53C90A
Abstract: 7252s ncr53c90 NCR53C90A parallel port 7252 motorola AN-71 IDT72520 R3000 EA02-EA05
Text: SIMPLIFY SCSI HOST ADAPTER DESIGN WITH BIDIRECTIONAL FIFO MEMORIES APPLICATION NOTE AN-71 Integrated Device Technology, Inc. by Julie S. Lin ABSTRACT With the dramatic change of the processing power in the microprocessor world, the bottleneck of the system performance is shifted to the I/O subsystem. An efficient I/O interface
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AN-71
7252s;
53C90A;
53C90A
7252s
ncr53c90
NCR53C90A
parallel port
7252 motorola
AN-71
IDT72520
R3000
EA02-EA05
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atmel 702
Abstract: 2-767004-2 ed28 AT29 C6201 TMS320C6201 XDS510 XDS510PP XDS510WS Diodes ed26
Text: TMS320C6201 Test and Evaluation Board Technical Reference Literature Number: SPRU235A December 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest
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TMS320C6201
SPRU235A
XDS510
XDS510WS
atmel 702
2-767004-2
ed28
AT29
C6201
TMS320C6201
XDS510PP
Diodes ed26
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diode u1G
Abstract: fuse n15 2-767004-2 at29lv256 application note ed28 ed28 diode PFO Solaris thermal fuse M10 AT29 C6201
Text: TMS320C6201 Test and Evaluation Board Technical Reference Literature Number: SPRU235A December 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest
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TMS320C6201
SPRU235A
XDS510
XDS510WS
diode u1G
fuse n15
2-767004-2
at29lv256 application note
ed28
ed28 diode
PFO Solaris
thermal fuse M10
AT29
C6201
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AT29
Abstract: C6201 TMS320C6201 XDS510 XDS510PP XDS510WS BEA10 031A5 TMS626812
Text: TMS320C6201 Test and Evaluation Board Technical Reference 1997 Digital Signal Processing Solutions Printed in U.S.A., December 1997 SDS SPRU235A TMS320C6201 Test and Evaluation Board Technical Reference Literature Number: SPRU235A December 1997 Printed on Recycled Paper
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TMS320C6201
SPRU235A
AT29
C6201
TMS320C6201
XDS510
XDS510PP
XDS510WS
BEA10
031A5
TMS626812
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PDF
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ACF153
Abstract: AT29 C6201 TMS320C6201 XDS510 XDS510PP XDS510WS atmel 702 AAEA2 TMS626812
Text: TMS320C6201 Test and Evaluation Board Technical Reference 1997 Digital Signal Processing Solutions Printed in U.S.A., December 1997 SDS SPRU235A TMS320C6201 Test and Evaluation Board Technical Reference Literature Number: SPRU235A December 1997 Printed on Recycled Paper
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TMS320C6201
SPRU235A
ACF153
AT29
C6201
TMS320C6201
XDS510
XDS510PP
XDS510WS
atmel 702
AAEA2
TMS626812
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PDF
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what is TMS320C6711 DSK
Abstract: DSK tms320C5402 tfm 4031 TMS320C6211 connector connector SFM140L2SDLC ea18 TMS320C6711 DSK module C6000 TMS320 TMS320C5402
Text: Application Report SPRA711 – November 2000 TMS320 Cross-Platform Daughtercard Specification Revision 1.0 Dave Bell Digital Signal Processing Solutions ABSTRACT A standard has been established for daughtercards made to function with TMS320C6000 and TMS320C5000™ systems. The daughtercard specification is based
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SPRA711
TMS320
TMS320C6000TM
TMS320C5000TM
TMS320C6201
TMS320C6201
TMS320C6701
TMS320C6211
TMS320C6711
TMS320C5402
what is TMS320C6711 DSK
DSK tms320C5402
tfm 4031
TMS320C6211 connector
connector SFM140L2SDLC
ea18
TMS320C6711 DSK module
C6000
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PDF
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Severns
Abstract: Oscillation mosfet zener diode capacitance ED31 diode POWER MOSFET APPLICATION NOTE parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
Text: Eliminating Parasitic Oscillation between Parallel MOSFETs Based in part on a paper presented at Power Electronics Technology 2003 conference titled “Issues with Paralleling MOSFETs and IGBTs” by Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology
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APT9901,
ED-31,
Severns
Oscillation mosfet
zener diode capacitance
ED31 diode
POWER MOSFET APPLICATION NOTE
parallel connection of MOSFETs
R. Severns "Controlling Oscillation in
APT9901
Zener Diode frequency
Zener Diode high frequency applications
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mosfet to ignition coil
Abstract: scr speed control dc motor thyristor drive dc motor speed control AN7332 CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer
Text: Harris Semiconductor No. AN7332.1 Harris Power MOSFETs May 1992 The Application Of Conductivity-Modulated Field-Effect Transistors Author: Jack Wojslawowicz Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer
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AN7332
ED-31
CR17-20
CR9-12
mosfet to ignition coil
scr speed control dc motor
thyristor drive dc motor speed control
CR8 thyristor equivalent
thyristor motor speed control circuit
thyristor family
scr driver dc motor speed control
mosfet structure
Ignition Transformer
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DSP56311
Abstract: DSP56300 ED15 ED17 ED20 1K92 ED42 ED44 ED38
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 1K92M General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
1K92M
lint563"
311CE1K92M
1K92dded
DSP56300
ED15
ED17
ED20
1K92
ED42
ED44
ED38
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PDF
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AN7332
Abstract: thyristor family Ignition Transformer automotive thyristor intersil ignition mosfet structure
Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement
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1K34A
Abstract: DSP56300 DSP56311 ED15 ED17 ED20 ED44 1K34
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 1K34A General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
1K34A
lint563"
311CE1K34A
1K34dded
1K34A
DSP56300
ED15
ED17
ED20
ED44
1K34
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DSP56300
Abstract: DSP56311 ED15 ED17 ED20 ED44
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 0K92M General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
0K92M
lint563"
311CE1K92M
0K92dded
DSP56300
ED15
ED17
ED20
ED44
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PDF
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ed28
Abstract: DSP56300 DSP56311 ED15 ED17 ED20 2J23D ED44
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 2J23D General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
2J23D
lint563"
311CE2J23D
ed28
DSP56300
ED15
ED17
ED20
2J23D
ED44
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PDF
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DSP56300
Abstract: DSP56311 DSP56311CE0K92M ED15 ED17 ED20 ED26 ED38
Text: Freescale Semiconductor Errata DSP56311CE0K92M Rev. 3, 11/2004 DSP56311 Device Errata for Mask 0K92M To prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available
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DSP56311CE0K92M
DSP56311
0K92M
lint563"
DSP56300
DSP56311CE0K92M
ED15
ED17
ED20
ED26
ED38
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|
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DSP56300
Abstract: DSP56311 DSP56311CE1K92M ED15 ED17 ED20 ED26
Text: Freescale Semiconductor Errata DSP56311CE1K92M Rev. 5, 11/2004 DSP56311 Device Errata for Mask 1K92M General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions.
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DSP56311CE1K92M
DSP56311
1K92M
lint563"
DSP56300
DSP56311CE1K92M
ED15
ED17
ED20
ED26
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mosfet 7503
Abstract: mosfet to ignition coil AN-7503 Ignition Transformer AN75 output characteristic of SCR GTO
Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary Cretor DOCI FO dfark Page- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement
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DSP56311
Abstract: DSP56300 ED15 ED17 ED20 ED44
Text: Freescale Semiconductor, Inc. Chip Errata DSP56311 Digital Signal Processor Mask: 0K34A Freescale Semiconductor, Inc. General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such
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DSP56311
0K34A
lint563"
311CE1K34A
DSP56300
ED15
ED17
ED20
ED44
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PDF
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1K34A
Abstract: 1K34 DSP56300 DSP56311 DSP56311CE1K34A ED15 ED17 ED20 ED26
Text: Freescale Semiconductor Errata DSP56311CE1K34A Rev. 5, 11/2004 DSP56311 Device Errata for Mask 1K34A General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions.
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DSP56311CE1K34A
DSP56311
1K34A
lint563"
1K34A
1K34
DSP56300
DSP56311CE1K34A
ED15
ED17
ED20
ED26
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PDF
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BC107BP
Abstract: TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN
Text: MEETING TRANSIENT SPECIFICATIONS FOR ELECTRICAL SYSTEMS IN MILITARY VEHICLES By Arthur Jordan Sr. Applications Engineer, Vicor Electrical systems in military vehicles are normally required to meet stringent transient requirements. Typical of these specifications are MIL-STD-1275B in the U.S.A. and DEF-STAN
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MIL-STD-1275B
MIL-STD-461E
ED-31
BC107BP
TRANSISTOR BC107BP
Rudy Severns
TRANSISTOR DATASHEET BC107BP
Severns
uA555
TRANSISTOR DATASHEET BC107B
Datasheet for BC107B BJT
"Safe Operating Area and Thermal Design" silicon
LM10CN
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PDF
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DSP56311
Abstract: DSP56300 ED15
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 1K92M General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
1K92M
lint563"
311CE1K92M
1K92spec
DSP56300
ED15
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PDF
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1K34A
Abstract: DSP56300 DSP56311 ED15
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 1K34A General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
1K34A
lint563"
311CE1K34A
1K34spec
1K34A
DSP56300
ED15
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PDF
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DSP56311
Abstract: DSP56300
Text: Chip Errata DSP56311 Digital Signal Processor Mask: 2J23D General remark: In order to prevent the use of instructions or sequences of instructions that do not operate correctly, we encourage you to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of the
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DSP56311
2J23D
lint563"
311CE2J23D
DSP56300
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PDF
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TQFP 100 PACKAGE footprint
Abstract: 6A17
Text: mx DSP SOLUTIONS ElfCIRONtC DESIGNS, N C EDI2DL32256V w o ; S W m C H D H K t » « u The EDi2DL32256VxxBC is a member of EDI's SB SR A M family designed in support of Texas Instrument's TMS320C6x DSPs. The 256Kx32 SB SR A M is a 3.3V, 8 megabit Synchronous Pipeline Burst
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OCR Scan
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200MHz
EDI2DL32256V
EDi2DL32256VxxBC
TMS320C6x
256Kx32
256Kx32
166Mhz)
200Mhz)
512Kx32
TQFP 100 PACKAGE footprint
6A17
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PDF
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gummel
Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Text: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands
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ED-31
2048/JessiT28
30GHz,
60Ghz
gummel
small signal high frequency bipolar transistor
IC sequential DATA BASE
gex 96 a
TRANSISTOR 30GHZ
transistor RBV
cbv2
Y parameters of transistors in high frequency
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