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    EQUIVALENT IR 2010 Search Results

    EQUIVALENT IR 2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT IR 2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CUS520 Schottky Barrier Diode Silicon Epitaxial CUS520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit


    Original     		PDF CUS520 OD-323 SC-76

    Untitled

    Abstract: No abstract text available
    Text: CES520 Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit


    Original     		PDF CES520 OD-523 SC-79

    RB050M-30

    Abstract: RSX201VA-30 RB080L-30 RSBC6.8CS RSAC6.8CS RB055L-30 RB050M RSAC16CS EDZ TE61 27B ROHM tfz diodes
    Text: 2010 Product Catalog Discrete Semiconductors Schottky Barrier Diodes Zener Diodes Schottky Barrier Diodes Original fine process technology and a unique device structure have enabled ROHM to develop Schottky barrier diodes that feature simultaneously low VF and IR - an unprecedented accomplishment


    Original     		PDF O-220) R0039A 52P6216E RB050M-30 RSX201VA-30 RB080L-30 RSBC6.8CS RSAC6.8CS RB055L-30 RB050M RSAC16CS EDZ TE61 27B ROHM tfz diodes

    Untitled

    Abstract: No abstract text available
    Text: May 20th, 2010 Automotive Grade AUIRS4428S DUAL LOW SIDE DRIVER Product Summary Features • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs Matched propagation delay for both channels OutputA out of phase with InputA and


    Original     		PDF AUIRS4428S AUIRS4426S

    AEC-Q100

    Abstract: AEC-Q100-002 marking h3a AUIRS4426S igbt reference schematics application of dc-dc converter AUIRS4428S
    Text: May 20th, 2010 Automotive Grade AUIRS4428S DUAL LOW SIDE DRIVER Features • • • • • • Product Summary Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs Matched propagation delay for both channels OutputA out of phase with InputA and


    Original     		PDF AUIRS4428S AUIRS4426S AEC-Q100 AEC-Q100-002 marking h3a AUIRS4426S igbt reference schematics application of dc-dc converter AUIRS4428S

    AUIRS2181S

    Abstract: 14SOICN AUIRS2183 AUIRS21814 AUIRS2181STR AUIRS2181 "Common rail" 3A diode International Rectifier AEC-Q100 1000v 3a diode
    Text: July 27th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF AUIRS2181 160ns; 200ns; AUIRS2181S 14SOICN AUIRS2183 AUIRS21814 AUIRS2181STR "Common rail" 3A diode International Rectifier AEC-Q100 1000v 3a diode

    AUIRS2183

    Abstract: No abstract text available
    Text: July 28th, 2010 Automotive Grade AUIRS21811S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt


    Original     		PDF AUIRS21811S 230ns AUIRS2181 160/200ns AUIRS2184 600/230ns; AUIRS2183

    AUIRS2183

    Abstract: No abstract text available
    Text: July 27th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF AUIRS2181 160ns; 200ns; AUIRS2183

    AUIRS21811S

    Abstract: AUIRS21811 AEC-Q100 AEC-Q100-002 CIC310 AUIRS21811STR
    Text: July 28th, 2010 Automotive Grade AUIRS21811S HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt


    Original     		PDF AUIRS21811S 135nupdated 230ns AUIRS2181 160/200ns AUIRS2184 600/230ns; AUIRS21811S AUIRS21811 AEC-Q100 AEC-Q100-002 CIC310 AUIRS21811STR

    xgold

    Abstract: No abstract text available
    Text: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		PDF IEC61000-4-2 xgold

    transistor 13001 s 6b

    Abstract: 13001 S 6B TRANSISTOR S 6B 13001 transistor AUIRS21271 st 13001 TRANSISTOR AS2127 13001 TRANSISTOR free AUIRS21271S N CHANNEL MOSFET 10A 1000V transistor 13001 s 6a
    Text: October 26th, 2010 Automotive Grade AUIRS212 7,71,8,81 S Over Current Protected Single Channel Driver Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune


    Original     		PDF AUIRS212 AUIRS2127/AUIRS2128) AUIRS21271/AUIRS21281) AUIRS2127/AUIRS21271) AUIRS2128/AUIRS21281) 2V-20V V-20V transistor 13001 s 6b 13001 S 6B TRANSISTOR S 6B 13001 transistor AUIRS21271 st 13001 TRANSISTOR AS2127 13001 TRANSISTOR free AUIRS21271S N CHANNEL MOSFET 10A 1000V transistor 13001 s 6a

    33178

    Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/420L 1N5550 1N5554, 1N5550US 1N5554US, MIL-PRF-19500. 33178 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: November 2nd, 2010 Automotive Grade AUIRS2004S HALF-BRIDGE DRIVER IC Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +200 V Tolerant to negative transient voltage – dV/dt immune


    Original     		PDF AUIRS2004S 130mA 270mA ns/150 700nS 520ns; 650ns 800ns; 150ns,

    13001 s 6B

    Abstract: AUIRS2184 AUIRS21844STR AEC-Q100 AUIRS2181 AUIRS21844S IO-25 IC AX 2008 CIRCUIT DIAGRAM WITH PIN CONFIGURATION 0218E
    Text: July 27th, 2010 Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt


    Original     		PDF AUIRS2184 600ns; 230ns; 220ns, 350ns; 200Kohms) 375ns; 130uA; /-100V /-150V. 13001 s 6B AUIRS21844STR AEC-Q100 AUIRS2181 AUIRS21844S IO-25 IC AX 2008 CIRCUIT DIAGRAM WITH PIN CONFIGURATION 0218E

    AUIRS2183

    Abstract: AUIRS2181S class d circuit diagram AUIRS2181STR "Common rail" AEC-Q100 common rail AUIRS2181 14SOICN
    Text: February 24th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF AUIRS2181 AUIRS2183 AUIRS2181S class d circuit diagram AUIRS2181STR "Common rail" AEC-Q100 common rail 14SOICN

    AEC-Q100-011

    Abstract: marking h3a AEC-Q100 AEC-Q100-002 AUIRS4427S IR circuit diagram 3 phase rectifier circuit diagram igbt AEC-Q100-003 4015 IC circuit diagram
    Text: January 20th, 2010 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features • • • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers Matched propagation delay for both channels


    Original     		PDF AUIRS4427S AEC-Q100-011 marking h3a AEC-Q100 AEC-Q100-002 AUIRS4427S IR circuit diagram 3 phase rectifier circuit diagram igbt AEC-Q100-003 4015 IC circuit diagram

    AEC-Q100

    Abstract: AEC-Q100-004 AEC-Q100-002 AUIRS4427S marking h3a AUIRS4427
    Text: March 15th, 2010 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features • • • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers Matched propagation delay for both channels


    Original     		PDF AUIRS4427S AEC-Q100 AEC-Q100-004 AEC-Q100-002 AUIRS4427S marking h3a AUIRS4427

    LL101B

    Abstract: LL101C SD101B SD101C SMD Schottky Dioden
    Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35


    Original     		PDF SD101B SD101C DO-35 OD-27 LL101B. LL101C LL101B LL101C SD101B SD101C SMD Schottky Dioden

    IC ax 2008 circuit diagram

    Abstract: IC AX 2008 CIRCUIT DIAGRAM WITH PIN CONFIGURATION AS2118 IC ax 2008 AUIRS2118 AUIRS2117S AS2117 free circuit diagram for 13001 AUIRS2117 pin configuration and assignments of bridge rectifier
    Text: February 2nd, 2010 Automotive Grade AUIRS211 7,8 S SINGLE CHANNEL DRIVER Features • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Topology Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune VOFFSET


    Original     		PDF AUIRS211 AUIRS2117) AUIRS2118) IC ax 2008 circuit diagram IC AX 2008 CIRCUIT DIAGRAM WITH PIN CONFIGURATION AS2118 IC ax 2008 AUIRS2118 AUIRS2117S AS2117 free circuit diagram for 13001 AUIRS2117 pin configuration and assignments of bridge rectifier

    Untitled

    Abstract: No abstract text available
    Text: February 2nd, 2010 Automotive Grade AUIRS211 7,8 S SINGLE CHANNEL DRIVER Features • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Topology Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune VOFFSET


    Original     		PDF AUIRS211 AUIRS2117) AUIRS2118)

    13001 s 6B

    Abstract: AUIRS2181 AUIRS2184 AUIRS21844 AEC-Q100 zener alternator rectifier AUIRS21844STR
    Text: February 24th, 2010 Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt


    Original     		PDF AUIRS2184 13001 s 6B AUIRS2181 AUIRS21844 AEC-Q100 zener alternator rectifier AUIRS21844STR

    rf1501

    Abstract: RFU20TM5 RFUS20 RF2001 RF1501TF3S RF1501NS3S rfu20 RFU20TM5S RF05VA2S 1SR154
    Text: 2010 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one


    Original     		PDF R0039A 52P6217E rf1501 RFU20TM5 RFUS20 RF2001 RF1501TF3S RF1501NS3S rfu20 RFU20TM5S RF05VA2S 1SR154

    Untitled

    Abstract: No abstract text available
    Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 40.50 V Glass case Glasgehäuse 3.9 62.5 15 mA DO-35


    Original     		PDF SD101B SD101C DO-35 OD-27 LL101B. LL101C SD101C SD101B

    FGE0500

    Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
    Text: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer


    OCR Scan     		PDF F100K 225j3 FGE0500 FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050