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    AS21

    Abstract: No abstract text available
    Text: MCH3007 Ordering number : ENA1925A SANYO Semiconductors DATA SHEET MCH3007 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V)


    Original     		PDF MCH3007 ENA1925A A1925-12/12 AS21

    A19-257

    Abstract: No abstract text available
    Text: MCH3007 Ordering number : ENA1925A SANYO Semiconductors DATA SHEET MCH3007 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V)


    Original     		PDF ENA1925A MCH3007 019A-004 MCH3007-TL-H A1925-12/12 A19-257

    A19-257

    Abstract: No abstract text available
    Text: MCH3007 Ordering number : ENA1925 SANYO Semiconductors DATA SHEET MCH3007 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V)


    Original     		PDF ENA1925 MCH3007 019A-004 A1925-10/10 A19-257

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1925A MCH3007 RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3 http://onsemi.com Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V) High gain : |S21e|2=12dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1925A MCH3007 A1925-12/12

    Untitled

    Abstract: No abstract text available
    Text: MCH3007 Ordering number : ENA1925 SANYO Semiconductors DATA SHEET MCH3007 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V)


    Original     		PDF MCH3007 ENA1925 A1925-10/10

    A19-257

    Abstract: MCH3007
    Text: MCH3007 Ordering number : ENA1925 SANYO Semiconductors DATA SHEET MCH3007 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=8GHz typ (VCE=5V)


    Original     		PDF ENA1925 MCH3007 019A-004 A1925-10/10 A19-257 MCH3007