IXTD24P20
Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M
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02N50D-1M
01N100D-1M
02N50D
01N100D
IXTD36P10-5B
IXTD50P10-7B
IXTD16P20-5B
IXTD24P20-7B
IXTD8P50-5B
IXTD11P50-7B
IXTD24P20
depletion mode mosfet
DEPLETION
P-Channel Depletion Mosfet
IXTH36P10
P-Channel Depletion Mosfets
IXTH50P10
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LEMO 3-Pin
Abstract: 1m trimpot LEMO ionisation DZ01-0201-22 transimpedance photomultiplier
Text: Datasheet HCA-1M-1M-C High Speed Current Amplifier Features Bandwidth and Frequency Response Independent of Detector Capacitance up to 2 nF Low Noise 3.5 pA/√ √Hz Equivalent Input Noise Current Bandwidth DC . 1 MHz 6 Transimpedance (Gain) 1 x 10 V/A
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toshiba nand tc58
Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a
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AN1839
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
toshiba nand tc58
toshiba Nand flash
toshiba Nand part numbering
tc58 flash
samsung tc58
Toshiba NAND
TOSHIBA TC58 cmos memory -NAND
NAND256-A
TOSHIBA part numbering
VFBGA63
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full adder circuit using nor gates
Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
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MA9000
DS3598-3
full adder circuit using nor gates
D-latch
DIL40
DIL48
half adder ttl
half adder circuit using nor and nand gates
microprocessor radiation hard datasheet
SRDL
DIL14
DIL16
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
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DS3598-3
MA9000
D0242bl
3Sx24nnnxxxxx
37bflS22
00242b2
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Untitled
Abstract: No abstract text available
Text: 1.5-*0.5'-2 PLCS 36.525*0.025 DIA MUST BE SMOOTH FOR O-RING SEAL 8.00 MIN. 21.75*0.25 1.50 R. TYP. DATE SYM 150C87 B REVISION RECORD AUTHORITY REVISED LOCK ARMS AND PINS 4 PLCS. 23MY8E DR CK LT REVISED LOCK ARMS AND CASE DIMENSIONS. 23 JN8S D 02NO86 ADD OVERALL DIMENSIONS.
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150C87
23MY8E
PE00S616
02NO86
07AP89
PE00S8S1
26SE8C
8S0005
12S73<
1326063AFBAR
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. SYM DATE 02NO85 B 11MR86 DO NOT S C A L E 20JA06 B1 AUTHORITY DR CK
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1047S2
20JA06
11MR86
02NO85
12064SS8
TE12DE85
TE16DE85
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Untitled
Abstract: No abstract text available
Text: AZ1013-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features line, protecting any downstream components. AZ1013-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge .
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AZ1013-02N
AZ1013-02N
5/50ns)
107XY
116XY
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Untitled
Abstract: No abstract text available
Text: AZ1015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to
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AZ1015-02N
5/50ns)
102XY.
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amazing
Abstract: DIODE T25 4 AZC002-02N 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram 1394 firewire 6 pin to USB marking 5a sot143 sot143 usb tvs
Text: AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to z AZC002-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4
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AZC002-02N
AZC002-02N
5/50ns)
8/20s)
C04XY
C06XY
amazing
DIODE T25 4
1394 6 pin firewire to USB Connection Diagram
Diode Equivalent t25 4
6 pin Package 02n
1394 firewire to USB Connection Diagram
1394 firewire 6 pin to USB
marking 5a sot143
sot143 usb tvs
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Untitled
Abstract: No abstract text available
Text: AZC015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels
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AZC015-02N
AZC015-02N
5/50ns)
C03XY
C03XY.
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HIGH VOLTAGE DIODE 6kv
Abstract: sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
Text: SSEPAA5-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features z z ESD Protect for 2 high-speed I/O channels Provide ESD protection for each channel to immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge .
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SSEPAA5-02N
5/50ns)
8/20s)
HIGH VOLTAGE DIODE 6kv
sot143 TOP marking 16
tvs diode marking code fo
Firewire ESD
SSEPAA5-02N
MARKING 02n
SOT143-4L
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AZ1015-02N
Abstract: EQUIVALENT 02n
Text: AZ1015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to
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AZ1015-02N
5/50ns)
102XY.
AZ1015-02N
EQUIVALENT 02n
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Untitled
Abstract: No abstract text available
Text: AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features AZC002-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels
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AZC002-02N
AZC002-02N
5/50ns)
C04XY
C04XY.
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c09x
Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: AZC015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to z AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4
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AZC015-02N
AZC015-02N
5/50ns)
8/20s)
techno09
C03XY.
c09x
SOT143-4L
DIODE T25 4
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IR3G01
Abstract: high speed comparator
Text: High Speed Comparator IR3G 01/IR3G 01N/IR 3G 02/IR3G 02N IR3G01/IR3G01N/IR3G02/IR3G02N High Speed Comparator • Description ■ The IR3G01/IR3G01N/IR3G02/IR3G02N is a high speed comparator IC which uses the conventional Schottky diode technology. It’s outputs are compati
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01/IR3G
01N/IR
02/IR3G
IR3G01/IR3G01N/IR3G02/IR3G02N
IR3G01/IR3G01N/IR3G02/IR3G02N
02/IR
IR3G01/IR3G01N.
IR3G01
IR3G02
14-pin
high speed comparator
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omnivision infrared
Abstract: No abstract text available
Text: Protection Device TVS Transient Voltage Suppressor ESD311-U1-02N Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant ESD311-U1-02N Data Sheet Revision 1.0, 2014-05-28 Final Power Management & Multimarket Edition 2014-05-28 Published by Infineon Technologies AG
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ESD311-U1-02N
omnivision infrared
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Untitled
Abstract: No abstract text available
Text: Protection Device TVS Transient Voltage Suppressor ESD307-U1-02N Uni-directional, 10 V, 270 pF, 0603, RoHS and Halogen Free compliant ESD307-U1-02N Data Sheet Revision 1.0, 2014-05-30 Final Power Management & Multimarket Edition 2014-05-30 Published by Infineon Technologies AG
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ESD307-U1-02N
AN210:
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2SB646(A) equivalent
Abstract: SKIIP 12NAB126 V23990-K218-F40-PM 11AC126V1 80-M006PNB010SA01-K615D A/APM2055N equivalent 23NAB126V1
Text: MiniSkiiP Power Modules for Standard Drives MiniSKiiP® Options MiniSKiiP® modules with thermal grease Option A or B Lids Two lidss are available for all MiniSKiiP® iiP® modules: • ■ Thin Lid Standard Lid L Standard dard 6.5 mm version allowing
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7404* 15v
Abstract: 7470N 7400N 74107N 7401N 7402N 7403AN 7403N SA 7493N 7405AN
Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221 FJH291 FJH301
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
7404* 15v
7470N
74107N
SA 7493N
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J111A
Abstract: 7400N 7480N 7472N 7401N 7402N 7403AN 7403N 7404N 7405AN
Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221 FJH291 FJH301
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
J111A
7480N
7472N
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6473N
Abstract: 7405N tir 101a 7400N 7401N 7402N 7403AN 7403N 7404N 7405AN
Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE C O M M E R C IA L V E R S IO N S Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
6473N
tir 101a
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2708-t
Abstract: Hitachi DSA00281 TX26D14VM2EAA
Text: KAOHSIUNG HITACHI ELECTRONICS CO., LTD. DATE: Aug. 02nd 2010 FOR MESSRS: CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX26D14VM2EAA Contents No. ITEM SHEET No. PAGE 1 COVER 7B64PS 2701-TX26D14VM2EAA -1 1-1/1 2 RECORD OF REVISION 7B64PS 2702-TX26D14VM2EAA -1 2-1/1
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TX26D14VM2EAA
7B64PS
2701-TX26D14VM2EAA
2702-TX26D14VM2EAA
2703-TX26D14VM2EAA
2704-TX26D14VM2EAA
2708-t
Hitachi DSA00281
TX26D14VM2EAA
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mosfet equivalent
Abstract: mosfet base inverter with chargers circuit SKiiP 83 AC 12 i t 46 fy074pa SKIIP 33 UPS 06 V23990-P769-A-PM 25AC12T4v semikron skiip 83 SKiiP 31 AC 12 T2
Text: POWER MODULES 2015 � 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS. Vincotech, an independent company within the Mitsubishi Electric Corporation, is a market leader and reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power
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