transistor ESM 30
Abstract: esm diodes transistor ESM
Text: SEMICONDUCTOR ESM PACKAGE DIMENSION E B D H G A 2 1 3 DIM A B C D E G H C J J MILLIMETERS _ 0.20 1.60 + _ 0.10 0.85+ _ 0.10 0.70 + 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 + ESM 2003. 5. 30 Revision No : 1 1/1
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esm-ba2
Abstract: ESM-BT421 esm 107 ESM-BA303 ESM-BT411 ESM-BA202 ESM-BT401 ESM-BA302 ESM-BA201 ESM-2H201
Text: Safety Relays ESM/ ESM-F More than safety. Safety More than safety. Around the world – the Swabian specialists in motion sequence control for mechanical and systems engineering. Emil Euchner, the company’s founder and inventor of the multiple limit switch, circa 1928.
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PG05EAESM
Abstract: No abstract text available
Text: SEMICONDUCTOR PG05EAESM MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking No. 2008. 3. 6 Item Marking Description Device Mark EA PG05EAESM Revision No : 0 1/1
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PG05EAESM
PG05EAESM
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KTJ6131E
Abstract: Marking EB
Text: SEMICONDUCTOR KTJ6131E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking EB No. 2004. 2. 11 Item Marking Description Device Mark EB KTJ6131E Revision No : 0 1/1
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KTJ6131E
KTJ6131E
Marking EB
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marking p4
Abstract: KRA317E
Text: SEMICONDUCTOR KRA317E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P4 No. 2000. 12. 27 Item Marking Description Device Mark P4 KRA317E hFE Grade - - Revision No : 0 1/1
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KRA317E
marking p4
KRA317E
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marking B3
Abstract: KDS121E
Text: SEMICONDUCTOR KDS121E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking B3 No. 2000. 12. 27 Item Marking Description Device Mark B3 KDS121E hFE Grade - - Revision No : 0 1/1
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KDS121E
marking B3
KDS121E
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KRA318E
Abstract: MARK P5 marking P5
Text: SEMICONDUCTOR KRA318E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P5 No. 2000. 12. 27 Item Marking Description Device Mark P5 KRA318E hFE Grade - - Revision No : 0 1/1
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KRA318E
KRA318E
MARK P5
marking P5
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KRC409E
Abstract: marking NJ
Text: SEMICONDUCTOR KRC409E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NJ No. Item Marking 1 Device Mark NJ KRC409E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC409E
KRC409E
marking NJ
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marking n6
Abstract: KRC419E MARK N6
Text: SEMICONDUCTOR KRC419E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N6 No. Item Marking 1 Device Mark N6 KRC419E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC419E
marking n6
KRC419E
MARK N6
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KRA306E
Abstract: marking pf
Text: SEMICONDUCTOR KRA306E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PF No. Item Marking 1 Device Mark PF KRA306E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRA306E
KRA306E
marking pf
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KTA2012E
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2012E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking SZ No. Item Marking 1 Device Mark SZ KTA2012E 2 hFE Grade - - 02.01.04 Revision No : 00 Description 1/1
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KTA2012E
KTA2012E
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KDR732
Abstract: KDR732E
Text: SEMICONDUCTOR KDR732 MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking UZ No. 2001. 3. 9 Item Marking Description Device Mark UZ KDR732E hFE Grade - - Revision No : 0 1/1
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KDR732
KDR732E
KDR732
KDR732E
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marking NM
Abstract: KRC411E
Text: SEMICONDUCTOR KRC411E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NM No. 2005. 11. 11 Item Marking Description Device Mark NM KRC411E hFE Grade - - Revision No : 0 1/1
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KRC411E
marking NM
KRC411E
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KDR331E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR331E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking UW No. 2001. 3. 9 Item Marking Description Device Mark UW KDR331E hFE Grade - - Revision No : 0 1/1
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KDR331E
KDR331E
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marking n4
Abstract: KRC417E N4 MARKING
Text: SEMICONDUCTOR KRC417E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N4 No. Item Marking 1 Device Mark N4 KRC417E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC417E
marking n4
KRC417E
N4 MARKING
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KRA309E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA309E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PJ No. Item Marking 1 Device Mark PJ KRA309E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRA309E
KRA309E
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marking PM
Abstract: KRA311E
Text: SEMICONDUCTOR KRA311E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PM No. 2000. 12. 27 Item Marking Description Device Mark PM KRA311E hFE Grade - - Revision No : 0 1/1
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KRA311E
marking PM
KRA311E
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KRC412E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC412E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NN No. Item Marking 1 Device Mark NN KRC412E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC412E
KRC412E
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ESM261
Abstract: esm262 ci 7410 ESM 261
Text: ESM 261 ESM 262 PNP SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE E Compi. of ESM 217, 218 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E Monolithic construction C o nstruction m o n o lith iq u e
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OCR Scan
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O-220
drawingCB-117on
CB-117
ESM261
esm262
ci 7410
ESM 261
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Untitled
Abstract: No abstract text available
Text: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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diode ESM 245-1000
Abstract: ESM 310 esm diodes diode esm245 ESM245-1000 diode ESM 44 QQQ233Q ESM246 ESM245-100 AIO22
Text: S — T H O M S O N S I C I D • 7 ' 7 59C 0 2 3 2 3 O THOMSON-CSF C 1 2 ,:1 2 3 7 D T-03 2 3 2 3 fi -A.I ESM 245-50, R ESM 245-1000, (R) DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
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1/4-28UNF
310cm
CB-34)
diode ESM 245-1000
ESM 310
esm diodes
diode esm245
ESM245-1000
diode ESM 44
QQQ233Q
ESM246
ESM245-100
AIO22
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ESM260
Abstract: ESM259 ESM213
Text: ESM 259 ESM 260 PNP SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE S Compì, of ESM 213, 214 P R E L IM IN A R Y D A TA N O T IC E PR EL IM IN A IR E Monolithic construction
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T0-220
drawingCB-117on
CB-117
stated260
ESM260
ESM259
ESM213
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SC-89
Abstract: No abstract text available
Text: - 2 S A 1 A Nane JEDEC JE][TA Toshiba Uni t i nn ESM - S C -8 9 1-2SA1A D iscrete Semiconductor In tegrated Circuit May 2005
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SC-89
2005-2SA1A
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DIODE REDRESSEMENT
Abstract: esm 310 BP 703AL diode ESM 15 ESM 355 D10SG JEDEC to 243 ST TNE 0235 GQG531S CB-262
Text: 1 S IC S G S -^THOMSON V D I T lS Iia ? D D O a iO I ESM 243-50, R ESM 243-400, (R) T H O M S O N -C S F DIVISION SEMICONMJC1ÏURS OISCMT5 SUPERSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES DIODES DE R E D R ESSEM EN T RAPID ES 59C 02309 D 7~‘ 0 J ' i /
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CB-210)
0D053b0
CB-19)
CB-428)
CB-244
DIODE REDRESSEMENT
esm 310 BP
703AL
diode ESM 15
ESM 355
D10SG
JEDEC to 243 ST
TNE 0235
GQG531S
CB-262
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