Si9959
Abstract: SI9910 AN90 siliconix
Text: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he
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AN90-5
AN90-4.
Si9955DY
Si9956DY
Si9959
SI9910
AN90 siliconix
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C1429-2
Abstract: smd transistor ISS
Text: T EMIC BUD725D S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology
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BUD725D
BUD725D
D-74025
17-Oct-97
C1429-2
smd transistor ISS
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SMP30N10
Abstract: P N-Channel D-S MOSFET
Text: ^ EMIC SMP30N10 Sem i co n d u c t or s N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) I d (A) r DS(on) ( ^ ) 0.060 100 30 D O TO-220AB o .J l DRAIN connected to TAB o GD S s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMP30N10
O-220AB
P-36853--Rev.
06-Jun-94
SMP30N10
P N-Channel D-S MOSFET
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Untitled
Abstract: No abstract text available
Text: ^ EMIC U2891B-B S e m i c o n d u c t o r s 2.5-GHz Quadrature Up-Converter Description The U2891B-B is a silicon monolithic integrated circuit, manufactored using EMIC emiconductors’ advanced UHF process. This integrated circuit consists of a 500-MHz I/Q
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U2891B-B
U2891B-B
500-MHz
U2891B
D-74025
05-Mar-99
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1N48 diode
Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON EMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M
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00034e]
1N34A
at-10V
at-25
1N38A
1N38B
-100V
at-50V
at-50
1N52A
1N48 diode
diode in34a
IN34A
DIODE 1N54
1N34 DIODE
diode 1n34
1N34
1N48
1Ns4
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Untitled
Abstract: No abstract text available
Text: QS74FCT163373 sa ^ High Speed CMOS 3.3V ITY QS74FCT163373 16-Bit Transparent Latches S emiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Pin and function compatible with T.l. Widebus and IDT Double-Density™ families • CMOS power levels: <1 |j.W typical standby
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QS74FCT163373
16-Bit
traS-48B
PSS-56B
74bbfl03
APOP-00014-00
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NA51W
Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National emiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P
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bSD113D
NB311,
NB321,
andTO-202
b5D113D
NB313Y"
NB022EY
NR001E
NB113EY
NA51W
NA52W
NB313Y
NA52W pnp
35604
NB311
NB312
NB313
NB321
NB322
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Untitled
Abstract: No abstract text available
Text: 60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS D a ta Sheet emiconductor Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0
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FBR6030
FBR6035
FBR6040
FBR6045
FBRB050
FBR6060
51X25X30cm
21X21X5
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Untitled
Abstract: No abstract text available
Text: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS emiconductor i § Mechanical Dimensions Description JEDEC T0-220AC .150 A-. I i .350 .240 i— H - .200 .390 {4—» .107 Features • HIGH CURRENT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION
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T0-220AC
FBR1650
FBR1650
FBR1660
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high
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Untitled
Abstract: No abstract text available
Text: A I R C H I L D “ ay. 19 ,8 . 1 R e v is e d A u g u s t 1 9 9 9 EMICONDUCTGRTM 74F381 4-Bit Arithmetic Logic Unit General Description Features T h e 7 4F 381 p e rfo rm s th re e a rith m e tic a n d th re e lo g ic o p e r • L o w in p u t lo a d in g m in im iz e s d riv e re q u ire m e n ts
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74F381
74F182
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Untitled
Abstract: No abstract text available
Text: Revised June 1999 EMICONDUCTGRTM 74LVT162244 • 74LVTH162244 Low Voltage 16-Bit Buffer/Line Driver with 3-STATE Outputs and 25Q Series Resistors in the Outputs technology to achieve high speed operation sim ilar to 5V A B T w hile m aintaining a low pow er dissipation.
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74LVT162244
74LVTH162244
16-Bit
LVT162244
LVTH162244
48-Lead
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Untitled
Abstract: No abstract text available
Text: pRevised ebm7,1 ?9l1999 o July EMICONDUCTGRTM 74LVXC3245 8-Bit Dual Supply Configurable Voltage Interface Transceiver with 3-STATE Outputs General Description Features The LVXC3245 is a 24-pin dual-supply, 8-bit configurable voltage interface transceiver suited for PCMCIA and other
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74LVXC3245
LVXC3245
24-pin
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Untitled
Abstract: No abstract text available
Text: A I R C H I L D p PriM9H8!! i QQQ Revised A ugust 1999 EMICONDUCTGRTM 74F537 1-of-10 Decoder with 3-STATE Outputs Two input enables, active HIGH E2 and active LO W E-|, are General Description The 74F537 is one-of-ten decoder/dem ultiplexer with four active HIGH BCD inputs and ten m utually exclusive o ut
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74F537
1-of-10
74F537
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function of IC CD4538
Abstract: CD4538
Text: February 1984 Revised February 1999 EMICONDUCTGRTM General Description The MM74HC4538 high speed monostable multivibrator one shots is implemented in advanced silicon-gate CMOS technology. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power
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MM74HC4538
function of IC CD4538
CD4538
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Untitled
Abstract: No abstract text available
Text: S e p te m b e r 1 9 8 3 R e v is e d F e b ru a ry 199 9 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description A ll in p u ts a re p ro te c te d fro m d a m a g e d u e to s ta tic d is c h a rg e b y in te rn a l d io d e c la m p s to V q q a n d g ro u n d .
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MM74HC08
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Untitled
Abstract: No abstract text available
Text: EClamp2384K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2384K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state
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EClampTM2384K
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2522p
Abstract: No abstract text available
Text: EClamp2522P USB Upstream Port Filter and TVS For EMI Filtering and ESD Protection PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2522P is an easily implemented solution for protection and termination of low speed or full speed Universal Serial Bus USB ports. Each device will
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EClampTM2522P
2522p
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USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection
Abstract: ECLAMP2122S sot-23 marking code 352 marking code YW DIODE
Text: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB 2.0 interfaces. This device utilizes solid-state
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2122S
USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection
ECLAMP2122S
sot-23 marking code 352
marking code YW DIODE
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Untitled
Abstract: No abstract text available
Text: EClamp2454P ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2454P is a L-C low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic
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EClampTM2454P
inducto05
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Untitled
Abstract: No abstract text available
Text: EClamp2376K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2376K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic
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EClampTM2376K
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Untitled
Abstract: No abstract text available
Text: EClamp0504T Low Profile EClamp 4-Line ESD protection PROTECTION PRODUCTS - EMIClamp® Description Features The EClamp 0504T is designed to protect sensitive electronics from damage or latch-up due to ESD. This stateof-the-art device utilizes solid-state silicon-avalanche
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EClamp0504T
0504T
5/50ns)
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ca3078
Abstract: No abstract text available
Text: blE T> • HARRIS SEniCOND SECTOR 4302271 0DMb233 752 H H A S HARRIS 8 EMICONOUCTOR March1993 Micropower Operational Amplifier Features Description • • • • • Low Standby P o w e r. AsLowAs700nW The CA3078 and CA3078A are high gain monolithic
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0DMb233
arch1993
AsLowAs700nW
CA3078
CA3078A
and20
CA307?
004b241
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products Quau" S emiconductor , In c . q s 38oo High-Speed CMOS 10-Bit QuickSwitch with Precharged Outputs FEATURES/BENEFITS DESCRIPTION • 5Q. bidirectional switches connect inputs to outputs • Zero propagation delay • Undershoot clamp diodes on all switch
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10-Bit
QS3800
MDSL-00086-01
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