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    EIA1 Price and Stock

    KEMET Corporation LDEIA1100KA0N00

    CAP FILM 1000PF 10% 250VDC 1206
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    DigiKey LDEIA1100KA0N00 Cut Tape 10,023 1
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    Advantech Co Ltd EI-A100-S61A1

    SBC 1 CORE 16GB/0GB RAM
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    DigiKey EI-A100-S61A1 Bulk 1
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    Newark EI-A100-S61A1 Bulk 1
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    KEMET Corporation LDEIA1120MA0N00

    CAP FILM SMD PEN
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    KEMET Corporation LDEIA1220KA0N00

    CAP FILM SMD PEN
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    DigiKey LDEIA1220KA0N00 Reel 3,000
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    KEMET Corporation LDEIA1150KA0N00

    CAP FILM SMD PEN
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    Find more EIA1 price and stock on Findchips.com

    EIA1 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EIA1011-2P Excelics Semiconductor 10.7-11.7GHz, 2W internally matched power FET Original PDF
    EIA1011-4P Excelics Semiconductor 10.7-11.7GHz, 4W internally matched power FET Original PDF
    EIA1111-2 Excelics Semiconductor Internally Matched Power IMFETs Original PDF
    EIA1111-6 Excelics Semiconductor Internally Matched Power IMFETs Original PDF
    EIA1111-6 Excelics Semiconductor Internally Matched Power IMFETs Original PDF
    EIA1114-2 Excelics Semiconductor Internally Matched Power IMFETs Original PDF
    EIA1114-4 Excelics Semiconductor Internally Matched Power IMFETs Original PDF
    EIA1213-2P Excelics Semiconductor FET Misc, 12.75-13.25GHz, 2W Internally Matched Power FET Original PDF
    EIA1213-2P Excelics Semiconductor 12.75-13.25GHz, 2W internally matched power FET Original PDF
    EIA1213-4P Excelics Semiconductor 12.75-13.25GHz, 4W internally matched power FET Original PDF
    EIA1213-4P Excelics Semiconductor FET Misc, 12.75-13.25GHz, 4W Internally Matched Power FET Original PDF
    EIA1314-2P Excelics Semiconductor 13.75-14.5GHz, 2W internally matched power FET Original PDF
    EIA1314-4P Excelics Semiconductor 13.75-14.5GHz, 4W internally matched power FET Original PDF
    EIA1314-8P Excelics Semiconductor 13.75-14.5GHz, 8W Internally Matched Power FET Original PDF
    EIA1314A-2P Excelics Semiconductor 13.0-14.5GHz, 2W internally matched power FET Original PDF
    EIA1314A-4P Excelics Semiconductor 13.0-14.5GHz, 4W internally matched power FET Original PDF
    EIA1314A-8P Excelics Semiconductor 13.0-14.5GHz, 8W Internally Matched Power FET Original PDF
    EIA1414-2P Excelics Semiconductor 14.0-14.5GHz, 2W internally matched power FET Original PDF
    EIA1414-4P Excelics Semiconductor 14.0-14.5GHz, 4W internally matched power FET Original PDF
    EIA1414-6 Excelics Semiconductor Internally Matched Power IMFETs Original PDF

    EIA1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent transistor PT 3500

    Abstract: EIA1111-6
    Text: EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 12/06/2005 .060 MIN. FEATURES • • • • • • .650±.008 .512 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression


    Original     		PDF EIA1111-6 1600mA equivalent transistor PT 3500 EIA1111-6

    EIA1415-8P

    Abstract: 7371711
    Text: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF EIA1415-8P 35GHz, 35GHz 39dBm 35GHz 6240mA 720mA 120mA EIA1415-8P 7371711

    EIA1111-2

    Abstract: No abstract text available
    Text: EIA1111-2 11.0-11.5 GHz 2-Watt Internally Matched Power FET UPDATED 02/17/2006 .060 MIN. FEATURES • • • • • • .650±.008 .512 ∆G PAE SN .004 IDSS Saturated Drain Current VP Pinch-off Voltage RTH .070 ±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device.


    Original     		PDF EIA1111-2 800mA EIA1111-2

    Untitled

    Abstract: No abstract text available
    Text: Excelics EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF 35GHz EIA1415A-4P 35GHz, EIA1415-4P 360mA 35dBm

    EIA1616-8P-2

    Abstract: No abstract text available
    Text: EIA1616-8P-2 16.2-16.4GHz 8-Watt Internally Matched Power FET UPDATED 11/09/06 FEATURES • • • • • • • 16.2– 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression


    Original     		PDF EIA1616-8P-2 2200mA EIA1616-8P-2

    Untitled

    Abstract: No abstract text available
    Text: EIA1415-5 14.40-15.35GHz 5-Watt Internally Matched Power FET UPDATED 11/17/2006 FEATURES • • • • • • • 14.40– 15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression


    Original     		PDF EIA1415-5 35GHz

    EIA1415-2P

    Abstract: EIA1415A-2P
    Text: Excelics EIA1415A-2P 14.0-15.35 GHz: 2Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +33.0 TYPICAL P1dB OUTPUT POWER 7.5dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1415A-2P 35GHz EIA1415-2P Dra25OC 180mA 32dBm 175oC EIA1415-2P EIA1415A-2P

    EIA1314A-4P

    Abstract: No abstract text available
    Text: Excelics EIA1314A-4P 13.0-14.5 GHz: 4Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER 8.5dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1314A-4P 3120mA 360mA 35dBm 175oC 150oC -65/150oC EIA1314A-4P

    EIA1616-4P

    Abstract: No abstract text available
    Text: Excelics EIA1616-4P PRELIMINARY DATA SHEET 16.2-16.4GHz, 4W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1616-4P 36dBm 1760ATINGS 3120mA 360mA 35dBm 175oC 150oC -65/175oC EIA1616-4P

    EIA1114-2

    Abstract: No abstract text available
    Text: EIA1114-2 11.0-14.0GHz 2-Watt Internally Matched Power FET UPDATED 07/25/2006 FEATURES • • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression


    Original     		PDF EIA1114-2 EIA1114-2

    EIA1414-6

    Abstract: 28MA3
    Text: EIA1414-6 14.00-14.50 GHz 6-Watt Internally Matched Power FET UPDATED 12/5/2005 FEATURES • • • • • • .060 MIN. 14.00– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression


    Original     		PDF EIA1414-6 50GHz 50GHz 1600mA EIA1414-6 28MA3

    EIA1314A-8P

    Abstract: No abstract text available
    Text: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF EIA1314A-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/175oC EIA1314A-8P

    EIA1210

    Abstract: EIA1206 AMK212BJ476MG AMK316BJ107ML EIA0402 EIA0805 EIA-0805
    Text: June 30, 2005 Taiyo Yuden: Mass Production of World's First 100µF Multilayer Ceramic Capacitor in EIA1206 Size Fusion of Sub-Micrometer Thin-Layer Technology with 600-Plus Multilayer Technology Taiyo Yuden will commence mass production in July 2005 of a 100µF compact, high-capacitance


    Original     		PDF EIA1206 600-Plus EIA0805 AMK316BJ107ML AMK212BJ476MG EIA1210 AMK212BJ476MG AMK316BJ107ML EIA0402 EIA-0805

    Au Sn eutectic

    Abstract: EIA1415-4P EIA1415A-4P 3120MA
    Text: Excelics EIA1415A-4P 14.0-15.35 GHz: 4Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER 7/6dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1415A-4P 35GHz EIA1415-4P 3120mA 360mA 35dBm 175oC Au Sn eutectic EIA1415-4P EIA1415A-4P 3120MA

    EIA1314A-2P

    Abstract: No abstract text available
    Text: Excelics EIA1314A-2P 13.0-14.5 GHz: 2Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 30% TYPICAL 33.0dBm TYPICAL P1dB OUTPUT POWER 9dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1314A-2P Curre25OC 180mA 32dBm 175oC 150oC -65/150oC EIA1314A-2P

    BS9075

    Abstract: BS9075 F002 CECC 30-701
    Text: Cased Radial Capacitors Approved to CECC 30601 - 009 and BS9075 N0023 & F0002 ORDERING CODE VK20 B A 101 J B CECC R TR Style Temperature range -55ºC + 125ºC Dielectric (A=NPO) Capacitance according to EIA1 Tolerance according to EIA Rated Voltage A=50/63V B=100V C=200V


    Original     		PDF BS9075 N0023 F0002 50/63V ACC086 BS9075 F002 CECC 30-701

    EIA1111-6

    Abstract: No abstract text available
    Text: EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 11/15/2005 Excelics FEATURES • • • • • • .024 EIA1111-6 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression


    Original     		PDF EIA1111-6 EIA1111-6

    EIA1616-8P-2

    Abstract: No abstract text available
    Text: EIA1616-8P-2 16.20-16.40 GHz, 8-Watt Internally-Matched Power FET ISSUED DATE: 03-22-2004 FEATURES • • • • • • EIA1616-8P-2 16.20-16.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression


    Original     		PDF EIA1616-8P-2 40GHz EIA1616-8P-2

    Untitled

    Abstract: No abstract text available
    Text: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF 39dBm EIA1616-8P EIA1616-8P 720mA 38dBm 175oC -65/175oC 6240mA 120mA 150oC

    Untitled

    Abstract: No abstract text available
    Text: Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF EIA1314A-4P EIA1314A-4P 360mA 35dBm 175oC -65/175oC 3120mA 150oC -65/150oC

    EIA1414-8P

    Abstract: No abstract text available
    Text: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF EIA1414-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/150oC EIA1414-8P

    EIA1616-8P

    Abstract: No abstract text available
    Text: Excelics EIA1616-8P PRELIMINARY DATA SHEET 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1616-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/150oC EIA1616-8P

    EIA1415B-8P

    Abstract: IDSS
    Text: Excelics EIA1415B-8P 14.9-15.1 GHz: 8Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN


    Original     		PDF EIA1415B-8P 39dBm 6240mA 720mA 120mA 38dBm 175oC 150oC -65/150oC EIA1415B-8P IDSS

    Untitled

    Abstract: No abstract text available
    Text: Excelics EIA1415B-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.9-15.1GHz, 8W Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER


    Original     		PDF 39dBm EIA1415B-8P EIA1415B-8P 720mA 38dBm 175oC -65/175oC 6240mA 120mA 150oC