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    EUPEC BSM 25 GD 120 Search Results

    EUPEC BSM 25 GD 120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    module bsm 20 gp 60

    Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
    Text: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power


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    mid-80s, products/36/3622 module bsm 20 gp 60 module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge PDF

    BSM 50 GX 120 DN2

    Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
    Text: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable


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    50GD120DN2G 75GD120DN2 100GD120DN2 100GT120DN2 150GT120DN2 200GT120DN2 DDB6U84N* 0A/1200V DDB6U100N* BSM 50 GX 120 DN2 bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree PDF

    EUPEC DD 105 N 16 L

    Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
    Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc


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    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


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    D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd PDF

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


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    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


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    E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 PDF

    Eupec BSM

    Abstract: No abstract text available
    Text: Technische In form atio n /T ech n ical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC vorläu fige Daten p relim inary data H ö ch stzu lässig e W erte / M axim um rated values K o lle k to r-E m itte r-S p e rrs p a n n u n g VcES 600 V T c = 8 0 °C


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