EGN16C105MK
Abstract: 105w JESD22-A114
Text: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
Total154
EGN16C105MK
105w
JESD22-A114
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GRM1882C1H100J
Abstract: No abstract text available
Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
25deg
D10MHz
45dBm
/-10MHz
GRM1882C1H100J
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN16C105MK
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PDF
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