high resolution reflective optocoupler
Abstract: 894nm motion sensor doppler effect Balluff ROTARY ENCODER vcsel 1300nm VCSEL multimode 1300nm vcsel spice model motion DOPPLER 1550nm vcsels VCSEL
Text: VCSELs in Various Sensor Applications By: Dr. Jim Tatum First published in Proceedings of Sensors Expo 2005 FINISAR CORPORATION January 9, 2007 Contents VCSEL 101 What is a VCSEL? Where is it used? Why? VCSEL Sensor Attributes Advantages, Uniqueness, etc.
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850nm
1300nm
780nm
1550nm
1999m
650nm
1550nm
high resolution reflective optocoupler
894nm
motion sensor doppler effect
Balluff ROTARY ENCODER
vcsel 1300nm
VCSEL multimode 1300nm
vcsel spice model
motion DOPPLER
1550nm vcsels
VCSEL
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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D1955NL
Abstract: D1955
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
D1955NL
D1955
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: PT6620 Series 6 A 12-V Input Integrated Switching Regulator SLTS036C - FEBRUARY 1999 - REVISED JUNE 2003 Standard Application REMOTE SENSE 1 VIN 4,5,6 PT6620 VOUT 11,12,13 3 C1 STBY 7,8,9,10 + C2 + LOAD Q1 COM COM C1 = Required 330µF electrolytic 1 C2 = Required 330µF electrolytic (1)
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PT6620
SLTS036C
16-pin
14-Pin
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ADSN-2051
Abstract: IR SENSOR wheel mouse optical mouse controller ADNS-2610 ir wheel movement sensor Optical encoder mouse encoder microsoft SERIAL MOUSE circuit adns 2051 optical mouse sensor microsoft optical mouse microcontroller mouse ir sensor
Text: EKM8003 Optical Mouse Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. December 2002 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EKM8003
DNS-2610
DNS-2620
FIG12.
PDIP-18L
300MIL
OP-18L
ADSN-2051
IR SENSOR wheel mouse
optical mouse controller
ADNS-2610
ir wheel movement sensor
Optical encoder mouse encoder
microsoft SERIAL MOUSE circuit
adns 2051 optical mouse sensor
microsoft optical mouse microcontroller
mouse ir sensor
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Untitled
Abstract: No abstract text available
Text: MODEL: PJ-068B-SMT date 10/23/2012 page 1 of 3 DESCRIPTION: MID MOUNT DC POWER JACK FEATURES •m id m ount for low profile applicat ions •fully shielded •high current rat ing RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age
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PJ-068B-SMT
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Untitled
Abstract: No abstract text available
Text: data sheet a v a n te k MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek SOT-143 Package Features Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.3 GHz 11.0 dB typical Gain at 1.0 GHz
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MSA-0311
OT-143
MSA-0311
ADS-1592/R-9-89
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COUGAR
Abstract: CFRN MC33269ST-5.0T3 Cougar Components 172B 26X6 AC293 CL11 50-cfrn 470 NR - 10D
Text: 2 's e COUGAR COMPONENTS AC293 10 TO 200 MHz TO-8 CASCADABLE AMPLIFIER T y p ic a l Value* L o w N oise F ig u r e . H ig h G a in .
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AC293
COUGAR
CFRN
MC33269ST-5.0T3
Cougar Components
172B
26X6
AC293
CL11
50-cfrn
470 NR - 10D
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EX2001
Abstract: No abstract text available
Text: zo/yo/yooz □ 'abh 'qui H TV anjpjj qi cr □ m \ > “□ a TJ m CJ Tl XI m m M IS CO VO I m 00 VO I VO U1 VO > vO U1 VO VO TJ > n x > cn X) > m A D D P A R T N U M B ER EC NO: SH2005-0096 m DRWN:XSZHANG 2001/12/16 CH'KD: 2005/01/06 APPR: YTYAP 2005/01/06
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SH2005-0096
MPGA959
5D-51289-002
EX2001
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SGA9189Z
Abstract: No abstract text available
Text: Preliminary SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device is based on a Silicon Germanium
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SGA-9189
OT-89
EDS-101497
SGA9189Z
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transistor P1z
Abstract: SGA9189Z 130C SGA-9189 transistor 45 f 122
Text: SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-9189 is
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SGA-9189
SGA-9189Z
SGA-9189
-9189Z
OT-89
EDS-101497
transistor P1z
SGA9189Z
130C
transistor 45 f 122
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RF MMIC 35z
Abstract: mmic a35 mmic 35z mmic marking L SGA-3586 SGA-3586Z sga3586z SIRENZA MARKING
Text: SGA-3586 SGA-3586Z Product Description The SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
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SGA-3586
SGA-3586Z
SGA-3586
EDS-101382
RF MMIC 35z
mmic a35
mmic 35z
mmic marking L
SGA-3586Z
sga3586z
SIRENZA MARKING
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SGA-3563Z
Abstract: SGA3563Z mmic a35 SGA-3563 mmic marking 255 sot363 A35Z mmic marking 255 MMIC SOT 363 marking 850 inductor 470 high gain MMIC AMPLIFIER sot-363
Text: SGA-3563 SGA-3563Z Product Description The SGA-3563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
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SGA-3563
SGA-3563Z
SGA-3563
OT-363
EDS-101496
SGA-3563Z
SGA3563Z
mmic a35
mmic marking 255 sot363
A35Z
mmic marking 255
MMIC SOT 363 marking 850
inductor 470
high gain MMIC AMPLIFIER sot-363
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Untitled
Abstract: No abstract text available
Text: zo/yo/yooz □ 'abh 'qui H TV anjpjj qi cr □ m \ > “□ a CJ TJ m Tl XI m m M IS CO VO I 00 m VO I VO U1 VO > vO U1 VO VO TJ > n x > cn m X) > A D D P A R T N U M B ER EC NO: SH2005-0096 m DRWN:XSZHANG 2001/12/16 CH'KD: 2005/01/06 A PPR: YTYAP 2005/01/06
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SH2005-0096
MXJ-54
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MMIC "SOT 89" marking
Abstract: SBW-5089Z MMIC "SOT 89" marking 12 mmic amplifier sot-89 ECB-100607 ML200C SBW-5089 SBW5089Z Sirenza amplifier SOT-89 Marking MMIC marking R* SOT89
Text: Product Description The SBW-5089 Z is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases
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SBW-5089
OT-89
EDS-103325
MMIC "SOT 89" marking
SBW-5089Z
MMIC "SOT 89" marking 12
mmic amplifier sot-89
ECB-100607
ML200C
SBW5089Z
Sirenza amplifier SOT-89 Marking
MMIC marking R* SOT89
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CL10B103KBNC
Abstract: CL10B103K LL1608-FS27NJ ML200C SGL-0163 SGL-0163Z TOKO 470 CLASS D ECB-101761 CL10B103KB device marking sgl
Text: Product Description The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has
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SGL-0163
EDS-101501
CL10B103KBNC
CL10B103K
LL1608-FS27NJ
ML200C
SGL-0163Z
TOKO 470 CLASS D
ECB-101761
CL10B103KB
device marking sgl
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Untitled
Abstract: No abstract text available
Text: MODEL: PJ-030CH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1
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Untitled
Abstract: No abstract text available
Text: MODEL: PJ-030DH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1
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S 282-K
Abstract: No abstract text available
Text: PT6510 Series 8-A 5-V/3.3-V Input Adjustable ISR with Short-Circuit protection SLTS220 FEBRUARY 2004 Features • • • • • • • • • • 8-A Rated Output Current Replaces PT6500 Series High Efficiency 91% for PT6511 Small Footprint (0.75 in², Suffix ‘N’)
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SLTS220
PT6500
PT6511)
16-pin
PT6511¨
PT6512¨
PT6513¨
PT6514¨
PT6515¨
S 282-K
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Untitled
Abstract: No abstract text available
Text: MODEL: PJ-069B-SMT date 10/23/2012 page 1 of 3 DESCRIPTION: MID MOUNT DC POWER JACK FEATURES •m id m ount for low profile applicat ions •fully shielded •high current rat ing RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age
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Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE121020FB 1 / 121220FB 1 / 121520FB 1 / 121820FB 122220 FB 1 / / 1 122720FB / 1 123320FB 1 / 123920FB 1 / 124720FB 1 I 125620FB 1 / 126820FB / 1 128220FB / 1 121030FB / 1 121230FB / 1 121530FB / 1 121830FB
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ECQE121020FB
121220FB
121520FB
121820FB
122720FB
123320FB
123920FB
124720FB
125620FB
126820FB
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Untitled
Abstract: No abstract text available
Text: data sheet van « 1982 A V A N TEK MSA-0486 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features .020 .51 Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 3.2 GHz 12.5 dBm typical Pi dB at 1.0 GHz
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MSA-0486
ADS-1584/R-9-89
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Untitled
Abstract: No abstract text available
Text: data sheet I0A V A N T EK m sa-°286tm MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features • • • • • • .020 .51 Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.5 GHz
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gain12
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