AK6416A
Abstract: AK93C12A AK93C10 Hex schmitt trigger ecl NATIONAL LINEAR VOL2 AK93C10AF NATIONAL LINEAR VOL1 93c45a AN0050
Text: DATASHEET Microwire type . SCI type Serial Communication Interface . I2C™ type . DAC+EEPROM .
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AK93CXX
AK64XX
AK98XX
AK9824
12Kbit
AN018-00
AN019
AK9822
AK6416A
AK93C12A
AK93C10
Hex schmitt trigger ecl
NATIONAL LINEAR VOL2
AK93C10AF
NATIONAL LINEAR VOL1
93c45a
AN0050
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28CXX
Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
Text: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write
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AN601
DS00601A-page
28CXX
28C64
28C64 EEPROM
93CXX
200B
24LC16
AN601
28Cxxx
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AN2014
Abstract: M93C stmicroelectronics eeprom
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,
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AN2014
AN2014
M93C
stmicroelectronics eeprom
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AN2014
Abstract: RL 66 EEPROM SCR POWER SUPPLY SPI EEPROM code flow diagram EEPROM stmicroelectronics "serial eeprom" stmicroelectronics traceability M93C stmicroelectronics eeprom
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,
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AN2014
AN2014
RL 66 EEPROM
SCR POWER SUPPLY
SPI EEPROM code flow diagram
EEPROM
stmicroelectronics "serial eeprom"
stmicroelectronics traceability
M93C
stmicroelectronics eeprom
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microchip eeprom
Abstract: EEPROM 24LC256 24LC256 AN1019 JESD47 MICROCHIP AN1019 JESD-47
Text: AN1019 EEPROM 耐擦写能力教程 作者： David Wilkie Microchip Technology Inc. 基本术语 “耐擦写能力 （Endurance）”（指 EEPROM）的定义 中包含一些需要明确定义和理解的词语和短语。从以下 段落可以看出，不同厂商使用不同的标准。“耐擦写循
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AN1019
IEEE-Std1005-1998
JESD47
DS01019A
microchip eeprom
EEPROM 24LC256
24LC256
AN1019
JESD47
MICROCHIP AN1019
JESD-47
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AN2014
Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.
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AN2014
stmicroelectronics eeprom
AI-117
QNEE9801
stmicroelectronics serial eeproms
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EEPROM retention testing
Abstract: 24LC256 AN1019 JESD47 MICROCHIP AN1019
Text: AN1019 EEPROM Endurance Tutorial Microchip uses a more stringent criteria for endurance: Author: David Wilkie Microchip Technology Inc. BASIC TERMS The definition of “endurance” as applied to EEPROMs contains various words and phrases that require clear
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AN1019
DS01019A-page
EEPROM retention testing
24LC256
AN1019
JESD47
MICROCHIP AN1019
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28CXX
Abstract: EEPROM flotox 24C02A 24C04A 24CXX 24LCXX 93CXX sem 2107
Text: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the
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DS21055B-page
28CXX
EEPROM flotox
24C02A
24C04A
24CXX
24LCXX
93CXX
sem 2107
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24C02A
Abstract: 24C04A 24CXX 24LCXX 28CXX 93CXX EEPROM flotox
Text: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the
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24C02A
24C04A
24CXX
24LCXX
28CXX
93CXX
EEPROM flotox
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s2914a
Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Text: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .
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AK93CXX
SCIAK64XX
DACEEPROMAK98XX
ST25C16
ST25W16
NM24C17LZ
AK6010A
AT24C32
CAT24C32
CAT24WC32
s2914a
ak6416af
s2914
ATMEL 24C32A
S-29255
AK6416A
AK93C12A
national semiconductor cmos
ATMEL 93C86
93c45
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hot electron devices
Abstract: SGS-Thomson ball grid array VLSI Vision
Text: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,
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Untitled
Abstract: No abstract text available
Text: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M9306 •LlêïïO M O igS 256 BIT 16x16 SERIAL NMOS EEPROM SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10%) TTL COMPATIBLE 16 x16 READ/WRITE MEMORY LOW STANDBY CURRENT LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY RELIABLE FLOTOX PROCESS
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M9306
16x16)
M9306
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Untitled
Abstract: No abstract text available
Text: M9346 ADVANCE DATA 1024 BIT 64 x 16 SERIAL EEPROM • • • • • • • • • LOW COST SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V=t 10%) TTL COMPATIBLE 6 4 x 1 6 READ/WRITE MEMORY LOW STANDBY POWER NON-VOLATILE ERASE AND WRITE RELIABLE FLOTOX PROCESS
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M9346
64x16
M9346
64x16.
16-bit
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M9306B1
Abstract: M9306 M9306B1-B6
Text: as 256 BIT 1 6 x16 SERIAL EEPROM • • • • • • • • LOW COST SINGLE SUPPLY (5V ±10°/o) TTL CO M PATIBLE 1 6 x 1 6 READ/W RITE M EM O RY LOW STANDBY POWER NON-VOLATILE RELIABLE FLOTOX PROCESS EXTENDED TEM PERATURE RANGE ^ ’ I 1 8 F M Plastic
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M9306
rI6a16)
16x16)
16x16
M9306B1
M9306B1-B6
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eurosil
Abstract: eurosil clock EUROSIL ELECTRONIC GMBH Eurosil Electronic Z6210PC Block Diagram of 8057 e6210
Text: e e6210 64 BIT SERIAL EEPROM Pad configuration Features • 64 bit serial organisation • • • • • Bits individually addressable 2 Volt operation 100 000 erase/write cycles Self timed programming cycle 10 nA typ stand-by current ss J] CLK ;~3 JÌ
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e6210
Z6210PC
e6210
Z6210f4aÃ
eurosil
eurosil clock
EUROSIL ELECTRONIC GMBH
Eurosil Electronic
Block Diagram of 8057
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FZj 111
Abstract: M9346B1 M9346B6 M9346M1 M9346M6
Text: SGS-THOMSON M9346 ¡y 1024 BIT 64 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY
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M9346
64x16
M9346
14-LEAD
FZj 111
M9346B1
M9346B6
M9346M1
M9346M6
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M9306B1
Abstract: M9306 M9306B6 M9306M1 M9306M6
Text: f Z J SGS-THOMSON M9306 256 BIT 16x 1 6 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT V * ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY
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M9306
16x16)
16x16
M9306
O13-D/1
M9306B1
M9306B6
M9306M1
M9306M6
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M9306M6
Abstract: M9306 M9306B1 M9306B6 M9306M1
Text: f Z J SGS-THOMSON M9306 256 BIT 16x 1 6 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT V * ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY
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M9306
16x16)
16x16
M9306
O13-D/1
M9306M6
M9306B1
M9306B6
M9306M1
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M9346B1
Abstract: poo1 M9346B6 M9346M1 M9346M6
Text: T/ SGS-THOMSON M9346 ilL ir a M O ig S 1024 BIT 6 4 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY
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M9346
64x16
M9346
14-LEAD
M9346B1
poo1
M9346B6
M9346M1
M9346M6
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PDF
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M9306B1
Abstract: M9306B6 m9306
Text: F Z J * 7 #« S G S -T H O M S O N [ * K [ l L [ i § ¥ [ i » 0(gS M 9306 256 BIT (16x16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY . X ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE
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16x16)
M9306
D15-D0
M9306
M9306B1
M9306B6
M9306M1
M9306M6
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stc 8000 h
Abstract: No abstract text available
Text: bDE D SHARP CORP • filfiOTTfl OODTSSS 156 « S R P J 7 ^ - ‘? 4 NEW PRODUCT INFORMATION LH6N00 ■ CMOS 256K 32Kx8-btt Non-Volatile Dynamic RAM Description Pin Connections The LH6N00 is a high speed 256K (32Kx8) bit pseudo-static NVRAM which is fabricated using Sharp
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LH6N00
32Kx8-btt)
LH6N00
32Kx8)
stc 8000 h
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Untitled
Abstract: No abstract text available
Text: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp
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LH6N10/LH6N11
LH6N10/11
128KX8)
LH6N10
LH6N11
LH6N10/LH6N11
100ns
32-pin
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SC-15
Abstract: EEPROM flotox Japanese Transistor Cross References
Text: u these components. In this paper, we will focus on the technology factors by comparing the three dom inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES
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