■0- ❖ High tem perature m e ta llu rg ica l^ bonded constructed
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RGP30A
RGP30M
MIL-S19500
50mVp-p
003554b
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Untitled
Abstract: No abstract text available
Text: S i 5 0 1 8 SI LI CON LABORATORI ES SiPHY OC-48/STIVM6 C lock and Data R ecovery IC W ith FEC Features Complete high speed, low power, CDR solution includes the following: • Supports OC-48 /STM-16 & FEC ■ Low Power— 270 mW TYP OC-48 ■ Small Footprint: 4 mm x 4 mm
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OC-48/STIVM6
OC-48
/STM-16
OC-48)
004UI
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SO NET/SDH C LO C K R ECOVERY AND SYNTHESIS UNIT FEATURES • Complies with ANSI, Bellcore, and CCITT specifications for jitter tolerance • On-chip high frequency PLL with internal loop filter for clock generation or clock ecovery • Supports clock generation for STS-3/STM-1
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S3014
STS-12/STM-4
S3014
100C1
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FR20x
Abstract: FR201 FR207
Text: E FR201 - FR207 T A IW A N SEMICONDUCTOR 2.0 AMPS. Fast R ecovery R ectifiers RoHS COMPLIANCE DO-15 -53.I K 1.5 l ì : A hin ¡¿.s’• Features ❖ <r -$• ❖ <? MH. IJM - | High e ffic ie n c y , L o w V F High c u rre n t c a p a b ility High re lia b ility
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FR201
FR207
DO-15
MIL-STD-202.
25ambient
FR20X
FR20x
FR207
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HRP-10
Abstract: HRP-20 KVA05 KVA08 KVA40 KVA50 KVHC05 VRP-10 VRP-20 VRP-30
Text: HIGH VO LTAG E RECTIFIER ASSEM B LIE S , S ta n d a rd R ecovery H u m b e r: A v e ra g -e R e c t if ie d C u r r e it at T„ = 5 Q aC •' o: KVA05 KVA06 KVA 07 ' . Peak R e v e rs e V o lta -g e M ax F o rw a rd V o lt a g li <3> R a te d 1 a n d T ,» 2 S C
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KVA05
KVA08
KVA40
KVA50
KVHC06
KVHC08
KVHC09
KVHC15
KVHC20
KVHC25
HRP-10
HRP-20
KVA05
KVA08
KVA40
KVA50
KVHC05
VRP-10
VRP-20
VRP-30
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d1610
Abstract: transistor d1610 RUR-D1610 RUR-D1615 RUR-D1620 fly wheel ta9226 RURD1615 RCA Solid State power devices
Text: G E SOLID □1 STATE 3875081 G E SOLID STATE Ullra-Fasl-R ecovery Rectifiers »F|3fl7SDai D O I T L , ^ 3 “ oTe 17649 D T 0 3 ~ /7 _ 1 RUR-D1610, RUR-D1615, RUR-D1620 File Number 1383 Dual 16-A, High-Speed, High Efficiency
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GD17bM1
RUR-D1610,
RUR-D1615,
RUR-D1620
RUR-D1615
RUR-D1620Â
d1610
transistor d1610
RUR-D1610
fly wheel
ta9226
RURD1615
RCA Solid State power devices
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nfr 25m
Abstract: PC100F2 diode 931 p 7 BB351 ITT DIODE 210
Text: FAST ECOVERY DIODE MODULE 100A/200V/trr:90nsec PC100F2 FEATURES O Iso la te d B ase o D ual D iodes - C athode Com m on :PC100F2 20 0791 & O S uper F a st R ecovery o H igh S urge C apability -4 4 (1 7 3 . i . ,0';95 |. 8 2(323» -« 1 41.5(1.63)
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00A/200V/trr
90nsec
PC100F2
PC100F2
PC100F
bbl5123
nfr 25m
diode 931 p 7
BB351
ITT DIODE 210
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI FAST ECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: M itsubishi S uper Fast R ecovery Diodes are designed fo r use in applications requiring fa st sw itching. Features: □ N on-lsolated Package □ Planar C hips
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RM25HG-24S
300ns
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Untitled
Abstract: No abstract text available
Text: 2SK1947 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • • • • • L ow on-resistarice H igh speed sw itching L ow D rive Current Built-In Fast R ecovery D iode trr = 140 ns Suitable for Sw itching regulator. M otor Control
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2SK1947
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: U n y n - n z ÿ ' f * - K U tip e Super P ast R ecovery Diode t - k Axial Diode mB-ïffèm S2L20U OUTLINE DIMENSIONS Case: 1.0^ 1 i 4.4 ' 200V 1.5A ¥ YK U < j) ° - •trr3 5 n s T ) : CalhiHlc (2 ) : Anodo t tfc N J W O •¿■tsmmmMw M arking •S R S S
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S2L20U
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: m RHRU5070, RHRU5080, RHRU5090 RHRU50100 Ha r r is «ö — 50A, 700V - 1000V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft R ecovery.<75ns JEDEC STYLE TO-218 • Operating T em p eratu
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RHRU5070,
RHRU5080,
RHRU5090
RHRU50100
O-218
TA49066)
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Untitled
Abstract: No abstract text available
Text: SILICON F A S T R ECOVERY R EC TIFYIN G DIODES • 2 0 0 ~ 1600V S M - 1X H • 1. 0 A - 0 . 2 A • t r r ^ 0 . 4 ju s 2 . H S M S iE T \ • • FEATURES 1. Compact body. Minimum i mounting pitch 5mm, height 2.4mn 2. Fast ecovery soft ecovery type. ' — $ " y \
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OB16IN
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RHR75120
Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Text: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2
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RHR1Y75120CC
RHR1Y75120CC
O-264AA
430EB71
Q0ti37fll
RHR75120
RHR75120C
TO-264-aa
TA49042
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