Ei type CORE
Abstract: Ei 40 core EI2519 Ei CORE 105 EI-3530 EI3329S EI4035 EI2218 EI-1916 EI2218S
Text: v 60 SAMWHA ELECTRONICS EI CORES Part No. EI1309S Type Dimensions in mm Core Set Parameters EI A 12.50 ±0.20 16.00 ±0.30 19.00 ±0.30 20.00 ±0.30 B 9.10 ±0.40 14.70 ±0.30 15.90 ±0.40 15.85 ±0.35 C 5.00 -0.20 +0.10 4.80 ±0.20 5.10 -0.50 +0.00 5.00 ±0.20
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EI1309S
EI1614S
EI1916S
EI2016S
PL-11
PL-13
PL-15
PL-11,
100kHz,
Ei type CORE
Ei 40 core
EI2519
Ei CORE 105
EI-3530
EI3329S
EI4035
EI2218
EI-1916
EI2218S
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KS0083
Abstract: sc2722 2SC711 SC66 SC28-21 sc38 sc3217 KS0086 SC28 SC-77
Text: KS0083/84 80CH SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD INTRODUCTION 100 QFP KS0083/84 is a graphic type LCD driver LSl which is fabricated by CMOS process for high voltage. In case of segment driver, can be selected 4 bit, 1 bit data transfer or chip select mode.
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KS0083/84
KS0083/84
KS0084
KS0083
KS0103
KS0083
sc2722
2SC711
SC66
SC28-21
sc38
sc3217
KS0086
SC28
SC-77
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240-PIN
Abstract: DDR2-667 PC2-5300 SN13 ps3109
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
DDR2-667
PC2-5300
SN13
ps3109
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
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Untitled
Abstract: No abstract text available
Text: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9 9/7$(' *HQHUDO ,QIRUPDWLRQ *% 0[ ''5 6'5$0 8//< %8)(5(' ',00 )%',00 (&& 3,1 'HVFULSWLRQ The VL395T5160A is a 512M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of thirty-six CMOS 256MX4 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages,
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VL395T5160A
256MX4
240-pin
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AL sn11
Abstract: 240-PIN 64MX8 850C PC2-5300 samsung pc2-5300
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
AL sn11
850C
PC2-5300
samsung pc2-5300
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SN1176
Abstract: hy 3005-2 SA2148
Text: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9 9/7$(' *HQHUDO ,QIRUPDWLRQ *% 0[ ''5 6'5$0 8//< %8)(5(' ',00 )%',00 (&& 3,1 'HVFULSWLRQ The VL395T5160A is a 512M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of thirty-six CMOS 256MX4 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages,
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VL395T5160A
256MX4
240-pin
SN1176
hy 3005-2
SA2148
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PDF
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G1575
Abstract: No abstract text available
Text: G1575 Global Mixed-mode Technology Inc. 14+1 Channel Voltage Buffers for TFT LCD Features General Description Supply Operation Range : 6.5V to 19.5V The G1575 consists of 14+1 channel buffers target toward the needs of thin film transistor liquid crystal
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G1575
100mA
120mA
300mA
TQFP7X7-48
G1575
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ddr2 667
Abstract: SA1137 trace code micron label MT9HTF12872F
Text: Preliminary‡ 240-Pin 512MB, 1GB DDR2 SDRAM FBDIMM SR, FB, x72 Features DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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240-Pin
512MB,
MT9HTF6472F
512MB
MT9HTF12872F
PC2-4200
PC2-5300
10-pair
14-pair
ddr2 667
SA1137
trace code micron label
MT9HTF12872F
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M2SSK1-101
Abstract: C3SS1-10B-20 MP1-11r MPMT3-11R CL-520Y MEPY1-1024 ML1-100W MCB-20 KA2-2223 KA2-2221
Text: Ohjauskojeet Valintaopas ja SSTL-hakemisto Compact-tuotteet tyyppi C • Modular-tuotteet tyyppi M 1SFC150001B1801 Ohjauskojeet 1 FI 03_06 ABB:N OHJAUSKOJEIDEN HYVÄKSYNNÄT JA MERILUOKITUKSET Compactohjauskojeet Modularohjauskojeet X X X X X X X X X X X X
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1SFC150001B1801
A003248
SK615502-B
SK615516-1
SK615546-13
SK615546-5
M2SSK1-101
C3SS1-10B-20
MP1-11r
MPMT3-11R
CL-520Y
MEPY1-1024
ML1-100W
MCB-20
KA2-2223
KA2-2221
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
667Mbps/533Mbps
M01E0107
E1009E20
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DDR2-533
Abstract: DDR2-667
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1009E30
DDR2-533
DDR2-667
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DDR2-667
Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AJFT
512MB
240-pin
655-ball
75V/-0
667Mbps
M01E0107
E1087E20
DDR2-667
EDE5108AJSE-6E-E
EBE51FD8AJFT
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PC2-5300J-555-10-C
Abstract: trace code micron label
Text: Preliminary‡ 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTS51272F – 4GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory module (FBDIMM) with ECC to detect and report
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240-Pin
MT36HTS51272F
PC2-4200
PC2-5300
10-pair
14-pair
09005aef822148b0/source:
09005aef82214898
HTS36C512x72F
PC2-5300J-555-10-C
trace code micron label
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 240-Pin 2GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTF256F – 2GB For the latest data sheets and technical notes, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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240-Pin
MT36HTF256F
PC2-4200
PC2-5300
10-pair
14-pair
09005aef8221488a/Source:
09005aef82214866
HTF36C256x72F
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PDF
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intel 82543
Abstract: 82544EI 82543 82540EP 82544gc CTRL_EXT ATMEL 350 93c46 82544 Family of Gigabit Ethernet intel 82543 software 82541PI Gigabit Ethernet Controller
Text: PCI/PCI-X Family of Gigabit Ethernet Controllers Software Developer’s Manual 82540EP/EM, 82541xx, 82544GC/EI, 82545GM/EM, 82546GB/EB, and 82547xx 317453006EN.PDF Revision 4.0 Legal Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
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82540EP/EM,
82541xx,
82544GC/EI,
82545GM/EM,
82546GB/EB,
82547xx
317453006EN
82540EP/EM
82545GM/EM
intel 82543
82544EI
82543
82540EP
82544gc
CTRL_EXT
ATMEL 350 93c46
82544 Family of Gigabit Ethernet
intel 82543 software
82541PI Gigabit Ethernet Controller
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DDR2-533
Abstract: DDR2-667 E0931E20
Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ABHD Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package 240-pin fully buffered, socket type dual in line
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EBE41FE4ABHD
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0931E20
DDR2-533
DDR2-667
E0931E20
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PDF
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EBE21FD4AGFD-5C-E
Abstract: DDR2-533 DDR2-667 IBIST test Function ebe21fd4agfn-6e-e elpida DDR2 routing
Text: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FD4AGFD
EBE21FD4AGFN
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0868E30
EBE21FD4AGFD-5C-E
DDR2-533
DDR2-667
IBIST test Function
ebe21fd4agfn-6e-e
elpida DDR2 routing
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PDF
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DDR2-667
Abstract: No abstract text available
Text: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE41FE4ACFR
240-pin
655-ball
667Mbps
M01E0706
E1344E20
DDR2-667
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PDF
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ITT 7400
Abstract: EI 33 GVA-60 DSAGER00065 itt 129 i8428 ei 306 20 64
Text: ^ r a - •"i 1 1 t 1 1 1 i 1 1 1 1 1 <5 L- t» c a) B ild 5.4. K e rn e ; a - Schenkelkern, b - M antelkern Bild 5.5. V erschiedene gebräuchliche K em b lech sch n itte fü r Ü b e rtra g e r; a - M -S ch n itt, b - E i-S c h n itt, c - U l-S ch n itt
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TTC 203 thermistor
Abstract: XTR100AP XTR100
Text: B U R R -B R O W N XTR100 ] Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSM ITTER FEATURES A P P LIC A T IO N S • INSTRUMENTATION AM PLIFIER INPUT Low Offtit Voltage. 25m V mix Low Voltage Drift, 0.5m V/°C m ix Low Nonllnairlty, 0.01% mix • INDUSTRIAL PROCESS CONTROL
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XTR100
14-PIN
TTC 203 thermistor
XTR100AP
XTR100
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PDF
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Untitled
Abstract: No abstract text available
Text: QL2007 3.3V and 5.0V pASIC 2 FPGA Combining Speed, Density, Low Cost and Flexibility R ev. E pASIC 2 HIGHLIGHTS 5 Ultimate Verilog/VHDL Silicon Solution -Abundant, high-speed interconnect eliminates manual routing -Flexible logic cell provides high efficiency and performance
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QL2007
-16-bit
1741/Os
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PDF
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HY1906
Abstract: erl-35c HY 1906 ERL-35-2 HY1506 EE-19 N Erl-39 HY3506 HY1001 ERL-35
Text: it «e m t ra. & 5] -f • o HY 0401 í-4 tr era 6P LO) t * 1 HY 0402 -4-1 (6P) UU10. 5—2(4P) HY 1003 A5034 (5P) « * HY 0602 HY 0601 Í-6 <-6-1 (6P) (6P) * * HY 0801 EE-8.3 (6P) HY 0802 (12P) HY 0803 HY 0901 RM-8-1 (12P) UU-9.8 (4P) HY 1007 HY 1201
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A5034
56A/B
RM-1202P)
EE-13
EP-13
EP-13-1
EE-13-1
EE-13-2
EP-13-3
EP-13-2
HY1906
erl-35c
HY 1906
ERL-35-2
HY1506
EE-19 N
Erl-39
HY3506
HY1001
ERL-35
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