MARKING CODE CCB
Abstract: BC847S
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
MARKING CODE CCB
BC847S
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PDF
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marking 6bs
Abstract: ic 817 BC817U SC74
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Original
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BC817U
VPW09197
EHA07178
IBM10
EHP00223
EHP00222
EHP00224
EHP00218
Aug-28-2001
marking 6bs
ic 817
BC817U
SC74
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PDF
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ic power 22E
Abstract: 3904U power 22E IC 1N916
Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)
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Original
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3904U
100mA
3906U
VPW09197
EHA07178
SC-74
EHP00763
EHP00764
Oct-14-1999
ic power 22E
3904U
power 22E IC
1N916
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PDF
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BCM846S
Abstract: VPS05604 BCM856S
Text: BCM846S 4 NPN Silicon AF Transistor Array 5 6 Precision matched transistor pair: IC 10% For current mirror applications Low collector-emitter saturation voltage 2 Two galvanic internal isolated Transistors 1 Complementary type: BCM856S C1 B2
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Original
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BCM846S
BCM856S
VPS05604
EHA07178
OT363
EHP00381
Aug-30-2002
BCM846S
VPS05604
BCM856S
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PDF
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BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC847S
VPS05604
EHA07178
OT363
EHP00381
EHP00367
Nov-29-2001
EHP00365
BC847S
VPS05604
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA06U NPN Silicon AF Transistor Array • High breakdown voltage 5 4 6 • Low collector-emitter saturation voltage • Complementary type: SMBTA56U PNP 3 • Two ( galvanic) internal isolated Transistors 2 with good matching in one package 1 VPW09197
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Original
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SMBTA06U
SMBTA56U
VPW09197
EHA07178
EHP00819
EHP00821
EHP00815
Jul-02-2001
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PDF
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Untitled
Abstract: No abstract text available
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Original
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BC817U
VPW09197
EHA07178
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PDF
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BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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Original
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BC847S
VPS05604
EHA07178
OT363
EHP00381
EHP00367
Jul-02-2001
EHP00365
BC847S
VPS05604
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PDF
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marking 6bs
Abstract: ic 817 EHP00223 BC817U SC74
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Original
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BC817U
VPW09197
EHA07178
IBM10
EHP00223
EHP00222
EHP00224
EHP00218
Nov-29-2001
marking 6bs
ic 817
EHP00223
BC817U
SC74
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PDF
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H12E
Abstract: h11e ic power 22E
Text: SMBT3904U NPN Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3906U (PNP)
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Original
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SMBT3904U
100mA
SMBT3906U
VPW09197
EHA07178
EHP00763
EHP00764
Jul-02-2001
H12E
h11e
ic power 22E
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PDF
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ic power 22E
Abstract: H12E h11e EHP00761 10K275 marking S1A
Text: SMBT3904S NPN Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3906S (PNP)
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Original
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SMBT3904S
100mA
SMBT3906S
VPS05604
EHA07178
OT363
EHP00763
EHP00764
Jul-02-2001
ic power 22E
H12E
h11e
EHP00761
10K275
marking S1A
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PDF
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Untitled
Abstract: No abstract text available
Text: BC846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5
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Original
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BC846S
EHA07178
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA06U NPN Silicon AF Transistor Array 5 High breakdown voltage 4 6 Low collector-emitter saturation voltage Complementary type: SMBTA56U PNP 3 Two ( galvanic) internal isolated Transistors 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Original
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SMBTA06U
SMBTA56U
VPW09197
EHA07178
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PDF
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Untitled
Abstract: No abstract text available
Text: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Original
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BC817U
VPW09197
EHA07178
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5
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Original
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BC847S
EHA07178
OT363
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PDF
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817-U
Abstract: 6Bs transistor
Text: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197
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Original
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VPW09197
EHA07178
SC-74
EHP00223
EHP00222
EHP00224
EHP00218
Apr-22-1999
817-U
6Bs transistor
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PDF
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ic power 22E
Abstract: 3904S SMBT 3904S 1N916 VPS05604
Text: SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT 3906S (PNP)
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Original
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3904S
100mA
3906S
VPS05604
EHA07178
OT-363
EHP00763
EHP00764
Oct-14-1999
ic power 22E
3904S
SMBT 3904S
1N916
VPS05604
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PDF
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BC817U
Abstract: SC74 BCW66H
Text: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1)
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Original
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BC817U
EHA07178
BC817U
SC74
BCW66H
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PDF
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BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC847S
VPS05604
EHA07178
OT363
BC847S
VPS05604
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PDF
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1Ds SOT363
Abstract: marking 1DS sot363
Text: BC846S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC846S
VPS05604
EHA07178
OT363
1Ds SOT363
marking 1DS sot363
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PDF
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BCM856
Abstract: No abstract text available
Text: BCM846S NPN Silicon AF Transistor Array • Precision matched transistor pair: ∆I C ≤ 10% 4 5 6 • For current mirror applications • Low collector-emitter saturation voltage 1 2 3 • Two galvanic internal isolated Transistors • Complementary type: BCM856S
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Original
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BCM846S
BCM856S
BCM846S:
EHA07178
OT363
BCM856
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PDF
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Untitled
Abstract: No abstract text available
Text: BC846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197
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Original
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BC846U
VPW09197
EHA07178
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PDF
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h11e
Abstract: No abstract text available
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
h11e
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PDF
|
Untitled
Abstract: No abstract text available
Text: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain 4 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package C1 B2 E2 6 5 4 TR2 TR1
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Original
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BC817U
EHA07178
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PDF
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