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    EFA060BV Search Results

    EFA060BV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EFA060BV Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF

    EFA060BV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EFA060B

    Abstract: EFA060BV
    Text: EFA060B/ EFA060BV Low Distortion GaAs Power FET FEATURES • • • • • • • 350 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    EFA060B/ EFA060BV EFA060B EFA060BV 12GHz EFA060BV) EFA060B 12GHz PDF

    EFA060B

    Abstract: 867 905 352 EFA060BV
    Text: Excelics EFA060B/EFA060BV DATA SHEET Low Distortion GaAs Power FET 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original
    EFA060B/EFA060BV EFA060B EFA060BV 12GHz EFA060B EFA060BV. 867 905 352 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


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