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    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


    Original     		PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    VPS05604

    Abstract: H21E
    Text: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1


    Original     		PDF 3904PN VPS05604 EHA07177 OT-363 EHP00763 EHP00764 Aug-04-1999 EHP00757 VPS05604 H21E

    smbt3904upn

    Abstract: No abstract text available
    Text: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array  High current gain 4 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package


    Original     		PDF SMBT3904UPN VPW09197 EHA07177 smbt3904upn

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


    Original     		PDF SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Jul-11-2001 SMBT3906U

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363

    SC74

    Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 SC74 SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 20may

    h12e

    Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
    Text: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


    Original     		PDF SMBT3904PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00763 EHP00764 Aug-21-2002 h12e ic power 22E SMBT3904PN VPS05604 h11e h22e

    ic power 22E

    Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


    Original     		PDF SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Nov-30-2001 ic power 22E H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768

    SMBT3906S

    Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
    Text: SMBT3906S PNP Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3904S (NPN)


    Original     		PDF SMBT3906S 100mA SMBT3904S VPS05604 EHA07175 OT363 EHP00773 EHP00764 Nov-30-2001 SMBT3906S TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking

    H12E

    Abstract: h11e ic power 22E
    Text: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


    Original     		PDF SMBT3904U 100mA SMBT3906U VPW09197 EHA07178 EHP00763 EHP00764 Jul-02-2001 H12E h11e ic power 22E

    ic power 22E

    Abstract: H12E h11e EHP00761 10K275 marking S1A
    Text: SMBT3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3906S (PNP)


    Original     		PDF SMBT3904S 100mA SMBT3906S VPS05604 EHA07178 OT363 EHP00763 EHP00764 Jul-02-2001 ic power 22E H12E h11e EHP00761 10K275 marking S1A

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


    Original     		PDF SMBT3904U 100mA SMBT3906U VPW09197 EHA07178

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original     		PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904UPN SMBT3904PN OT363

    Q62702-A1202

    Abstract: SMBT 3904S 1N916 3904S VPS05604
    Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


    Original     		PDF 3906S 100mA 3904S VPS05604 OT-363 Q62702-A1202 EHP00773 EHP00764 Sep-07-1998 Q62702-A1202 SMBT 3904S 1N916 3904S VPS05604

    3904S

    Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
    Text: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)


    Original     		PDF 3904S 100mA 3906S VPS05604 OT-363 Q62702-A1201 EHP00764 Sep-07-1998 3904S 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560

    Marking Package Code TF

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363 Marking Package Code TF