Vactec
Abstract: VTT-C40 phototransistor peak 550 nm Vactec 25
Text: S bE D • 3Q3ÜLÜT 0001174 T12 M V C T .040" NPN Phototransistor Chip .*“' ^ ‘7 VTT-C40 E G & G VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C40
Vactec
VTT-C40
phototransistor peak 550 nm
Vactec 25
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Photodiode vactec
Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Text: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a
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VTH209XDS
VTH2090,
S1723-04,
Photodiode vactec
S1723-04
"CT scan"
QQQ112M
VTH2090
VTH2091
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Untitled
Abstract: No abstract text available
Text: 5bE J> m 30301, 0^ 0001502 70? GaAs Infrared Emitting Diodes VTE-C11 11 mil Chip — 940 nm E 6 & G »VCT VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C11
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Untitled
Abstract: No abstract text available
Text: 5bE T> m BCOObO^ ODOllbb T4b • VCT VTT-C25 .025" NPN Phototransistor Chip ■E G.& 6 VACT EC CHIP DIMENSIONS inch mm DESCRIPTION EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C25
T-4V-47
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Untitled
Abstract: No abstract text available
Text: 5bE » • a Q a Q b O T Q0Q1214 4E=J ■ V C T GaAIAs Infrared Emitting Diodes VTE-C15AL 15 mil Chip — 880 nm _ E G & G VACTEC DESCRIPTIO N PACKAGE D IM EN SIO N S Inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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Q0Q1214
VTE-C15AL
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diode.18
Abstract: VTE-C18AL Vactec
Text: ShE D • 3Q30bQ^ D0Ü1E15 3 bS GaAIAs Infrared Emitting Diodes VTE-C18AL 18 mil Chip — 880 nm r E G 8« G HVCT -m -iS VACTEC DESCRIPTION PAC K AG E DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C18AL
diode.18
VTE-C18AL
Vactec
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infrared led chip
Abstract: GDQ1213 VTE-C11
Text: S bE D • BOBDbCH GDQ1213 STE ■ GaAIAs Infrared Emitting Diodes VCT <3 V T E -C 1 1 A L 11 mil Chip — 880 nm E G 8. G VACTEC “ DESCRIPTION PACKAGE DIMENSIONS inch (mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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GDQ1213
VTE-C11
infrared led chip
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Untitled
Abstract: No abstract text available
Text: SbE D • B O a O b O 1! 0 0 0 1 1 7 4 TIE « V C T V T T -C 4 0 .040" NPN Phototransistor Chip E G & G VACT EC DESCRIPTION ~ CHIP DIMENSIONS EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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2850K)
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Vactec
Abstract: EG*G Vactec EG*G Vactec volume mechanical engineering project vactrol
Text: 3^E D ac^oba^ ooqdtis Custom and Semi-Custom Vactrols m m v c t E G 8« G V A C T E C Upon request, and where sufficient quantities are involved, EG&G Vactec will test standard parts to your unique set of specifications. The advantage of testing parts under actual operat
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3030tiDT
00QDT1S
Vactec
EG*G Vactec
EG*G Vactec volume
mechanical engineering project
vactrol
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VTT-C50
Abstract: Vactec
Text: .S b E D BDaObO^ OOOllflD .050" NPN Phototransistor Chip 21b HI V C T VTT-C50 E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
2S50K)
VTT-C50
Vactec
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Untitled
Abstract: No abstract text available
Text: 5LE D BQBGbG^ D D O i n O IbS IVCT VTA-C50 .050" NPN Photodarlington Chip E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTA-C50
2850K)
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mechanical engineering project
Abstract: Vactec electrical engineering projects test tooling
Text: Upon request, and where sufficient quantities are involved, EG&G Vactec will test standard parts to a customer's unique set of specifica tions. The advantage of testing parts under actual operating conditions is guaranteed per formance in the application.
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Vactec
Abstract: VTT-C25
Text: SbE D BÜBDbD^ ODdllbb c14b V TT -C 2 5 .025" NPN Phototransistor Chip •E G.& D E SC R IP T IO N IVCT G VACTEC C H IP D IM E N S IO N S inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C25
2850K)
T-Hl-47.
Vactec
VTT-C25
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Untitled
Abstract: No abstract text available
Text: SbE D • a o a D b D T D 0 G 1 2 1 3 STE ■ VCT T ~ ~ A - |^ GaAIAs Infrared Emitting Diodes V TE - C 1 1 A L 11 mil Chip — 880 nm ~~ E G & G VACT EC DESCRIPTION P A C KA G E DIMENSIONS inch (mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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diode.18
Abstract: Vactec 25 Vactec VTE-C18
Text: 5LE D • 3 D 3 0 b Q cl □ □ □ 1 2 0 3 b43 H V C T GaAs Infrared Emitting Diodes VTE-C18 18 mil Chip — 940 nm T-si-n E G & G VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3D30b0cl
00012D3
VTE-C18
diode.18
Vactec 25
Vactec
VTE-C18
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Vactec
Abstract: VTA-C50 Vactec 25
Text: 5LE D BGBGbCn ODOllRG IbS IVCT V T A -C 50 .050" NPN Photodarlington Chip E G & G VACTEC C H I P D I M E N S I O N S inch mm D E S C R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTA-C50
T-41-47
2850K)
Vactec
VTA-C50
Vactec 25
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Untitled
Abstract: No abstract text available
Text: 5bE 3030^0^ D 0001113 n EG kG v a c t e c bQl G 8, G - 4 1-55 VTB9610DS Rev, B PHOTODIODE ARRAY 24 ELEMENT VTB9610 OPTOELECTRONICS E IVCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the photovoltaic mode. The anode of each
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VTB9610DS
VTB9610
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Vactec
Abstract: VTE-C11
Text: 5bE D • 3 D 3 D b O c1 0a012D2 7 0 ? « V C T G aAs Infrared Emitting Diodes I^ VTE-C11 11 mil Chip — 940 nm E G & G VACTEC D E S C R IP T IO N P A C K A G E D IM E N S IO N S EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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012D2
VTE-C11
Vactec
VTE-C11
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VTE-C15AL
Abstract: No abstract text available
Text: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3G30bDT
D001214
VTE-C15AL
VTE-C15AL
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Untitled
Abstract: No abstract text available
Text: BDBObD'i O OO llö b 734 • V C T SbE D VTT-C60 .060* NPN Phototransistor Chip E GIG DESCRIPTION T - 4 1-^-7 VACTEC CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C60
30bCH
2850K)
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Untitled
Abstract: No abstract text available
Text: SbE D BDBQbO^ ÜÜOllflO 21b H V C T VTT-C50 .050" NPN Phototransistor Chip [ fi ì fi VACT EC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
T-41-47
2850K)
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schematic retro reflective sensor
Abstract: Vactec EG*G Optoelectronics Reflective Optical Sensor IR Sensor long range 24016 AN VTR24F1 IR Sensor long distance
Text: LONG RANGE RETRO-REFLECTIVE SENSOR EG elG VACTEC VTR24F1 AN O PTO E L E C T R O N IC S G RO UP C O M P A N Y PRODUCT DESCRIPTION This retro-reflective sensor combines an infrared emitting diode and a unique photodarlington output to provide high sensitivity while rejecting
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VTR24F1
3G30bCH
schematic retro reflective sensor
Vactec
EG*G Optoelectronics
Reflective Optical Sensor
IR Sensor long range
24016 AN
VTR24F1
IR Sensor long distance
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Untitled
Abstract: No abstract text available
Text: 5bE J> m 3 0 3 0 ^ D0Ü1E15 3bS B V C T GaAIAs Infrared Emitting Diodes V T E -C 1 8 A L 18 mil Chip — 880 nm E C U T-m-iq VACTEC PACKAGE DIMENSIONS inch mm DESCRIPTION EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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Untitled
Abstract: No abstract text available
Text: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide
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VT0340S
VTD34
T-41-51
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