Untitled
Abstract: No abstract text available
Text: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design
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ESAD25
SC-65
ESAD25C
ESAD25-
et-02
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ne 545 d
Abstract: ESAD92M-02R T1012 esaD92 20H14
Text: ESAD92M-02R 20A Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching 3.2 +0.3 20 Min 1.6 ±0.3 5.45 ±0.2 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.5 ø3.2 ±0.2 9.3 ±0.3
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ESAD92M-02R
ne 545 d
ESAD92M-02R
T1012
esaD92
20H14
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ne 545 d
Abstract: ESAD92M-03R PR 200 20h100
Text: ESAD92M-03R 20A Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching 3.2 +0.3 20 Min 1.6 ±0.3 5.45 ±0.2 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.5 ø3.2 ±0.2 9.3 ±0.3
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ESAD92M-03R
ne 545 d
ESAD92M-03R
PR 200
20h100
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HRW0202A
Abstract: SC-59A Hitachi DSA00304
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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HRW0202A
ADE-208-209E
HRW0202A
SC-59A
Hitachi DSA00304
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HRW0202B
Abstract: SC-59A ADE-208-345A
Text: HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A Z Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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HRW0202B
ADE-208-345A
HRW0202B
SC-59A
ADE-208-345A
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a473
Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Text: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram
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ESAC87-009I16A)
SC-65
500ns,
ESAC87-009
a473
MA020
A-473
SC-65
esac87
CC180
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Schottky Diode SC-62
Abstract: SE069
Text: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.
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SE069
0QD1754
SC-62
500ns
0DG17SL,
Schottky Diode SC-62
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SE046
Abstract: sin wave to square 15X15 oc sc62
Text: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •
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SE046
D00174fl
SC-62
500ns
52Bfl7TS
017SD
15X15
sin wave to square
15X15
oc sc62
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Collmer SC
Abstract: SE059 Schottky Diode SC-62 Collmer Semiconductor
Text: COLLMER SEMICONDUCTOR INC MAE ]> 2B3A715 0001751 &7B * C 0 L SE059 1 .OA _ " p 0 3 - \ 3 Outline Drawings SC H O TTK Y BARRIER D IO D E 16 MAX, 4.6 MAX. 18 MAX. PU >i 1— I 0.48 MAX. 0.55 MAXvJ-U 0.44 MAX. 15 L5 3.0 • Features • S urface m o u n t device
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SE059
T-03-\3
SC-62
500ns
S91JJ
G001753
Collmer SC
Schottky Diode SC-62
Collmer Semiconductor
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a473
Abstract: A472 A-473 ESAC87-009 SC-65
Text: ESAC87-009H6A i Outline Drawings SCH O TTKY BARRIER DIODE ^3.2±o ' 15 . 5 maj 13.0 , r" i 5iC * H JU -2.0 / ! T.Zto 1 ' S f- m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram
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ESAC87-009I16A)
SC-65
500ns,
ESAC87-009
a473
A472
A-473
SC-65
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1210D1
Abstract: 20FWJ2C48M U20FWJ2C48M
Text: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM—0.47V • Repetitive Peak Reverse Voltage
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20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
1210D1
U20FWJ2C48M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : V pM= 0.47V • Repetitive Peak Reverse Voltage
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20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
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CMS04
Abstract: E80-20 C367C 367C
Text: TOSHIBA CMS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS04 Switching Mode Power Supply Applications Portable Equipment Battery Applications U nit.m m Forward voltage: VFM = 0.37 V max Average forward current: Ip (,\y) = 5.0 A Repetitive peak reverse voltage: V rrm = 30 V
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CMS04
CMS04
E80-20
C367C
367C
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single phase full bridge inverter
Abstract: K2-SS
Text: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O
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20L6P45
60sec.
60sec)
single phase full bridge inverter
K2-SS
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage
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20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
J2C48M
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T460
Abstract: ESAD25M H150 T151 T930
Text: ESAD25M C,N,D (15A) IW üH ’î i : Outline Drawings FAST RECOVERY DIODE * Features _0£ Insulated package by fully molding. JEDEC EIAJ High voltage by mesa design. High reliability Connection Diagram : Applications o ESAD25M-DDC ®o— ►! I |4 .-»a
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ESAD25M
ESAD25M-DDC
ESAD25M-DDN
ESAD25M-GDD
I95t/R89)
Shl50
T460
H150
T151
T930
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ESAE83-004
Abstract: P460 SC-65 T151 T760
Text: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design
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ESAE83-004I60A)
SC-65
500ns
l95t/R89
ESAE83-004
P460
SC-65
T151
T760
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48, SF10J48, USF10G48, USF10J48 M EDIUM PO W ER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF10G48
SF10J48
USF10G48
USF10J48
SF10G48,
SF10J48,
USF10G48,
SF10G48-SF10J48
USF10G48-USF10J48
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pfwe8
Abstract: CXA1019 CXA1019AM CXA1019AS 21K7H5 SFU-455B 1019AM 7MC-7789N K2796 7TRS-8441X
Text: SONY C X A 1019 AM/AS iF f f r t h e availability m a n iK iM iu tL iL H w C X A 1019A M / A SJá, ^ alease c o n tact t — sa-— o f-—-H K7 b ix m ïz n tz F M / AM I f - y ^ I C - C T E ^ Ä ^ ^ L T V ^ t o FMnIS • R F T > 7\ MIX, OSC A F C ffl^ V * -V 7 7 ° M
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CXA1019AM/AS
CXA1019AM/ASii,
CXA1019AM
CXA1019AS
1019AM)
CXA1019AS)
Ta-25Â
108MHz)
SFU-455B
pfwe8
CXA1019
CXA1019AM
21K7H5
1019AM
7MC-7789N
K2796
7TRS-8441X
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diode BAS16 PINNING FEATURES DESCRIPTION • Sm all plastic SM D package The B A S 16 is a high-speed sw itching diode fabricated in planar technology, and encapsulated in a sm all S O T23 plastic SM D package.
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BAS16
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching • High switching speed: max. 4 ns diode fabricated in planar technology, and encapsulated in the small SOT23
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BAL99
BAL99
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION • Sm all plastic SM D package The P M B D 6100 consists of tw o high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated
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PMBD6100
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SMD MARKING CODE LP SOT-323
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed double diode BAV70W PINNING FEATURES DESCRIPTION • V ery sm all plastic SM D package The B A V 70W consists of two high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated
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BAV70W
OT323
SC-70
SMD MARKING CODE LP SOT-323
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smd a4t
Abstract: A4T SOT23 A4t+29+smd
Text: Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION • Sm all plastic SM D package The BAV 70 consists of two high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated
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BAV70
MAM383
smd a4t
A4T SOT23
A4t+29+smd
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