Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

ISS226

Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Contextual Info: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: CONVERSION CHART I INCH MM .002 0,05 .010 0.25 .020 0.51 .030 0.76 SPECIFICATIONS: I » X t O • 1 — < •—i • => 1.09 o o .020 12X < .100 2,54 .130 3.30 .172 4,37 .187 4,75 .200 5,08 .210 5,33 .216 5,49 .340 ELECTRICAL' CONTACT RATING: 0.4 VA a 20 VDC OR PEAK AC

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

modular jack RJ45 8P8C

Contextual Info: 3 .2 5 + 0 .2 5 if C\l 1 6 .1 5 + 0 .2 5 LED 1 CN LED 2 i 0 .5 0 o o O O m • _l o _l o CL ro CL CN MAX. O +l lO O +l CL lO CO m D CN o ELECTRICAL CIRCUIT lO 0 3 .2 0 +l t AMP LOGO RED/GREEN COLOR LED 00 ro i Q_ >- CL o i i\ CÛ □ t i 1 o lO i ro CL o

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

Contextual Info: KV 1 8 4 5 E S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2 . TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE 5 . PACKAGE OUTLINE 6. PIN LAYOUT SIG N ATU RE DATE 7 . PACKAGE OUTLINE DIM ENSIONS/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: MCT2, MCT2E OPTOCOUPLERS D 2 7 3 1 , MARCH 1 9 8 3 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High-Voltage Electrical Isolation or 3 .5 5 -k V Rating 1.5 -kV

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

1N5614 JANTX

Contextual Info: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)

Contextual Info: TOSHIBA TLOU262,TLSU262,TLYU262 TENTATIVE TOSHIBA InGaAfP LED TLOU262, TLSU262, TLYU262 PANEL CIRCUIT INDICATOR • • • • • • • InGaA£P LED All Plastic Mold Type Colorless Clear Lens Lineup : 3 Colors Red, Orange, Yellow Suitable for High-Brightness and Less Electricity

thyristor st 103

Abstract: SH30J13A L13A SH30J TOSHIBA THYRISTOR SH30F SH30F13A
Contextual Info: SH3 KD,F,G,H,J,L 13A HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE HIGH SPEED (FORKLIFT, ELECTRIC-CAR, CHOPPER, INVERTER) APPLICATIONS. Unit in m m FEATURES: . Repetitive Peak Off-State Repetitive Peak Reverse . Average On-State . Turn-Off . Gate =200 ^ 800v

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA <D I S C R E T E / O P T O Silicon Epitaxial Planar Type Variable Capacitance Diode 6 7 r. 0 3 3 0 6 n r ~ o 7-/9 1S2094 UHF, VHF AFC APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C) CHARACTERISTIC