CERAMIC FLATPACK
Abstract: SMD Transistor jd
Text: May 1, 1997 Dear Customer: Texas Instruments Semiconductor Group continually monitors sales and billings activities on all the products offered to its customers. The activity for the products attached has declined to a level which warrants discontinuance of these products by the Military Products Semiconductor
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MT4C1004
EDI414096
CERAMIC FLATPACK
SMD Transistor jd
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Untitled
Abstract: No abstract text available
Text: moi _ EDI414096C Electronic Detigns me. High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide
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EDI414096C
EDI414096C
A0A10
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CA211
Abstract: EDI414096C 4Mx1
Text: _ EDI414096C ^EDI High Performance Four Megabit Monolithic DRAM Ei#ctronks Design* Inc. 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide
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EDI414096C
EDI414096C
-A109-
A0-A10
CA211
4Mx1
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1213C
Abstract: 4Mx1
Text: É3EDI EDI414096C Electronic Designs Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic DMFOMM’IO i Features The EDI414096C is a high performance, low power C M O S Dynamic RA M organized a s 4Megabits x1. The use of four-layer poly process, combined with silicide
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EDI414096C
EDI414096C
A0A10
1213C
4Mx1
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4Mx1
Abstract: CA211 EDI414096C a719 A109 amplifier
Text: ^EDI _ 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell,
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EDI414096C
EDI414096C
A109-
4Mx1
CA211
a719
A109 amplifier
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EDI8M8512L
Abstract: No abstract text available
Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28
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EDH816H64CX2
EDI88128PXXNM
EDI88130CSXXNB
188130LPSXXNB
EDI88130PSXXNB
188128CXXLB
EDI88128CXXLM
EDI88128LPXXLB
EDI88128LPXXLM
EDI88128PXXLB
EDI8M8512L
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64kx4 DRAM
Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static
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EDI8833C/LP/P
32Kx8
EDI8833C/LP/P
144bit
32Kx8.
MIL-STD-883,
64Kx4
EDI8466CB.
256Kx1
EDI81256C/LP/P.
64kx4 DRAM
SRAM 6T
PS-136
4Kx1 DRAM
EDI8F8512LP MILITARY
4Kx1 SRAM
5962-89598
EDI8833LP
32kx8 bit low power cmos sram
edi84256
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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EDI44256C
Abstract: No abstract text available
Text: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs
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MIL-STD-883,
256Kx4
EDI44256CXXNB
EDI44256CXXQB
EDI44256CXXZB
EDI411024CXXFB
EDI411024CXXNB
EDI411024CXXQB
EDI44256C
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