AT88SC1604
Abstract: AT88SC1608 AT88SC1601 09CT Module Size AT88SC101 AT88SC102 AT88SC153 AT45DB021 at24c02 AT24C32
Text: Secure Memories in Standard Packages Ordering Code: 10SC Ordering Code: 10WC 8S1, 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline JEDEC SOIC Products: AT88SC153 8S2, 8-lead, 0.210" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) Products: AT88SC1608, AT88SC153
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AT88SC153
AT88SC1608,
AT45D021
AT45DB021
AT45D041
AT45DB041
AT88SC1608
AT88SC1604
AT88SC1608
AT88SC1601
09CT Module Size
AT88SC101
AT88SC102
AT88SC153
AT45DB021
at24c02
AT24C32
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CERAMIC LEADLESS CHIP CARRIER
Abstract: 44-PIN ceramic pin grid array package
Text: Packaging Information 8-LEAD PLASTIC, 0.200” WIDE SMALL OUTLINE GULLWING PACKAGE TYP “A” EIAJ SOIC 0.020 (.508) 0.012 (.305) .213 (5.41) .205 (5.21) .330 (8.38) .300 (7.62) PIN 1 ID .050 (1.27) BSC .212 (5.38) .203 (5.16) .080 (2.03) .070 (1.78) .013 (.330)
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8S2 EIAJ SOIC
Abstract: EIAJ SOIC 8 atmel 838 atmel 538 Package Dimensions EIAJ SOIC 8 8S2 8-lead 03 transistor eiaj soic EIAJ 8 pin
Text: Package Drawing 8S2, 8-Lead, 0.210" Wide, Plastic Gull Wing Small Outline EIAJ SOIC Dimensions in Inches and (Millimeters) .020 (.508) .012 (.305) .213 (5.41) .205 (5.21) PIN 1 .330 (8.38) .300 (7.62) .050 (1.27) BSC .212 (5.38) .203 (5.16) .080 (2.03) .070 (1.78)
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC EIAJ CASE 751J–02 ISSUE A DATE 06/30/1993 SCALE 1:1 –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC EIAJ CASE 967–01 ISSUE O DATE 01/19/1990 SCALE 2:1 20 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED
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cm8870 dtmf decoder
Abstract: CM8870 IC DTMF cm8870 DTMF Receiver DIP-18 CM8870 DECODING IC EACH PIN EXPLANATION
Text: CM8870/70C CALIFORNIA MICRO DEVICES CMOS INTEGRATED DTMF RECEIVER Features Full DTMF receiver Less than 35mW power consumption Industrial temperature range Uses quartz crystal or ceramic resonators Adjustable acquisition and release times 18-pin DIP, 18-pin DIP EIAJ, 18-pin SOIC, 20-pin PLCC
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CM8870/70C
18-pin
20-pin
CM8870C
CM8870C
CM8870
CM8870/70C
cm8870 dtmf decoder
CM8870 IC
DTMF cm8870
DTMF Receiver DIP-18
CM8870 DECODING IC EACH PIN EXPLANATION
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CM8870
Abstract: cm8870 dtmf decoder cm8870 dtmf decoder circuit diagram CM8870 IC cm8870 dtmf decoder ic pin diagram of CM8870 DTMF cm8870 CM8870 SOIC-18
Text: CM8870/70C CALIFORNIA MICRO DEVICES CMOS INTEGRATED DTMF RECEIVER Features Full DTMF receiver Less than 35mW power consumption Industrial temperature range Uses quartz crystal or ceramic resonators Adjustable acquisition and release times 18-pin DIP, 18-pin DIP EIAJ, 18-pin SOIC, 20-pin PLCC
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CM8870/70C
18-pin
20-pin
CM8870C
CM8870C
CM8870
CM8870/70C
cm8870 dtmf decoder
cm8870 dtmf decoder circuit diagram
CM8870 IC
cm8870 dtmf decoder ic
pin diagram of CM8870
DTMF cm8870
CM8870 SOIC-18
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EIA and EIAJ tape standards
Abstract: EIA-481-3 EIA-481-1A Package Dimensions EIAJ SOIC 8 XICOR DATE CODE EIA and EIAJ standards EIA and EIAJ standards for marking mark code t4 diode 56mm carrier tape EIA-481-1A tsop
Text: TAPE AND REEL REFERENCE GUIDE TABLE OF CONTENTS Section Page 1.0 Purpose 1 2.0 Scope 1 3.0 Requirements 2-3 Figure One: Embossed Carrier Dimensions for SOIC 8mm & 12mm tapes Embossed Tapes Only 4 Table One: Embossed Carrier Tape Dimensions for 8mm & 12mm tapes Embossed Tapes Only
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8S2 EIAJ SOIC
Abstract: AT24C512BN-SH25-B AT24C512BN-SH-B AT24C512BN-SH-T AT24C512B-PU AT24C512BW-SH-B AT24C512B AT24C512BN-SH25-T AT24C512B-PU25 AT24C512BW-SH-T
Text: Features • Low-voltage and Standard-voltage Operation • • • • • • • • • • • • – 1.8v VCC = 1.8V to 3.6V – 2.5v (VCC = 2.5V to 5.5V) Internally Organized 65,536 x 8 Two-wire Serial Interface Schmitt Triggers, Filtered Inputs for Noise Suppression
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128-byte
MS-012,
AT24C512B
8S2 EIAJ SOIC
AT24C512BN-SH25-B
AT24C512BN-SH-B
AT24C512BN-SH-T
AT24C512B-PU
AT24C512BW-SH-B
AT24C512B
AT24C512BN-SH25-T
AT24C512B-PU25
AT24C512BW-SH-T
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MP7523JN
Abstract: MP7523KN MP7523 MP7523JS MP7523KS XRD7523AID-J XRD7523AID-K
Text: MP7523/XRD7523 15 V CMOS Multiplying 8-Bit Digital-to-Analog Converter .the analog plus company TM January 1996-2 FEATURES APPLICATIONS • • • • • • • • • • • • • Full Four-Quadrant Multiplying Low Feedthrough: 1/2 LSB @ 200 kHz
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MP7523/XRD7523
MP7524/XRD7524
MP7523/XRD7523
MP7523JN
MP7523KN
MP7523
MP7523JS
MP7523KS
XRD7523AID-J
XRD7523AID-K
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Untitled
Abstract: No abstract text available
Text: FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM24W256
256Kb
FM24W256
256-kilobit
FM24W256,
FM24W256-EG
A00002G1
RIC1037
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AT93C46
Abstract: 8S2 EIAJ SOIC AT93C56 AT93C57 AT93C66
Text: Features • Low Voltage and Standard Voltage Operation • • • • • • • – 5.0 VCC = 4.5V to 5.5V – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) User Selectable Internal Organization – 1K: 128 x 8 or 64 x 16
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fm24w256-eg
Abstract: up board 10th 2012 FM24W256-G
Text: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM24W256
256Kb
FM24W256
256-kilobit
FM24W256,
FM24W256-EG
A00002G1
RIC1037
up board 10th 2012
FM24W256-G
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FM24W256
Abstract: No abstract text available
Text: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM24W256
256Kb
FM24W256
256-kilobit
FM24W256,
FM24W256-EG
A00002G1
RIC1037
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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FM24W256
256Kb
FM24W256,
FM24W256-EG
A00002G1
RIC1037
FM24W256
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Untitled
Abstract: No abstract text available
Text: MC74AC04, MC74ACT04 Hex Inverter • Outputs Source/Sink 24 mA • ′ACT04 Has TTL Compatible Inputs VCC 14 http://onsemi.com 13 12 11 10 9 8 PDIP–14 N SUFFIX CASE 646 14 1 1 2 3 4 5 6 7 SO–14 D SUFFIX CASE 751A 14 GND 1 Figure 1. Pinout: 14–Lead Packages Conductors
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MC74AC04,
MC74ACT04
ACT04
74ACT
MC74ACT04
MC74AC04N
74AC04
MC74ACT04N
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Untitled
Abstract: No abstract text available
Text: MC74AC11, MC74ACT11 Triple 3-Input AND Gate • Outputs Source/Sink 24 mA • ′ACT11 Has TTL Compatible Inputs VCC 14 http://onsemi.com 13 12 11 10 9 8 PDIP−14 N SUFFIX CASE 646 14 1 1 2 3 4 5 6 7 SO−14 D SUFFIX CASE 751A 14 1 GND Figure 1. Pinout: 14−Lead Packages Conductors
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MC74AC11,
MC74ACT11
ACT11
PDIP-14
SO-14
14-Lead
TSSOP-14
EIAJ-14
74ACT
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Untitled
Abstract: No abstract text available
Text: MC74AC04, MC74ACT04 Hex Inverter • Outputs Source/Sink 24 mA • ′ACT04 Has TTL Compatible Inputs VCC 14 http://onsemi.com 13 12 11 10 9 8 PDIP–14 N SUFFIX CASE 646 14 1 1 2 3 4 5 6 7 SO–14 D SUFFIX CASE 751A 14 GND 1 Figure 1. Pinout: 14–Lead Packages Conductors
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MC74AC04,
MC74ACT04
ACT04
74ACT
MC74ACT04
MC74AC04N
74AC04
MC74ACT04N
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Untitled
Abstract: No abstract text available
Text: MC74AC20, MC74ACT20 Dual 4-Input NAND Gate • Outputs Source/Sink 24 mA • ′ACT20 Has TTL Compatible Inputs VCC A1 B1 NC C1 D1 O1 14 13 12 11 10 9 8 http://onsemi.com PDIP–14 N SUFFIX CASE 646 14 1 1 2 3 4 5 6 7 A0 B0 NC C0 D0 O0 GND SO–14 D SUFFIX
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MC74AC20,
MC74ACT20
ACT20
14-Lead
74ACT
MC74ACT20
MC74AC20N
74AC20
MC74ACT20N
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AT93c57
Abstract: AT93C46 8S2 EIAJ SOIC AT93C56 AT93C66
Text: Features • Low Voltage and Standard Voltage Operation • • • • • • • – 5.0 VCC = 4.5V to 5.5V – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) User Selectable Internal Organization – 1K: 128 x 8 or 64 x 16
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16ssumes
0172K
07/98/xM
AT93c57
AT93C46
8S2 EIAJ SOIC
AT93C56
AT93C66
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74LVQ245
Abstract: 74LVQ245QSC 74LVQ245SC 74LVQ245SCX 74LVQ245SJ 74LVQ245SJX LVQ245
Text: LVQ245 National Semiconductor 74LVQ245 Low Voltage Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features Ideal for low power/low noise 3.3V applications Implements patented Quiet Series EMI reduction circuitry Available in SOIC JEDEC, SOIC EIAJ and QSOP
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74LVQ245
LVQ245
b501122
74LVQ245
74LVQ245QSC
74LVQ245SC
74LVQ245SCX
74LVQ245SJ
74LVQ245SJX
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Ordering Information Device Nomenclature MC M otorola C ircuit Identifier 74 LCX YYYY - P ackage Type • D • 74 = - 4 0 to +85 C • M = Plastic EIAJ SOIC • SD = Plastic SSOP • DT = Plastic TSSO P
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BR1339
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R Low 74LVQ573 L o w V o l t a g e O c t a l L a t c h wi th 3 - S T A T E O u t p u t s • Ideal to r low pow er/low noise 3 .3 V applications ■ Im plem ents patented EMI reduction circuitry ■ A vailable in SOIC JED EC , SOIC EIAJ, and QSOP
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74LVQ573
74LVQ573
LVQ573
LVQ373
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MP7523JN
Abstract: D7523 mp7524 hp5082 MP7523 MP7523JS MP7523KN MP7523KS XRD7523AID-J 18soic
Text: MP7523/XRD7523 IB T E X A R 15 V CMOS Multiplying 8-Bit Digital-to-Analog Converter .the analog plus com pany January 1996-2 FEATURES • • • • • • • APPLICATIONS Full Four-Quadrant Multiplying Low Feedthrough: 1/2 LSB @ 200 kHz Fast Settling: 100ns typ.
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P7523/XR
D7523
MP7524/XRD7524
MP7523/XRD7523
3425t
3122falfl
MP7523JN
D7523
mp7524
hp5082
MP7523
MP7523JS
MP7523KN
MP7523KS
XRD7523AID-J
18soic
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