a6s marking
Abstract: A6s sot23 transistor A6S BAS16 bas16ta
Text: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85
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Original
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BAS16
VPS05161
EHA07002
EHB00023
Aug-29-2001
EHB00024
a6s marking
A6s sot23
transistor A6S
BAS16
bas16ta
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PDF
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BAS16-02W
Abstract: BAS1602W SCD80
Text: BAS16-02W Silicon Switching Diode For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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Original
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BAS16-02W
VES05991
SCD80
Aug-29-2001
EHB00025
BAS16-02W
BAS1602W
SCD80
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PDF
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BAS16S
Abstract: VPS05604 4C3 diode
Text: BAS16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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Original
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BAS16S
OT-363
VPS05604
EHA07193
EHA07291
OT363
Jul-06-2001
EHB00025
BAS16S
VPS05604
4C3 diode
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PDF
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BAS16TA
Abstract: marking a6s BAS16 A6S SOT23
Text: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR Peak reverse voltage- VRM Forward current
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Original
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BAS16
VPS05161
EHA07002
EHB00023
Mar-11-2002
EHB00024
BAS16TA
marking a6s
BAS16
A6S SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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Original
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VSO05561
EHA07002
OT-323
Mar-02-2001
EHB00025
EHB00022
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PDF
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Q62702-A1239
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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6-02W
VES05991
Q62702-A1239
SCD-80
Jul-24-1998
EHB00023
Q62702-A1239
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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Original
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6-02W
VES05991
SCD-80
EHB00025
Oct-08-1999
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PDF
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VPS05604
Abstract: No abstract text available
Text: BAS 16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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Original
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OT-363
VPS05604
EHA07193
EHA07291
OT-363
Aug-09-1999
EHB00025
EHB00022
VPS05604
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PDF
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BAS16W
Abstract: VSO05561 marking A6s
Text: BAS16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type BAS16W Marking A6s Pin Configuration 1=A 2 = n.c. 3=C Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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Original
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BAS16W
VSO05561
EHA07002
OT323
Aug-29-2001
EHB00025
EHB00022
BAS16W
VSO05561
marking A6s
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PDF
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a1231
Abstract: Q62702-A1231
Text: BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage
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Original
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6-03W
VPS05176
Q62702-A1231
OD-323
EHB00023
EHB00024
Mar-13-1998
EHB00025
a1231
Q62702-A1231
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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Original
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VPW09197
EHA07291
SC-74
Apr-21-1999
EHB00025
EHB00022
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16-03W Silicon Switching Diode 2 For high-speed switching applications 1 VPS05176 Type Marking Pin Configuration Package BAS 16-03W B 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85
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Original
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6-03W
VPS05176
OD-323
EHB00023
EHB00025
Mar-13-1998
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PDF
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transistor a1241
Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
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Original
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VPS05604
Q62702-A1241
OT-363
Apr-24-1998
EHB00025
EHB00022
transistor a1241
A1241
transistor a1241 datasheet
VPS05604
5-30K
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PDF
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BAS16-03W
Abstract: No abstract text available
Text: BAS16-03W Silicon Switching Diode 2 For high-speed switching applications 1 VPS05176 Type Marking Pin Configuration Package BAS16-03W B 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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Original
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BAS16-03W
VPS05176
OD323
Jul-02-2ward
EHB00023
EHB00025
Jul-02-2001
BAS16-03W
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAS 16 A6s Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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Original
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VPS05161
EHA07002
OT-23
EHB00023
EHB00024
Mar-02-2001
EHB00025
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PDF
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BAS16
Abstract: BAS16-02L
Text: BAS16-02L Silicon Switching Diode Preliminary data For high-speed switching application 2 1 Type BAS16-02L Marking A6 Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85 Forward current
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Original
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BAS16-02L
Aug-29-2001
100ns,
EHN00017
EHB00022
EHB00025
BAS16
BAS16-02L
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PDF
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VSO05561
Abstract: No abstract text available
Text: BAS 16W Silicon Switching Diode 3 • For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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Original
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VSO05561
EHA07002
OT-323
Oct-07-1999
EHB00025
EHB00022
VSO05561
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PDF
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diode A6s sot 23
Abstract: bas16 marking A6s sot-23 marking TS-5 diode A6s
Text: BAS 16 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAS 16 A6s Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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Original
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VPS05161
EHA07002
OT-23
EHB00023
EHB00024
Oct-07-1999
EHB00025
diode A6s sot 23
bas16
marking A6s sot-23
marking TS-5
diode A6s
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PDF
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