hearing aid chip
Abstract: Chirp Spread Spectrum electromagnetic pulse generator kit Xilinx Ethernet development arc welder circuit Nanotron Technologies nanoNET system specifications RF basics ADC hard radiation wireless optical mouse controller
Text: nanoNET TRX RF Performance Evaluation Kit User Manual Version 1.02 nanoNET TRX RF Performance Evaluation Kit User Manual Document Information Document Title: nanoNET TRX RF Peformance Evaluation Kit User Manual Version/Release number: 1.02 Released yyyy-mm-dd :
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NA-04-0133-0290-1
hearing aid chip
Chirp Spread Spectrum
electromagnetic pulse generator kit
Xilinx Ethernet development
arc welder circuit
Nanotron Technologies
nanoNET system specifications
RF basics
ADC hard radiation
wireless optical mouse controller
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CLF1G0035-100P
Abstract: sot1228 electromagnetic pulse jammers
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 1 — 10 December 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
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CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
sot1228
electromagnetic pulse jammers
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ATP10K100M
Abstract: 100w1000 Amplifier Research LA250
Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation
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250T1G3,
200T2G8A
250T8G18
January/3500
ATP10K100M
100w1000
Amplifier Research LA250
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Untitled
Abstract: No abstract text available
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
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CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
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PCE3667CT-ND
Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
PCE3667CT-ND
capacitor 56J pF
a 69154
SOT1227A
200V470
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sot1227
Abstract: 082279 SOT1227A Model 284J 226J
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
sot1227
082279
SOT1227A
Model 284J
226J
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Untitled
Abstract: No abstract text available
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
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ATC 600F
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
ATC 600F
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SOT1227A
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
SOT1227A
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AN11130
Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
AN11130
Micro-coax UT
UT-062C-18
LR12010T0200J
RL7520WT-R005-f
Micro-coax UT-062C-18
RL7520WT-R005
Z5 1512
1001G00
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Untitled
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
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I1228
Abstract: No abstract text available
Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035-100
CLF1G0035-100
I1228
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30221
Abstract: LR12010T0200J
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
30221
LR12010T0200J
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Untitled
Abstract: No abstract text available
Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
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CLF1G0035-100;
CLF1G0035S-100
CLF1G0035-100
CLF1G0035S-100
1G0035S-100
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Untitled
Abstract: No abstract text available
Text: Techniques for Precise Interference Measurements in the Field Using FieldFox handheld analyzers Application Note This application note discusses the different kinds of interference that operators will encounter in both current and new wireless environments. It introduces efficient and effective measurement techniques and instrument requirements for testing interference using modern highperformance spectrum analyzers such as Agilent FieldFox analyzers, which have the versatility
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5991-0418EN
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bc857b nxp
Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
bc857b nxp
C5750X7S2A106M
Gan transistor
C 1972 transistor
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Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035S-50
CLF1G0035S-50
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Untitled
Abstract: No abstract text available
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
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100B102KW
Abstract: AN11130 66-0304-00004-000 600F0R 96798
Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from
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CLF1G0035-50;
CLF1G0035S-50
CLF1G0035-50
CLF1G0035S-50
1G0035S-50
100B102KW
AN11130
66-0304-00004-000
600F0R
96798
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MDD 1654
Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
Text: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82
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Trimble ocxo
Abstract: doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors
Text: Reprinted from Ultrasonic Instruments and Devices 01999, Academic Press, Inc. The book is copyrighted, however this chapter is not, because the authors are employees of the U.S. Government and performed this work as part of their official duties. The work is therefore not subject to copyright protection.
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CH-2000
LJFFC-34,
UFFC-35,
Trimble ocxo
doppler radar circuit for speed sensing
airborne pulse doppler radar
24 GHz Microwave Doppler Radar Speed Sensor
radio control helicopter circuit diagram
advantages of mobile signal jammer circuit
z cut quartz piezoelectric properties
Camera Jammer
Introduction to Radar
microwave RADAR motion sensors
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ph 4148 zener diode detail
Abstract: sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration
Text: ZiLOG Design Concepts Z8 Application Ideas AN004901-0900 ZILOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ WWW.ZILOG.COM ZiLOG Design Concepts Z8 Application Ideas This publication is subject to replacement by a later edition. To determine whether a later edition
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AN004901-0900
Z86E31
Z86E40
Z86E83
Z8E001
Z8PE001
ph 4148 zener diode detail
sk100 TRANSISTOR REPLACEMENT
equivalent transistor sl100
sl100 npn transistor
sonar block diagram
air conditioner schematic diagram
SL100 transistor pin configuration
SL100 npn transistor characteristics
Cell Phone Jammers project kit
SL100 pin configuration
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