Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EPC2818 Search Results

    SF Impression Pixel

    EPC2818 Price and Stock

    Amphenol Corporation ZREP-C28-18S

    Star-Line Series Circular Connector Receptacle 6 Position Socket Contact Panel Mount - Bulk (Alt: ZREP-C28-18S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ZREP-C28-18S Bulk 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Amphenol Corporation ZREP-C28-18P

    Star-Line Series Circular Connector Receptacle 6 Position Pin Contact Panel Mount - Bulk (Alt: ZREP-C28-18P)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ZREP-C28-18P Bulk 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Amphenol Corporation ZPEP-C28-18P

    Star-Line Series Circular Connector Plug 6 Position Pin Contact Panel Mount - Bulk (Alt: ZPEP-C28-18P)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ZPEP-C28-18P Bulk 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Amphenol Industrial Operations ZREP-C28-18P

    CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Interstate Connecting Components ZREP-C28-18P
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    EPC2818 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2818 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 150V 12A BUMPED DIE Original PDF

    EPC2818 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2818 EPC2818 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 150 V RDS ON , 25 mW ID , 12 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2818