EEFSX0D331EY
Abstract: aj24 diode fairchild MLB-201209-0120P-N2 RS482M RTL8101L smd diode S4 69a IXP450(218S4PASA12G)SB450 transistor C636 foxconn X8A01431AFI1H
Text: 5 4 3 2 1 First International Computer,Inc D D Protable Computer Group C HW Department Board name : Mother Board Schematic 1. Schematic Page Description : Project : KR2W_K8_ATI RS482M+SB450 2. PCI & IRQ & DMA Description : Version : 0.1 ES 3. Block Diagram :
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RS482M
SB450
RS482M
EEFSX0D331EY
aj24 diode fairchild
MLB-201209-0120P-N2
RTL8101L
smd diode S4 69a
IXP450(218S4PASA12G)SB450
transistor C636
foxconn
X8A01431AFI1H
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xgold
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany
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IEC61000-4-2
xgold
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SCHEMATIC DIAGRAM OF POWER factor controller DEVI
Abstract: BCR450 AN105 infineon TDA4863 application note TDA4863G led constant current driver 110v, 350mA EVALLED-TDA4863-40W transformer 230V 16V 350mA AN186 90V, 350mA LED driver
Text: BCR4 50, TDA48 63 40W LED Street an d Ind oor li ghtin g de mons trator boa rd Application Note AN186 Revision: 1.0 Date: 18.12.2009 www.infineon.com/lighting RF and Protecti on Devi c es Edition 18.12.2009 Published by Infineon Technologies AG 81726 Munich, Germany
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TDA48
AN186
-TDA4863G-40W
V00D0
EVALLED-TDA4863G-40W
EVALLED-TDA4863G-40W
TDA4863
TLE4205G
SCHEMATIC DIAGRAM OF POWER factor controller DEVI
BCR450
AN105 infineon
TDA4863 application note
TDA4863G
led constant current driver 110v, 350mA
EVALLED-TDA4863-40W
transformer 230V 16V 350mA
AN186
90V, 350mA LED driver
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MA129
Abstract: MA6X129
Text: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 1.50+0.25 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol
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2002/95/EC)
MA6X129
MA129)
MA129
MA6X129
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GN01038B
Abstract: No abstract text available
Text: GaAs MMICs GN01038B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 ue pl d in an c se ed lud pl vi an m m es si
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GN01038B
GN01038B
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GN01067
Abstract: No abstract text available
Text: GaAs MMICs GN01067B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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GN01067B
GN01067
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2SC2404
Abstract: XN06534 XN6534
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06534 (XN6534) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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2002/95/EC)
XN06534
XN6534)
2SC2404
XN06534
XN6534
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GN01068B
Abstract: No abstract text available
Text: GaAs MMICs GN01068B GaAs IC with built-in ferroelectric For preamplifier of the PDC transmitting section unit: mm • Features +0.2 +0.25 1.5 –0.05 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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GN01068B
GN01068B
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01064B GaAs IC with built-in ferroelectric Variable gain amplifier for a cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN01064B
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MA125
Abstract: MA6X125
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X125 (MA125) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
MA6X125
MA125)
MA125
MA6X125
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN02023B GaAs IC with built-in ferroelectric Mixer with local amplifier for cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN02023B
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GN02022B
Abstract: No abstract text available
Text: GaAs MMICs GN02022B GaAs IC with built-in ferroelectric Mixer with local amplifier for cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN02022B
GN02022B
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GN01046B
Abstract: No abstract text available
Text: GaAs MMICs GN01046B GaAs IC with built-in ferroelectric For front-end amplifier of the PHS receiving section unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN01046B
GN01046B
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01058B GaAs IC with built-in ferroelectric Dual band-capable Low Noise Amplifier LNA for PDC unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN01058B
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gn01071b
Abstract: No abstract text available
Text: GaAs MMICs GN01071B GaAs IC with built-in ferroelectric Low-noise amplifier for CDMA unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in
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GN01071B
gn01071b
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GN02019B
Abstract: nf 820
Text: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN02019B
GN02019B
nf 820
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01601 (XN1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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2002/95/EC)
XN01601
XN1601)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04601 (XN4601) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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XN04601
XN4601)
2SD0601A
2SD601A)
2SB0709A
2SB709A)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04609 (XN4609) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc
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2002/95/EC)
XN04609
XN4609)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05601 (XN5601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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XN05601
XN5601)
2SB0709A
2SB709A)
2SD0601A
2SD601A)
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se
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XN04390
UNR212X
UN212X)
UNR2223
UN2223)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04315 (XN4315) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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XN04315
XN4315)
UNR2215
UN2215)
UNR2115
UN2115)
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Untitled
Abstract: No abstract text available
Text: L ifm TECHNOLOGY LTC 1517-3.3 M icropow er, R eg u late d 3.3V C h a rg e Pum p in a 5-Pin SOT-23 P a c ka g e FEATU R ES D C S C R IP TIO fl • Ultra low Power: Ice = &MA Typ ■ Short-Circuit/Thermal Protected ■ 3.3V ±4% Regulated Output ■ V|\j Range: 2V to 4.4V
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OCR Scan
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045in2)
700kHz
OT-23
OT-23
LTC1515
LTC1516
LTC1517-5
LTC1522
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ERI - 35 - 2 YE 0515
Abstract: transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
Text: [ 1 ] Quick Selector by Type [2 ] Quick Selector Guide OI 1. Quick Selector by Type [2 ] Quick Selector Guide 1. Quick Selector by Type [2 ] Quick Selector Guide E E E E 1. Quick Selector by Type Equivalent Circuit [2 ] 2. Package Types 18 Quick Selector Guide
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OCR Scan
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80MIN.
120-4O
22kil
RN1001
47kfi
RN1001
RN2001
RN1002
RN2002
ERI - 35 - 2 YE 0515
transistor 2SC2458
diode marking YF
RN1241A
TRANSISTOR MARKING YB
MQ SC-62
2SA1314
2SC3326
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