Untitled
Abstract: No abstract text available
Text: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation
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28C256T
28C256T
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d2803
Abstract: 32K x 8-Bit EEPROM
Text: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUT I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation
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28C256T
28C256T
d2803
32K x 8-Bit EEPROM
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Untitled
Abstract: No abstract text available
Text: HTEE25608 High Temperature EEPROM 256Kb Features n 256kb EEPROM n Operating temperature range of -55°C to +225°C n Single +5 V analog supply n Serial and Parallel interface n SPI serial communications n Integrated high voltage supply n Page and Byte write capability
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HTEE25608
256Kb
HTEE25608
ADS-14232
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Untitled
Abstract: No abstract text available
Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write
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CAT28C256
CAT28C256
CAT28C256/D
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CAT28C256L12
Abstract: No abstract text available
Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write
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CAT28C256
CAT28C256/D
CAT28C256L12
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PDF
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1N914
Abstract: 28C256 CAT28C256 MS-011 MS-016
Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write
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CAT28C256
CAT28C256
CAT28C256/D
1N914
28C256
MS-011
MS-016
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PDF
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28C256TRP-120
Abstract: 28C256TRP-150
Text: SPACE ELECTRONICS INC. 256K-BIT EEPROM - 32K X 8 EEPROM SPACE PRODUCTS 28C256TRP A14 1 28 VCC A12 2 27 WE VCC A7 3 26 A13 GND A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O 7 I/O 0 11 18 I/O 6 I/O 1 12 17 I/O 5 I/O 2 13 16
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256K-BIT
28C256TRP
99Rev3
28C256TRP-120
28C256TRP-150
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PDF
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EEPROM 28C256
Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)
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AT-28C256
MIL-M38535
AT-28C010
AT-28C040
AT-28C256
1C0302
3E0319
3E0323
3G0338
EEPROM 28C256
7b9729
1C0302
28C040
28C256
82307
28C256 atmel
4b23
6D9708
6C9638
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PDF
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28C256APC-2
Abstract: hex55
Text: Turbo IC, Inc. 28C256A HIGH SPEED CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28C256A
28C256APC-2
hex55
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PDF
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sumitomo epoxy 6600
Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
Text: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)
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256Kbit
AT28BV256
AT28C256
AT28HC256
32Kbit
AT28C256,
AT28C256F,
AT28HC256,
AT28HC256F,
1W0117
sumitomo epoxy 6600
sumitomo epoxy 1143
at27c256 data retention
AT29LV020
sumitomo silver epoxy
28BV256
0c002
ATMEL AT27lv256
AT49*512
AT28C256
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PDF
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28 pin 28c256
Abstract: CAT28C256 1N914 28C256 28C256-12 28C256-15 CAT28C256NI-15T
Text: CAT28C256 32K-Bit Parallel EEPROM FEATURES • Fast Read Access Times: 120/150ns ■ Hardware and Software Write Protection ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: –1 to 64 Bytes in 5ms –Page Load Timer –Active: 25 mA Max.
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CAT28C256
32K-Bit
120/150ns
CAT28C256
8mmx13
500/Reel
120ns
150ns
28C256
CAT28C256NI-15T
28 pin 28c256
1N914
28C256-12
28C256-15
CAT28C256NI-15T
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PDF
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free circuit eeprom programmer
Abstract: No abstract text available
Text: CAT28C256 256K-Bit PARALLEL EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max
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CAT28C256
256K-Bit
120/150ns
CAT28C256
MD-1004,
free circuit eeprom programmer
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PDF
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1N914
Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
Text: CAT28C256 256K-Bit Parallel EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max
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Original
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CAT28C256
256K-Bit
120/150ns
CAT28C256
8mmx13
500/Reel
120ns
150ns
28C256
CAT28C256NI-15T
1N914
28C256-12
28C256-15
CAT28C256NI-15T
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PDF
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LGLQ
Abstract: 28C256 32KX8 32-PIN
Text: • MARCH 1990 FLESSE Y SEMICONDUCTORS PRELIMINARY INFO RM ATIO N PNC28C256 CMOS/SNOS EEPROM HIGH PERFORMANCE 32KX8 ELECTRICALLY ERASABLE PROM The PNC28C256 is a high performance EEPROM fabricated with Plessey Sem iconductors’ proprietary CMOS/SNOS technology. This full-featured device follows
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PNC28C256
32KX8
PNC28C256
160/is/byte.
PS2386
LGLQ
28C256
32-PIN
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PDF
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D28C256
Abstract: No abstract text available
Text: NEC JUPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿/PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga nized as 32,768 x 8 bits and fabricated with an ad vanced CMOS process for high performance and low
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uPD28C256
/PD28C256
144-bit
iPD28C256
64-byte
The/JPD28C256
28-pin
831H--<
JHPD28C256
D28C256
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PDF
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Untitled
Abstract: No abstract text available
Text: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K
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M28C010
1024K
MM28C010
128Kx8Electrically
28C256
TheMM28C010isavailableina
32pin
MM28C010
T-46-13-27
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PDF
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Untitled
Abstract: No abstract text available
Text: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ M ilitary, Range • -5 5 ° C • —40° C • 0 ° C to ■ Data Protection Extended a n d Com m ercial Temperature • Hardware: Power Up/Down Protection Circuitry • JEDEC Approved Software Write Protection
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28C256A
50nsec
883HEH
MD400111/A
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PDF
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Untitled
Abstract: No abstract text available
Text: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC
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OCR Scan
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M28C010
1024K
MM28C010
128Kx
28C256
32pinmodule
MD400044/B
28C010
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PDF
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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PDF
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KM28C256-15
Abstract: 28c256 samsung
Text: KM28C256 CMOS EEPROM 32Kx8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte W rite & Page W rite — Single TTL Level W rite Signal — Internal Address and Data Latch
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KM28C256
32Kx8
KM28C256:
KM28C256I:
64-byte
150ns
60mA--
28C256
KM28C256-15
28c256 samsung
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PDF
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Untitled
Abstract: No abstract text available
Text: KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal — Internal Address and Data Latch
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KM28C256
KM28C256:
KM28C256I:
64-byte
150ns
100/j
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PDF
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5555 is 6 pin smd ic
Abstract: A14A smd smd A14A
Text: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ H igh S peed • 150 n s ec M axim um A ccess Time ■ L o w P ow er C M O S Technology • 8 0 m A A ctive C urrent • 35 0 fjA S tan db y Current ■ Fast W rite C ycle Times
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28C256A
28C256A
MD400111/A
5555 is 6 pin smd ic
A14A smd
smd A14A
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PDF
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Untitled
Abstract: No abstract text available
Text: E/M28C256A 256K High Speed EEPROM November 1989 PRELIMINARY DATA SHEET FEATURES • Military and Extended Temperature Range • -55° C to +125° C Operation Military . -40° C to +85° C Operation (Extended) High Endurance • 10,000 Cycles/Byte • 10 Year Data Retention
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E/M28C256A
28C256A
MD400078/B
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PDF
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M28C256A
Abstract: No abstract text available
Text: E/M28C256A 256K High Speed EEPROM PRELIMINARY DATA SHEET November 1989 FEATURES • Military and Extended Temperature Range • -55° C to +125° C Operation Military • -40° C to +85° C Operation (Extended) High Endurance • 10,000 Cycles/Byte • 10 Year Data Retention
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E/M28C256A
80256A
MD400078/8
M28C256A
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