ERICSSON 10027 Search Results

ERICSSON 10027 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ADL5591ACPZ-R7		Analog Devices	EMOD GSM ASIC FOR ERICSSON 180
ADL5590ACPZ-R7		Analog Devices	EMOD GSM ASIC FOR ERICSSON 180

ERICSSON 10027 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
PTF 10049 Abstract: No abstract text available Text: ERICSSON ^ 3 Contents PTF 10007 . 3-41 PTF 10009. 3-71 PTE 10015. 3-45	OCR Scan	PDF
PTF10027 Abstract: ericsson 10027 f 0952 Text: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation	OCR Scan	PDF	IEC-68-2-54 Std-002-A P4917-ND P5276 5801-PC 20AWG, PTF10027 ericsson 10027 f 0952
ic 0941 Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947 Text: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation	OCR Scan	PDF	P4917-ND P5276 5801-PC ic 0941 ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947