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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8970A ATP218 N-Channel Power MOSFET http://onsemi.com 30V, 100A, 3.8mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.) Halogen free compliance •


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    PDF EN8970A ATP218 6600pF PW10s) PW10s, L100Hwhere

    Untitled

    Abstract: No abstract text available
    Text: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.)


    Original
    PDF ATP218 EN8970A 6600pF

    Untitled

    Abstract: No abstract text available
    Text: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.)


    Original
    PDF ATP218 EN8970A 6600pF