XENPAK
Abstract: XENPAK DATA SHEET XENPAK-10GB-ER-AS XENPAK-10GB-ER
Text: XENPAK-10GB-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber XENPAK-10GB-ER-AS Overview Agilestar's XENPAK-10GB-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot
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XENPAK-10GB-ER-AS
10GBASE-ER
1550nm,
XENPAK-10GB-ER-AS
10GBd
1550nm
80SERVED
XENPAK
XENPAK DATA SHEET
XENPAK-10GB-ER
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10GBASE-E
Abstract: avalanche photodiode 1550nm sensitivity 10G PIN photodiode 10G avalanche photodiode
Text: 10G-XNPK-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber 10G-XNPK-ER-AS Overview Agilestar's 10G-XNPK-ER-AS XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The 10G-XNPK-ER-AS is a
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10G-XNPK-ER-AS
10GBASE-ER
1550nm,
10G-XNPK-ER-AS
1550nm
10GBASE-ER
10GBASE-E
avalanche photodiode 1550nm sensitivity
10G PIN photodiode
10G avalanche photodiode
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10GBASE-ER
Abstract: XENPAK-10GB-ER
Text: 10GBASE-ER-AS DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber XENPAK-10GB-ER Overview Agilestar's 10GBASE-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The 10GBASE-ER-AS is a
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10GBASE-ER-AS
10GBASE-ER
1550nm,
XENPAK-10GB-ER
10GBASE-ER-AS
10GBd
1550nm
10GBASE68
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10Gb
Abstract: photodetector 1550nm pin 10gb photodiode 1550nm 10gb
Text: X2-10GB-ER-AS DATA SHEET 10GBASE-ER X2 Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber. X2-10GB-ER-AS Overview Agilestar's X2-10GB-ER-AS 10GBd X2 optical transceivers are designed for St orage, IP network and LAN, it is a hot pluggable module in
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X2-10GB-ER-AS
10GBASE-ER
1550nm,
X2-10GB-ER-AS
10GBd
1550nm
10Gb
photodetector 1550nm pin 10gb
photodiode 1550nm 10gb
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 10GBASE-ER XENPAK Transceiver, 1550nm, SC Connectors, 40km over Single-Mode Fiber SMC10GXEN-ER-AS Overview Agilestar's SMC10GXEN-ER-AS 10GBd XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The SMC10GXEN-ER-AS is a
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10GBASE-ER
1550nm,
SMC10GXEN-ER-AS
10GBd
1550nm
10GBASE-ER
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XENPAK
Abstract: XENPAK-10GB-ER
Text: DATA SHEET XENPAK-10GB-ER+-AS Overview Agilestar's XENPAK-10GB-ER+-AS XENPAK optical transceiver is designed for Storage, IP network and LAN. It is a hot pluggable module in the Z-direction that is mainly usable in typical router/switch line card applications. The XENPAK-10GB-ER+-AS is a
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XENPAK-10GB-ER
1550nm
10GBASE-ER
10GBASE-ER
XENPAK
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CPVS-ER11-1S-12P
Abstract: transistor 12p smd CBW095 12p smd ER11 3C92 3C96 CPVS-ER11-1S-10P
Text: FERROXCUBE DATA SHEET ER11/2.5/6 Planar ER cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube Planar ER cores and accessories ER11/2.5/6 CORE SETS Effective core parameters SYMBOL PARAMETER handbook, halfpage VALUE UNIT Σ I/A core factor (C1)
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ER11/2
CBW095
CPVS-ER11-1S-12P
transistor 12p smd
CBW095
12p smd
ER11
3C92
3C96
CPVS-ER11-1S-10P
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240950
Abstract: Intel487 SX intel overDrive SS1203 NTE cross a2jc
Text: in te l INTEL486 FAMILY OF MICROPROCESSORS LOW POWER VERSION DATABOOK Low Pow er Intel486™ SX C P U /ln te l4 8 7 TM SX MCP Low Pow er Intel486 DX CPU • Low er P ow er Dissipation — Dynamic Frequency Scalability ■ — Icc m ax Reduced to 1 5 0 mA a t 2 MHz
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INTEL486TM
Intel486
168-Lead
Intel487TM
240950
Intel487 SX
intel overDrive
SS1203
NTE cross
a2jc
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RSN 312 H 24
Abstract: LM 2545 2222 035 56101 ty 2553
Text: Aluminum Electrolytic Capacitors Power, Snap-in, Long Life, Standard PUM-SI-157 PSM-SI-056 PUL-SI-159 P ow er Ultra M iniature Snap-In P ow er Standard M iniature Snap-In P o w er Ultra Long Life Snap-In U s e f u l life 2500 h/85 C 12 000 h/85 C 2 500 h/105 C
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PUM-SI-157
PSM-SI-056
PUL-SI-159
h/105
PA01-A
RSN 312 H 24
LM 2545
2222 035 56101
ty 2553
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2N5915
Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Text: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in
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N5914
2N5915
2N5915
470MHz
2N5914
2N5914
ss3763r3
VK20009-3B
VK200093B
ta7409
rca 632
rca power transistor
14-150 pf 424
VK200-093B
C3097
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT501OJ
soov44a
OT-227
APT5010JVR
E145592
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT20M22JVR 200V 97A 0.022Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT20M22JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: APT10M07JVR A d van ced P o w er Te c h n o l o g y 100V 225A 0.007Q POWER MOS V‘ Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT10M07JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: ER Cores ER 9,5 For compact transformers, preferably SMDs » Magnetic characteristics pei set If/A !t Ae - 1,58 13,3 8,41 120 i ! i l l / : \ W mm' mm mm' mm-1 -i \ Approx. weight 0,6 g/set n j £ Í . ER 9,5 cores Dimension .0“ Typ A. B 65 523 Mate
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B65523-J-R87
B66347-G-X127
B66348-A1018-T1
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apt10025
Abstract: No abstract text available
Text: • R r M ADVANCED A P T 10 0 2 5 JV R po w er Te c h n o l o g y 1000v 34a 0.250Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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1000v
OT-227
APT10025JVR
E145592
apt10025
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APT5012JNU2
Abstract: tl3060 rrmk 1
Text: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT
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APT5012JNU2
5012JWU2
OT-227
APT5012JNU2
tl3060
rrmk 1
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Untitled
Abstract: No abstract text available
Text: • r R M ADVANCED A P T 10 0 5 0 J V R po w er Te c h n o l o g y 1000v i9a o.sooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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1000v
OT-227
APT10050JVR
E145592
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pv0402p
Abstract: 1002 ringer
Text: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M O SFET PHOTOVOLTAIC RELAY P o w er ic Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC General Description
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PV0402P
120mA
PV0402P
RH89BB,
1002 ringer
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Untitled
Abstract: No abstract text available
Text: ¥ LM ▼ J^ r !n n M W W f W" PI74FCT157T/257T 25Q Series PI74FCT2157T/2257T Fast CMOS Quad 2-Input Multiplexer Product Features: • • Product Description: P I7 4 F C T 157/257/2157/2257T is pin com patible with bipolar FAST Series at a higher speed and low er pow er
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PI74FCT157T/257T
PI74FCT2157T/2257T
157/257/2157/2257T
16-pin
PI74FC
/2257A
/2257C
PS2010A
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I282
Abstract: No abstract text available
Text: SO LD ER SUFFIX CUSTO M ER TERMINAL RoH S L E A D P b -F R E E — LF3 Sn 1 00% Yes Yes .055 REF. [1.40] 00 1 .205 MAX. [5.20] UAV .276 MAX [7.00] LOT CODE & DATE CODE SOLDER SUFFIX INDICATES INDUCTANCE VALUE .157 [4.00] .098(2) [2.50] AREA REPRESENTS TERMINAL PAD DIMENSIONS
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GBI--282
--720R--
I-282
I282
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A APT5010JVFR pow er Te c h n o lo g y " 500v POWER MOS V 44a 0.1 o o q FREDFET P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,
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APT5010JVFR
OT-227
E145592
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8030J
Abstract: No abstract text available
Text: A P T 8030J V F R • R A dvanced W *Æ POW ER Te c h n o lo g y soov 2sa 0.300Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,
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8030J
OT-227
E145592
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apt50m85jvr
Abstract: No abstract text available
Text: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT50M85JVR
OT-227
APT50M85JVR
E145592
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Untitled
Abstract: No abstract text available
Text: M ITEL DCR1375SBA Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4654 - 2.2 DS4654 - 2.3 APPLICATIONS • High V oltage Pow er C onverters. ■ High V oltage Pow er Supplies. ■ M otor C ontrol. March 1998 KEY PARAMETERS V DRM
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DS4654
DCR1375SBA
8000A
DCR1375SBA28
DCR1375SBA27
DCR1375SBA26
DCR1375SBA25
DCR1375SBA24
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