EDJ2116DASE PACKAGE Search Results

EDJ2116DASE PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

EDJ2116DASE PACKAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EDE2116ACBG Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3	Original	E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F	PDF
EDJ2116DASE Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド目次 1. DDR3	Original	J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

EDE2116ACBG

Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3

Original

E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

PDF

EDJ2116DASE

Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド目次 1. DDR3