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    EEPROM 28C64 Search Results

    EEPROM 28C64 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    EEPROM 28C64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28F512-12C3

    Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
    Text: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild


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    PDF 11F-16, M28F512-12C3 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64

    28CXX

    Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
    Text: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write


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    PDF AN601 DS00601A-page 28CXX 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


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    PDF GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS

    28C64AP

    Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
    Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times


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    PDF 28C64A 28C64AP 28C64A 28C64APC-2 hex55 ROM 8K x 8

    28C64A-15

    Abstract: 28C64A ic 8870 ttl
    Text: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the


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    PDF 28C64A 28C64A DS11109G-page 28C64A-15 ic 8870 ttl

    28C64 EEPROM

    Abstract: eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616
    Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -DATA RETENTION BAKE (200°C) -CYCLE TEST -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY LIFE TEST


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    PDF AT-28C64 AT-28C64 187-3B 133317B2 232510B-2 3A0781 3A0782B1 4B1973 4D1971 4D1971-2 28C64 EEPROM eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616

    am29ma16

    Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
    Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.


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    Untitled

    Abstract: No abstract text available
    Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C64B 64K-Bit 90/120/150ns CAT28C64B MD-1011,

    1N914

    Abstract: 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64B CAT28C64BGI-12T CAT28C64BGI-15T MAXS-100 CAT28C64BWI-12T
    Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C64B 64K-Bit 90/120/150ns CAT28C64B MD-1011, 1N914 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64BGI-12T CAT28C64BGI-15T MAXS-100 CAT28C64BWI-12T

    28C64B

    Abstract: CAT28C64B 1N914 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T
    Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C64B 64K-Bit 90/120/150ns CAT28C64B 28C64B 1N914 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T

    eeprom 2816

    Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
    Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel


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    PDF 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F eeprom 2816 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864

    28C64 EEPROM

    Abstract: pd28c64 nec 28C64 27c eeprom
    Text: m JUPD28C64 8192 X 8-Bit CMOS EEPROM e NEC Electronics Inc. Description Pin Configuration The^PD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 8,192 x 8 bits and fabricated with an advanced CMOS process for high performance and tow power


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    PDF uPD28C64 PD28C64 536-bit /jPD28C64 32-byte 28-pin /JPD28C64 28C64 EEPROM nec 28C64 27c eeprom

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without


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    PDF 28C64A Time--200 DS111091-page 28C64A 8x20mm

    KM28C64A20

    Abstract: KM28C64A-20
    Text: KM28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal


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    PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 1555H KM28C64A20 KM28C64A-20

    Untitled

    Abstract: No abstract text available
    Text: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


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    PDF 28C64A 100nA 28-pin 28-Lead, 44-Lead, 10x10mm) bl03201 001DS11 DS00049E

    26c64

    Abstract: 26C64A
    Text: $ 28C64A M ic r o c h ip 64 K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non-volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte


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    PDF Time--200 28-pin 32-pin 8x20mUPPORT 28C64AF 8x20mm 28C64A DS11109F-page 26c64 26C64A

    M28C64

    Abstract: M28C64-W PDIP28 PLCC32 S028
    Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION


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    PDF M28C64 120ns M28C64-xxW PDIP28 PLCC32 TSOP28 TSOP28 M28C64 M28C64-W PDIP28 PLCC32 S028

    Untitled

    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years


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    PDF 28C64A 28-pin DS11109F-page Q01B421

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
    Text: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


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    PDF 28C64A 28-pin 32-pin MS-016AE DS00049M-page 28C64A 28C64A-15 28C64A-20 28C64A-25 MS-011

    28C64A

    Abstract: A12C
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


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    PDF 28-pin 32-pin 28C64A A12C

    Untitled

    Abstract: No abstract text available
    Text: KM28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal


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    PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 00f/Aâ

    KM28C64A-20

    Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
    Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write


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    PDF KM28C64A/KM28C65A KM28C64A/65A: KM28C64AK65AI: KM28C65A) 64-Byte 120ns 7Tb4142 KM28C64A/KM28C65A KM28C64A-20 KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25

    Untitled

    Abstract: No abstract text available
    Text: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


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    PDF 28C64A 28-pin 32-pin DS11109G-I

    Untitled

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms


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    PDF 28-pin 32-pin DS111251-page