EFC240B
Abstract: No abstract text available
Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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EFC240B
Abstract: No abstract text available
Text: Excelics EFC240B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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EFC240B-100F
Abstract: No abstract text available
Text: Excelics EFC240B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • 63 Dia. P1dB 24 256 TYP. G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=10V, Ids=50% Idss Gain at 1dB Compression Vds=10V, Ids=50% Idss Power Added Efficiency at 1dB Compression
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EFC240B-100F
100mil
EFC240B-100F
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180MIL
Abstract: No abstract text available
Text: EFC240B-180F Low Distortion GaAs Power FET ISSUED 10/04/2006 FEATURES • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +31.0 dBm TYPICAL OUTPUT POWER 16.5 dB TYPICAL POWER GAIN AT 2GHz 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFC240B-180F
180MIL
29dBm
175oC
-65/175oC
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Untitled
Abstract: No abstract text available
Text: EFC240B-100P Low Distortion GaAs Power FET UPDATED 10/04/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 8dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B-100P
100MIL
12GHz
18GHz
175oC
-65/175oC
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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transistor C55 7B
Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126
Text: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the
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MAX11014
2000/XP/Vista
MAX11014.
32-Bit
MAX11014
transistor C55 7B
AT90USB1286-16MU
SSL8000000
transistor C55 7c
EPM570T100C5
SSL800
SSL8000000E18FAE
C1005C0G1H101J
C1005C0G1H151J
MAX6126
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