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    Efficient Power Conversion EPC2010C

    GANFET N-CH 200V 22A DIE OUTLINE
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    DigiKey EPC2010C Cut Tape 4,473 1
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    EPC2010C Digi-Reel 4,473 1
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    EPC2010C Reel 2,500
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    Efficient Power Conversion EPC2010

    GANFET N-CH 200V 12A DIE
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    EPC2010 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2010 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 12A BUMPED DIE Original PDF
    EPC2010C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 200V 22A BUMPED DIE Original PDF
    EPC2010ENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 12A BUMPED DIE Original PDF

    EPC2010 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: EPC2010 eGaN FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2010

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2010 EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2010

    SS8410BB

    Abstract: No abstract text available
    Text: 1 2 4 3 5 6 7 - 12 Vdc J1 1 2 A CON2 U3 IN OUT 1 7 NC NC 2 6 NC NC 3 5 NC GND 4 VCC A C11 1uF, 25V C4 1uF, 25V 9 GND C10 1uF, 25V 8 MCP1703 U13 EN C18 OPT IN NC GND D3 BAV21 OUT OPT TP2 Keystone 5015 J5 CON4 PWM1 1 B 2 B 3 GND VCC 6 VDD U2 6 C2 1uF, 25V 5 5


    Original     		PDF MCP1703 BAV21 EPC2010 LM5114MF SS8410BB NC7SZ00L6X NC7SZ08L6X SDM03U40 SS8410BB

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Waveforms for VIN = 150 V to 5 V/5 A 100kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9003 development board does not have any current or thermal protection on board.


    Original     		PDF 100kHz) EPC9003 EPC2010