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    ELECTROABSORPTION MODULATOR Search Results

    ELECTROABSORPTION MODULATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    ELECTROABSORPTION MODULATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New products FLD5F20NP-C A Modulator integrated with DFB Laser Diode Module for 10G bit/s, 80km Optical Transmission FLD5F20NP-C The FLD5F20NP-C is a compact 8mm-thick , high-performance module that monolithically integrates a DFB laser with an electroabsorption


    Original     		PDF FLD5F20NP-C FLD5F20NP-C PRBS223â

    VSC7983CD

    Abstract: NLK3581SSI VSC7983 STM-64 VSC7983-W VSC7983YE-02 33MIL
    Text: VSC7983 Data Sheet 11.2Gb/s Electroabsorption Modulator Driver APPLICATIONS FEATURES ● SONET OC-192 and SDH STM-64 Transmission Systems Up to 11.2Gb/s AC-Coupled Inputs ● 10GbE Modules ● Internally-Stabilized Modulation and Bias Outputs ● VSR Modules


    Original     		PDF VSC7983 OC-192 STM-64 10GbE 300mV VSC7983 G52394, VSC7983CD NLK3581SSI VSC7983-W VSC7983YE-02 33MIL

    VSC7983CD

    Abstract: VSC7983YE-02 FEC 10G STM-64 VSC7979 VSC7983 VSC7983-W VSC7999 electroabsorption modulator
    Text: PHYSICAL LAYER PRODUCT TRANSPORT PRODUCT VSC7983 11.2 Gb/s Electroabsorption Modulator Driver BENEFITS: Unique architecture provides excellent output impedance, further reducing output jitter. Extended case temperature range -10°C to 95°C providing more


    Original     		PDF VSC7983 277mA 1440mA 300mV RaC7999 VSC7979 VSC7983 VSC7984 VSC7992 VSC7983CD VSC7983YE-02 FEC 10G STM-64 VSC7979 VSC7983-W VSC7999 electroabsorption modulator

    E2500

    Abstract: E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 laser chirp parameter
    Text: Data Sheet August 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications


    Original     		PDF E2500-Type E2500 266-Type DS01-281OPTO DS98-368LWP) E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 laser chirp parameter

    NX8560MC

    Abstract: NX8560MC-CC-AZ NX8560MCS NX8560MCS-BC-AZ NX8560MCS-CC-AZ 10 gb laser diode NX8560MC Series
    Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560MC LASER DIODE MODULE WITH DRIVER SERIES FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560MC Series is an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW)


    Original     		PDF NX8560MC NX8560MC 19-PIN 75anty NX8560MC-CC-AZ NX8560MCS NX8560MCS-BC-AZ NX8560MCS-CC-AZ 10 gb laser diode NX8560MC Series

    ADC 50Ghz

    Abstract: ADC 50 Ghz ea-modulator 10Gb/s laser driver MTX-TEML lbss 10 k ntc thermistor multiplex EML 26 tunable laser
    Text: Preliminary Data Sheet MTX-TEML Multi-Channel Tunable Transmitter with Integrated Electro-Absorption Modulator APPLICATIONS The MTX-TEML is a compact, tunable transmitter solution based on Multiplex’s state-of-the-art Electroabsorption Modulated Laser EML technology.


    Original     		PDF 50GHz 10k/RTH ADC 50Ghz ADC 50 Ghz ea-modulator 10Gb/s laser driver MTX-TEML lbss 10 k ntc thermistor multiplex EML 26 tunable laser

    Electroabsorption modulator

    Abstract: 10G laser driver VSC8477 VSC7984 VSC7984YF STM-64 VSC7979 VSC7999 VSC8473 EML DRIVER
    Text: PHYSICAL LAYER PRODUCT TRANSPORT PRODUCT VSC7984 11.3 Gb/s Electroabsorption Modulator Driver BENEFITS: Unique architecture provides excellent output impedance, further reducing output jitter. Extended case temperature range -10°C to 95°C providing more


    Original     		PDF VSC7984 300mV SeC7999 VSC7979 VSC7983 VSC7984 VSC7992 VSC8473 VSC9271 VSC8477 Electroabsorption modulator 10G laser driver VSC8477 VSC7984YF STM-64 VSC7979 VSC7999 VSC8473 EML DRIVER

    Electroabsorption modulator

    Abstract: No abstract text available
    Text: WZ700004B 1/6 MITSUBISHI (OPTICAL DEVICES) FU-632SEA-xx1Mxx 1.55 µm EAM-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-632SEA-x61Mxx/-x31Mxx is an electroabsorption modulator integrated DFB-LD module with single mode optical fiber. This module is suitable for a light source of long haul


    Original     		PDF WZ700004B FU-632SEA-xx1Mxx FU-632SEA-x61Mxx/-x31Mxx 640km. Electroabsorption modulator

    vss 1558

    Abstract: NLK3581SSI vs-s1558 PRBS23 VSC7991 VSC7991CD VSC7991CD-01 VSC7991-W electroabsorption modulator laser diode
    Text: VSC7991 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Maximum Rise/Fall Times of 38ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules


    Original     		PDF VSC7991 488Gb/s, 952Gb/s, OC-192 VSC7991 G52321, vss 1558 NLK3581SSI vs-s1558 PRBS23 VSC7991CD VSC7991CD-01 VSC7991-W electroabsorption modulator laser diode

    bc 303 transistor

    Abstract: NX8564LE NX8566LE UL1581VW-1
    Text: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption


    Original     		PDF NX8564/ NX8565/ NX8566LE NX8564/8565/8566LE NX8564LE-BC/CC NX8565LE-BC/CC UL1581VW-1 bc 303 transistor NX8564LE NX8566LE UL1581VW-1

    electroabsorption modulator

    Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs


    Original     		PDF VSC7989 VSC7989 G52356, electroabsorption modulator electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator

    CyOptics DFB

    Abstract: LIM400 CyOptics DFB chip CYOPTICS laser cyoptics electroabsorption modulator laser diode cyoptics B007-M43-01-030 JESD625-A DFB ea 10GHZ apogee photonics
    Text: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee


    Original     		PDF LIM400 40Gb/s 40ps/nm GR-468-CORE DS07-107i LIM400 CyOptics DFB CyOptics DFB chip CYOPTICS laser cyoptics electroabsorption modulator laser diode cyoptics B007-M43-01-030 JESD625-A DFB ea 10GHZ apogee photonics

    laser chirp parameter

    Abstract: cyoptics CYOPTICS laser LIM400 AC Photonics, modulator JESD625-A laser transmitter 10ghz GR-468-CORE DFB laser drivers GPPO
    Text: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee


    Original     		PDF LIM400 40Gb/s 40ps/nm GR-468-CORE DS07-107i LIM400 laser chirp parameter cyoptics CYOPTICS laser AC Photonics, modulator JESD625-A laser transmitter 10ghz GR-468-CORE DFB laser drivers GPPO

    electroabsorption

    Abstract: ic vrm NX8560LJ 10 gb laser diode electroabsorption modulator electro-absorption modulator
    Text: PRELIMINARY DATA SHEET 1550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE WITH GPO CONNECTOR FOR 10 Gb/s APPLICATIONS NX8560LJ FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8560LJ is an EA Modulator integrated 1550 nm


    Original     		PDF NX8560LJ NX8560LJ 24-Hour electroabsorption ic vrm 10 gb laser diode electroabsorption modulator electro-absorption modulator

    MTX-TEML

    Abstract: ADC 50Ghz Diode BFM multiplex EML facet ntc
    Text: Preliminary Data Sheet MTX-TEML Multi-Channel Tunable Transmitter with Integrated Electro-Absorption Modulator APPLICATIONS The MTX-TEML is a compact, tunable transmitter solution based on Multiplex’s state-of-the-art Electroabsorption Modulated Laser EML technology.


    Original     		PDF 50GHz 10k/RTH MTX-TEML ADC 50Ghz Diode BFM multiplex EML facet ntc

    E2581-Type

    Abstract: E2581 E2581H E2581H19 E2581H20 E2581H21 E2581H22 E2581H23 10 gb laser diode 10Gb
    Text: Data Sheet March 2003 E2581-Type 10 Gb/s EML Modules for up to 80 km Transmission Description inTROtNICS IN u Q Tri ELEC 2581 odule , TO OP 10 C. E M er Las s / Gb Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength—full C-band


    Original     		PDF E2581-Type E2581-series DS02-335-1 DS02-335) E2581 E2581H E2581H19 E2581H20 E2581H21 E2581H22 E2581H23 10 gb laser diode 10Gb

    TOSA DWDM

    Abstract: tosa EML eml dfb laser diode 1550
    Text: Preliminary Data Sheet May 2004 TQ1000 10 - Gb/s Cooled EML TOSA with Integrated Driver Description The TQ1000 10 Gb/s transmitter optical subassembly TOSA integrates a CW DFB laser with an electroabsorption modulator in the same semiconductor chip and a laser driver in a small form-factor metallized


    Original     		PDF TQ1000 OC-192 STM-64 DS04-005-2 DS04-005-1) TOSA DWDM tosa EML eml dfb laser diode 1550

    NDL7911P

    Abstract: NDL7911PD477 NDL7911PD485 NDL7911PD493 NDL7911PD501 NDL7911PD509 NDL7911PD517 NDL7911PD525 NDL7911PD533
    Text: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7911P ULTRALONG-REACH APPLICATIONS 360 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7911P Series is an EA modulator integrated 1550 nm


    Original     		PDF NDL7911P NDL7911P 14-PIN 24-Hour NDL7911PD477 NDL7911PD485 NDL7911PD493 NDL7911PD501 NDL7911PD509 NDL7911PD517 NDL7911PD525 NDL7911PD533

    Untitled

    Abstract: No abstract text available
    Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


    OCR Scan     		PDF HL1566AF HL1566AF HL1566AFndicular)

    BD 266 S

    Abstract: 266l lucent microelectronics pump laser lucent microelectronics pump laser 980 Lucent M-266L31
    Text: Advance Data Sheet October 1996 microelectronics group Lucent Technologies Bell Labs Innovations 266-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultra Long-Reach Applications (>600 km) Applications • SONET/SDH extended-reach applications


    OCR Scan     		PDF 266-Type 14-pin DS96-382LWP DS96-087LWP PS95-002LWP-6) BD 266 S 266l lucent microelectronics pump laser lucent microelectronics pump laser 980 Lucent M-266L31

    Ea 1530 A

    Abstract: No abstract text available
    Text: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


    OCR Scan     		PDF HL1566AF HL1566AF ST-10 48832G Ea 1530 A

    Ea 1530 A

    Abstract: nrz optical modulator HL1566AF Hitachi Scans-001
    Text: HL1566AF 1.55 ¡im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is


    OCR Scan     		PDF HL1566AF HL1566AF 48832Gbps Ea 1530 A nrz optical modulator Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is


    OCR Scan     		PDF HL1553 HL1553

    Untitled

    Abstract: No abstract text available
    Text: HL1553 1.55 |um Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is


    OCR Scan     		PDF HL1553 HL1553