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    EDI414096 Search Results

    EDI414096 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI414096C White Microelectronics + 5V (±10%),4M x 1 dynamic RAM CMOS, monolithic Scan PDF

    EDI414096 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CERAMIC FLATPACK

    Abstract: SMD Transistor jd
    Text: May 1, 1997 Dear Customer: Texas Instruments Semiconductor Group continually monitors sales and billings activities on all the products offered to its customers. The activity for the products attached has declined to a level which warrants discontinuance of these products by the Military Products Semiconductor


    Original
    MT4C1004 EDI414096 CERAMIC FLATPACK SMD Transistor jd PDF

    Untitled

    Abstract: No abstract text available
    Text: moi _ EDI414096C Electronic Detigns me. High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide


    OCR Scan
    EDI414096C EDI414096C A0A10 PDF

    CA211

    Abstract: EDI414096C 4Mx1
    Text: _ EDI414096C ^EDI High Performance Four Megabit Monolithic DRAM Ei#ctronks Design* Inc. 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide


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    EDI414096C EDI414096C -A109- A0-A10 CA211 4Mx1 PDF

    1213C

    Abstract: 4Mx1
    Text: É3EDI EDI414096C Electronic Designs Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic DMFOMM’IO i Features The EDI414096C is a high performance, low power C M O S Dynamic RA M organized a s 4Megabits x1. The use of four-layer poly process, combined with silicide


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    EDI414096C EDI414096C A0A10 1213C 4Mx1 PDF

    4Mx1

    Abstract: CA211 EDI414096C a719 A109 amplifier
    Text: ^EDI _ 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell,


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    EDI414096C EDI414096C A109- 4Mx1 CA211 a719 A109 amplifier PDF

    EDI8M8512L

    Abstract: No abstract text available
    Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28


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    EDH816H64CX2 EDI88128PXXNM EDI88130CSXXNB 188130LPSXXNB EDI88130PSXXNB 188128CXXLB EDI88128CXXLM EDI88128LPXXLB EDI88128LPXXLM EDI88128PXXLB EDI8M8512L PDF

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


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    EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256 PDF

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


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    EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832 PDF

    EDI44256C

    Abstract: No abstract text available
    Text: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs


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    MIL-STD-883, 256Kx4 EDI44256CXXNB EDI44256CXXQB EDI44256CXXZB EDI411024CXXFB EDI411024CXXNB EDI411024CXXQB EDI44256C PDF