Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent
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HN7G01
2SA1955
2SK1830
HN7G01FU
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IFN147
Abstract: No abstract text available
Text: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA
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IFN147
2SK147
NJ450
00Q0BG4
IFN147
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2SK1826
Abstract: No abstract text available
Text: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1826
961001EAA2
2SK1826
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K1825
Abstract: No abstract text available
Text: TOSHIBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1825
000707EAA1
K1825
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2SK1825
Abstract: No abstract text available
Text: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1825
961001EAA2
2SK1825
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2sk112
Abstract: No abstract text available
Text: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA
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IFN112
2SK112
NJ132H
2sk112
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2SC4639
Abstract: FC18 FC18F 2SK2394 ITR10364 FET MARKING DB64
Text: Ordering number:ENN4983 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET FC18 High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the
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ENN4983
2SK2394
2SC4639,
2SC4639
FC18
FC18F
ITR10364
FET MARKING
DB64
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2SK146
Abstract: IFN146
Text: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2SK146
IFN146
NJ450
2SK146
IFN146
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for
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2SK3107
2SK3107
SC-75
13802E
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 2.5-V power source. 1.25 ± 0.1
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2SK2858
2SK2858
SC-70
D11706EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE
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2SK3225
O-251
2SK3225-Z
O-252
O-251/TO-252
DD13798EJ1V0DS00
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equivalent transistor 2sk
Abstract: 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk
Text: Ordering number: ENN7021 | TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET _FC21 SANYO/ High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features • T h e F C 2 l contains both a 2SK 1740 equivalent chip
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ENN7021
equivalent transistor 2sk
2sc 1740 TRANSISTOR equivalent
sanyo tuner
npn C 1740
sanyo
2sc 1740 transistor
equivalent transistor TO 2sk
transistor 2sk
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO -220AB 2SK3353-S TO-262 2SK3353-Z
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2SK3353
2SK3353
-220AB
2SK3353-S
O-262
2SK3353-Z
TQ-220SM
D14130EJ1V0DS00
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Unit: mm
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2SK1825
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Untitled
Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking
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2SK1830
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Untitled
Abstract: No abstract text available
Text: 2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking
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2SK1829
SC-70
006portation
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V PACKAGE DRAWING Unit : mm power source. The 2SK2857 features a low on-state resistance and excellent switching
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2SK2857
2SK2857
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2SK2033
Abstract: No abstract text available
Text: 2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 µs typ.
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2SK2033
O-236MOD
SC-59
2SK2033
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2SK2037
Abstract: No abstract text available
Text: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 µs typ.
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2SK2037
2SK2037
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transistor marking 9D
Abstract: 2SK1827
Text: 2SK1827 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 827 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.1 ± 0.1 1.25 ± 0.1 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode
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2SK1827
SC-70
transistor marking 9D
2SK1827
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Untitled
Abstract: No abstract text available
Text: 2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Marking
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2SK1826
O-236MOD
SC-59
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PDF
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2SK2034
Abstract: No abstract text available
Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 µs typ.
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2SK2034
2SK2034
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2SK2823
Abstract: No abstract text available
Text: 2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment High Speed Switch Applications Analog Switch Applications Unit: mm • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V
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2SK2823
O-236MOD
SC-59
2SK2823
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2SK2824
Abstract: No abstract text available
Text: 2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment High Speed Switch Applications Analog Switch Applications Unit: mm • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V
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2SK2824
SC-70
2SK2824
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