EI-30
Abstract: EI - 33
Text: Data sheet E 7.204 - 29497 0,5 / 1/ 1,2 1,8 / 2,5 3,2 5 TMS mains transformers These transformers are potted in a case to be mounted on a PCB. Potting gives a high isolation and good aging. Pins are on a standard 5 mm pitch. TMS 0,5 / 1 / 1,2 / 1,8 / 2,5 TMS 3,2
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compou200
EI-30
EI - 33
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PDF
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EI-30
Abstract: EI - 33 EI -40C
Text: TMS Vishay Aztronic Mains Transformers FEATURES • Potted in a case to be mounted on a PCB • Potting gives a high isolation and good aging • Pins are on a standard 5mm pitch DIMENSIONS in millimeters TMS 0.5 / 1 / 1.2 / 1.8 / 2.5 TMS 5 TMS 3.2 32 44.1
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16-Jul-02
EI-30
EI - 33
EI -40C
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PDF
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SF00181
Abstract: 4Z145
Text: Philips Semiconductors FAST Products Product specification 8-input priority encoder 74F148 FEATURES PIN CONFIGURATION • Code conversions • Multi-channel D/A converter • Decimal-to-BCD converter • Cascading for priority encoding of “N” bits • Input enable capability
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74F148
74F148
500ns
SF00006
SF00181
4Z145
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PDF
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priority encoder
Abstract: 74F148 N74F148D N74F148N
Text: INTEGRATED CIRCUITS 74F148 8-input priority encoder Product specification IC15 Data Handbook Philips Semiconductors 1990 Mar 01 Philips Semiconductors Product specification 8-input priority encoder 74F148 FEATURES PIN CONFIGURATION • Code conversions • Multi-channel D/A converter
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74F148
priority encoder
74F148
N74F148D
N74F148N
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PDF
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240-PIN
Abstract: DDR2-667 PC2-5300 SN13 ps3109
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
DDR2-667
PC2-5300
SN13
ps3109
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL395T5160A-E6M REV: 1.1 General Information 4GB 512Mx72 DDR2 SDRAM ECC FULLY BUFFERED DIMM FBDIMM 240-PIN Description The VL395T5160A is a 512Mx72 DDR2 SDRAM high density Fully buffered DIMM (FBDIMM). This memory module
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Original
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VL395T5160A-E6M
512Mx72
240-PIN
VL395T5160A
256Mx4
240-pin
VN-281009
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PDF
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AL sn11
Abstract: 240-PIN 64MX8 850C PC2-5300 samsung pc2-5300
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
AL sn11
850C
PC2-5300
samsung pc2-5300
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,
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Original
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VL395T2953-E6/D5
128Mx72
VL395T2953
64MX8
240-pin
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PDF
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ddr2 667
Abstract: SA1137 trace code micron label MT9HTF12872F
Text: Preliminary‡ 240-Pin 512MB, 1GB DDR2 SDRAM FBDIMM SR, FB, x72 Features DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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Original
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240-Pin
512MB,
MT9HTF6472F
512MB
MT9HTF12872F
PC2-4200
PC2-5300
10-pair
14-pair
ddr2 667
SA1137
trace code micron label
MT9HTF12872F
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
667Mbps/533Mbps
M01E0107
E1009E20
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PDF
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DDR2-667
Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AJFT
512MB
240-pin
655-ball
75V/-0
667Mbps
M01E0107
E1087E20
DDR2-667
EDE5108AJSE-6E-E
EBE51FD8AJFT
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PDF
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PC2-4200
Abstract: EDE5108AGSE-6E-E DDR2-533 DDR2-667 EBE51FD8AGFD EBE51FD8AGFN
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AGFD
EBE51FD8AGFN
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0869E30
PC2-4200
EDE5108AGSE-6E-E
DDR2-533
DDR2-667
EBE51FD8AGFD
EBE51FD8AGFN
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PDF
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DDR2-533
Abstract: DDR2-667
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1009E30
DDR2-533
DDR2-667
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PDF
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PC2-5300J-555-10-C
Abstract: trace code micron label
Text: Preliminary‡ 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTS51272F – 4GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory module (FBDIMM) with ECC to detect and report
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Original
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240-Pin
MT36HTS51272F
PC2-4200
PC2-5300
10-pair
14-pair
09005aef822148b0/source:
09005aef82214898
HTS36C512x72F
PC2-5300J-555-10-C
trace code micron label
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PDF
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Z87000
Abstract: Z87010 Z87L10 DSA0011674
Text: PRELIMINARY PRODUCT SPECIFICATION 2 Z87010/Z87L10 2 AUDIO ENCODER/DECODERS FEATURES • Direct Interface to 8-Bit µ-law Telephone CODEC ■ I/O Bus 16-Bit Tristable Data, 3-Bit Address ■ Wait State Generator ■ Two External Interrupts Hardware ■ Four Separate I/O Pins (2 Input, 2 Output)
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Z87010/Z87L10
16-Bit
Z87L10
Z87010
Z87000
44-Pin
Z87000
Z87010
Z87L10
DSA0011674
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PDF
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PS3 power supply
Abstract: DDR2 qimonda
Text: STEC Part Number: INT72W4M256M8M-A03GZU 256M X 72 Bit 2GB 240-Pin DDR2 FB-DIMM ECC (PC2-5300) 2 Rank x 4; RoHS Compliant , Lead-Free GENERAL DESCRIPTION The INT72W4M256M8M-A03GZU is a 256M x 72 bit (2GB) 240-pin Double Data Rate 2 (DDR2) Fully-Buffered Dual Inline Memory Module (FB-DIMM) with ECC.
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INT72W4M256M8M-A03GZU
240-Pin
PC2-5300)
INT72W4M256M8M-A03GZU
PS3 power supply
DDR2 qimonda
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PDF
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MT18HTF12872FD
Abstract: No abstract text available
Text: Preliminary‡ 240-Pin 1GB, 2GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT18HTF12872FD – 1GB MT18HTF25672FD – 2GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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240-Pin
MT18HTF12872FD
MT18HTF25672FD
PC2-4200
PC2-5300
10-pair
14-pair
09005aef81a2f20c/Source:
09005aef81a2f25b
MT18HTF12872FD
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PDF
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SN5158
Abstract: No abstract text available
Text: DATA SHEET 1GB Fully Buffered DIMM EBE10FE8ACFR Specifications Features • Density: 1GB • Organization 128M words x 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE10FE8ACFR
240-pin
655-ball
667Mbps
M01E0706
E1346E10
SN5158
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PDF
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DDR2-533
Abstract: DDR2-667 E0931E20
Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ABHD Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package 240-pin fully buffered, socket type dual in line
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EBE41FE4ABHD
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0931E20
DDR2-533
DDR2-667
E0931E20
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PDF
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EBE21FD4AGFD-5C-E
Abstract: DDR2-533 DDR2-667 IBIST test Function ebe21fd4agfn-6e-e elpida DDR2 routing
Text: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FD4AGFD
EBE21FD4AGFN
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0868E30
EBE21FD4AGFD-5C-E
DDR2-533
DDR2-667
IBIST test Function
ebe21fd4agfn-6e-e
elpida DDR2 routing
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PDF
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DDR2-667
Abstract: No abstract text available
Text: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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Original
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EBE41FE4ACFR
240-pin
655-ball
667Mbps
M01E0706
E1344E20
DDR2-667
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PDF
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1024M
Abstract: DDR2-667
Text: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE81FF4ABHR Specifications Features • Density: 8GB • Organization 1024M words x 72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with sFBGA • Package 240-pin fully buffered, socket type dual in line
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EBE81FF4ABHR
1024M
240-pin
655-ball
667Mbps
M01E0706
E1431E10
DDR2-667
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PDF
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Untitled
Abstract: No abstract text available
Text: M aiey w tK : SLW a NO. PINS PER ROW D O’i B B Ul W PLATING OPTION P i ROW OPTION Specifications: SLW Same as CES Series except: Contact Material: Phosphor Bronze Insertion Depth: 2.16mm .085" to (2,92mm) . ’ '5 " Insertion Force: (3.34N) 12oi avg (0,64mm) .025" SQ pin
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OCR Scan
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800-SAMTEC-9
10i8141
37T65-0-
rO-8141
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PDF
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Untitled
Abstract: No abstract text available
Text: !i Dimension and pin-connection Top view display side | | Emitting Colour Tvnp V a k n m Material i FOUR DIGIT CLOCK DISPLAYS -6 .2 mm Lumi ro u s Intensity (/f= = 10 mA) ucd min. ' max. Description C A 2 5 -1 1 HW A Common Anode 240 900 C C 2 5 -1 1 HW A
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OCR Scan
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PDF
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