74ABT16244
Abstract: No abstract text available
Text: November 1996 Revision 1.0 DATA SHEET EDC2BV7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282-(60/70)JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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EDC2BV7282-
16MByte
16-megabyte
168-pins,
MB81V17805A-
74ABT16244
MP-DRAMM-DS-20436-11/96
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60JG
Abstract: MB81V17805A-60PJ
Text: May 1996 Revision 1.0 DATA SHEET DM2M2V645-60JG-IS 16MByte 2M x 64 CMOS EDO DRAM Module - 3.3V General Description The DM2M2V645-60JG-IS is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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DM2M2V645-60JG-IS
16MByte
DM2M2V645-60JG-IS
16-megabyte
168-pins,
MB81V17805A-60PJ
MP-DRAMM-DS-20309-5/96
60JG
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GMM7644110
Abstract: GMM76441 431lg
Text: GMM7644110CS/SG-6/7 LG Semicon Co., Ltd. 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GMM7644110CS/SG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 pin SOJ package, two 16bit
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GMM7644110CS/SG
16bit
48pin
764411OCS/SG
76441I0C
GMM7644110CS/SG-6/7
GMM7644110
GMM76441
431lg
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mm773
Abstract: VU METER 32 led
Text: GMM7734240CS/SG-6/7 LG Semicon Co., Ltd. 4,194,304 WORDS x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M7734240CS/SG is an 4M x 72 bits EDO Dynamic RAM MODULE which is assembled 18 pieces o f 4M x 4bit EDO DRAMs in 24 pin SOJ package, two 16bit
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GMM7734240CS/SG-6/7
M7734240CS/SG
16bit
48pin
GMM7734240CS/SG
GMMi7734240CS/SG
7734240CS/SG
GMM7734240CS/SG
mm773
VU METER 32 led
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t-con lg
Abstract: LG TCON T-CON BOARD lg
Text: GMM7641210CT/TG-6/7 LG Semicon Co.,Ltd. 1,048.576 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M 7641210CT/TG is an 1M x 64 bits EDO Dynamic RAM MODULE which is assembled 4 pieces o f 1M x 16bit EDO DRAMs in 44 pin TSOP II package, one 20bit
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GMM7641210CT/TG
16bit
20bit
56pin
48pin
GMM764121
7641210CT/TG
7641210C
GMM7641210CT/TG-6/7
t-con lg
LG TCON
T-CON BOARD lg
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Untitled
Abstract: No abstract text available
Text: GMWI7644113CSG-6/7 4,194,304 WORDS x 64 BIT LG Semicon Co.,Ltd. CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7644113CSG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24/26 pin SOJ package, one 2K
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GMWI7644113CSG-6/7
7644113CSG
7644113CSG
GMM7644113CSG
Ol681
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Untitled
Abstract: No abstract text available
Text: GMM764211ÛCNS/SG-6/7 LG Semicon Co.,Ltd. 2,097,152 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GMM76421 ¡OCNS/SG is an 2M x 64 bits EDO Dynamic RAM MODULE which is assembled 8 pieces o f 2M x 8bit EDO DRAMs in 28 pin SOJ package, two 16bit
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GMM764211
GMM76421
16bit
48pin
GMM7642110CNS/SG
Waveform-13
GMM7642110CNS/SG
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Untitled
Abstract: No abstract text available
Text: GMM764421OCS/SG-6/7 LG Semicon Co.,Ltd. 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 764421OCS/SG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 pin SOJ package, two 16bit
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GMM7644210CS/SG
16bit
48pin
GMM764421
7644210CS/SG
GMM764421OCS/SG-6/7
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Untitled
Abstract: No abstract text available
Text: GMM7644143CNSG-6/7 LG Semicon Co.,Ltd. 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7644143CNSG is a 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 2M x 8bit EDO DRAMs in 28 pin SOJ package and one 2K
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GMM7644143CNSG-6/7
7644143CNSG
7644143CSNG
GMM7644143CNSG
O168I
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Untitled
Abstract: No abstract text available
Text: GMM7642113CNSG-6/7 LG Semicon Co.,Ltd. 2,097,152 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M 7642113CNSG is an 2M x 64 bits EDO Dynamic RAM M ODULE which is assembled 8 pieces o f 2M x 8bit EDO DRAM s in 28 pin SOJ package and one 2k EEPROM for SPD
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GMM7642113CN/SG
7642113CNSG
GMM7642113CNSG-6/7
7642113CNSG
GMM7642113CNSG
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Untitled
Abstract: No abstract text available
Text: GMM7734143CSG-6/7 LG Semicon Co.,Ltd. 4,194,304 W ORDS x 72BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7734143CSG is a 4M x 72 bits EDO Dynamic RAM MODULE which is assembled 18 pieces o f 4M x 4bit EDO DRAMs in 24/26 pin SOJ package, one 2K EEPROM for SPD in
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GMM7734143CSG
7734143CSG
GMM7734143CSG-6/7
72BIT
7734143CSG
GMM7734143CSG
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Untitled
Abstract: No abstract text available
Text: GM M 7644110CT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M 7644110CT/TG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 pin TSOP II package, two
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GMM7644110CT/TG
16bit
48pin
GMM76441
7644110CT/TG
7644110CT/TG
7644110CT/TG-6/7
I644110CT/TG
i0000
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LG 42 T-con board
Abstract: No abstract text available
Text: GMM7642210CT/TG-6/7 LG Semicon Co., Ltd. 2,097,152 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 764221OCT/TG is an 2M x 64 bits EDO Dynamic RAM MODULE which is assembled 8 pieces o f 1M x 16bit EDO DRAMs in 44 pin TSOP II package, one 20bit
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GMM7642210CT/TG-6/7
764221OCT/TG
16bit
20bit
56pin
48pin
76422I0CT/TG
GMM7642210CT/TG
LG 42 T-con board
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Untitled
Abstract: No abstract text available
Text: ~ LG Semicon Co., Ltd. G WM7734113CSG-6/7 4 , 1 9 4 ,3 0 4 w o r d s x 7 2 b i t CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7734113CSG is an 4M x 72 bits EDO Dynamic RAM MODULE which is assembled 18 pieces of 4M x 4bit EDO DRAMs in 24/26 pin SOJ package, one 2K
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GMM7734113CSG
7734113CSO
7734113C
WM7734113CSG-6/7
GMM7734113CSG
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Untitled
Abstract: No abstract text available
Text: 9 GMM7641010CT/TG-6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7641010C T /T G is an 1M x 64 bits EDO D ynam ic RAM M ODULE w hich is • 168 pins D ual In-L ine Package - G M M 7641010C T
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GMM7641010CT/TG-6/7
7641010C
16bit
56pin
101OCT/TG
GMM7641010CT/TG
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Untitled
Abstract: No abstract text available
Text: GMM764201GCS/SG-6/7 LG Semicon Co.,Ltd. 2,097,152 W O RD S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Features Description T h e G M M 7642010C S /S G is an 2M x 64 bits EDO D ynam ic RAM M ODULE w hich • 168 pins Dual In-L ine Package is - G M M 7642010C S : S older plating
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GMM764201GCS/SG-6/7
7642010C
16bit
20pin
GMM7642910CS/SG
1/1000inches)
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5118165
Abstract: No abstract text available
Text: SIEMENS 1M x 64-Bit Dynamic RAM EDO Module HYM 641005GS-50/-60 168 pin buffered DIMM module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 1M x 64 organisation • Extended Data Out EDO • Performance:
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64-Bit
641005GS-50/-60
L-DIM-168-19
DM168-19
5118165
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M x 64-Bit Dynamic RAM EDO Module HYM 642005GS-50/-60 168 pin buffered DIMM module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2M x 64 organisation • Extended Data Out EDO • Performance:
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64-Bit
642005GS-50/-60
L-DIM-168-20
DM168-20
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2P4N
Abstract: nec 2p4n R06S Marking M60 NEC 4217405-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e sc rip tio n The /iPD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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uPD42S17405
uPD4217405
/iPD42S17405
/tPD42S17405
26-pin
/fPD42S17405-50,
jfPD42S17405-60.
2P4N
nec 2p4n
R06S
Marking M60
NEC 4217405-60
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Hyper Page Mode - EDO • Performance: ^RAC RAS access time
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314405BJ/BJL-50/-60/-70
P-SOJ-26/20-5
85max
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Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU — DATASHEET EDC2B V7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282-(60/70)JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V7282-
16MByte
EDC2BV7282-
16-megabyte
168-pins,
V17805A-
74ABT16244
168-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2B V7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V7282B-60JG-S
16MByte
EDC2BV7282B-60JG-S
16-megabyte
168-pins,
MB81V17805B-60PJ
74ABT16244
72-pin
144-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 2.0 FUJI' DATA SHEET - * EDC2U V6482- 60/70 (J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga
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V6482-
16MByte
EDG2UV6482-
16-megabyte
168-pins,
V17805A-
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
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TC5118325BJ/BFT-70
18325BJ/BFT
5118325B
400mil)
I/032
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