cgs resistor
Abstract: microstrip OZ 960 G200 20222
Text: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures
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220QBK-ND
1-877-GOLDMOS
1522-PTF
cgs resistor
microstrip
OZ 960
G200
20222
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10007
Abstract: capacitor 560 pF capacitor
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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Powe917-ND
P5276
1-877-GOLDMOS
1522-PTF
10007
capacitor 560 pF capacitor
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F 10007
Abstract: G200 10007
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
F 10007
G200
10007
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G200
Abstract: 10007
Text: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
G200
10007
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ericsson 10007
Abstract: ca 3161 e IC
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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PC56106
1-877-GOLDMOS
1522-PTF
ericsson 10007
ca 3161 e IC
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G200
Abstract: PTF 10007
Text: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold
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P5276
1-877-GOLDMOS
1522-PTF
G200
PTF 10007
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TRIMMER capacitor 5-60 pF
Abstract: G200 CDS4010 gps 9725
Text: PTF 10052 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization
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5801-PC
P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
TRIMMER capacitor 5-60 pF
G200
CDS4010
gps 9725
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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PTF 10049
Abstract: No abstract text available
Text: ERICSSON ^ 3 Contents PTF 10007 . 3-41 PTF 10009. 3-71 PTE 10015. 3-45
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ericsson 10007
Abstract: c 2575 gs
Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface
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ate-Sou05
ericsson 10007
c 2575 gs
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ericsson 10007
Abstract: s 10007
Text: ERICSSON í PTF 10007 35 Watts, HF -1.0 GHz LDMOS Field Effect T ra n s is to r Description The PTF 10007 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GFIz. It is rated at 35 watts minimum output power. Nitride surface
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