2SA1417
Abstract: 2SC3647
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
|
Original
|
PDF
|
2SA1417
2SC3647
EN2006C
2SA1417
2SC3647
|
Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
|
Original
|
PDF
|
2SA1417
2SC3647
EN2006C
2SA1417
|
Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
|
Original
|
PDF
|
2SA1417
2SC3647
EN2006C
2SA1417
|
Untitled
Abstract: No abstract text available
Text: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.
|
Original
|
PDF
|
2SA1417
2SC3647
EN2006C
2SA1417
|