TGA1055
Abstract: TGA1055-EPU ultrasonics circuits diagram
Text: Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • • TGA1055-EPU Primary Applications 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm
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Original
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TGA1055-EPU
EG1055B
29GHz
12per
0007-inch
TGA1055
TGA1055-EPU
ultrasonics circuits diagram
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Untitled
Abstract: No abstract text available
Text: TrìQuint SEMICONDUCTOR Advance Product Information Ka Band Power Amplifier TGA1055-EPU Key Features and Performance Primary Applications 0.25um pHEMT Technology LMDS 26.5 - 29 GHz Frequency Range 2W Nominal Pout at 29 GHz Point-to-Point Radio 20 Nominal Gain
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OCR Scan
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PDF
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TGA1055-EPU
EG1055B
29GHz
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Untitled
Abstract: No abstract text available
Text: Advance Product Information SEMICONDUCTOR* Ka Band 2 Watt Power Amplifier Key Features and Performance TGA1055-EPU Primary Applications 0.25um pHEMT Technology LMDS 27 - 29 GHz Frequency Range 2W Nominal Pout at 28 GHz Point-to-Point Radio 20 Nominal Gain
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OCR Scan
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PDF
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TGA1055-EPU
EG1055B
29GHz
0007-inch
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Untitled
Abstract: No abstract text available
Text: TriQuint % Advance Product Information &EM fW N D U m M * Ka Band 2 Watt Power Amplifier Key Features and Performance TGA1055-EPU Primary Applications 0.25 um pHEMT Technology LMDS 20 dB Nominal Gain 2W Nominal Pout Point-to-Point Radio -30 dBc IMR3 @ 26 dBm SCL
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OCR Scan
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PDF
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TGA1055-EPU
EG1055B
29GHz
0007-inch
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