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    EUPEC T 821 Search Results

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    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    EUPEC T 691 S 30 thyristor

    Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
    Text: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]


    Original     		PDF

    EUPEC Thyristor T 1059

    Abstract: thyristor t 718 n thyristor T 218 N EUPEC Thyristor T 869 EUPEC t 1209 EUPEC Thyristor 1901 DIODE 4003 EUPEC T 1078 F EUPEC T 821 Emitter Turn-Off thyristor
    Text: . power the Home Products N-Thyristors News Contact Editorials Job Offers Company Search Site Content VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs the figures in the part-no. represent the current rating [A]


    Original     		PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    Untitled

    Abstract: No abstract text available
    Text: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF BGA713L7

    4G lte RF Transceiver

    Abstract: RF transceiver LTE 3G HSDPA circuits diagram circuit diagram transceiver 3g BGA736L16 murata LTE duplexer band 20 lte RF Transceiver MURATA Duplexers BGA711L7 BGA735N16
    Text: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 2.7 kΩ Application Note AN238 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by


    Original     		PDF BGA748N16 AN238 AN238, BGA748N16 4G lte RF Transceiver RF transceiver LTE 3G HSDPA circuits diagram circuit diagram transceiver 3g BGA736L16 murata LTE duplexer band 20 lte RF Transceiver MURATA Duplexers BGA711L7 BGA735N16

    4G lte RF Transceiver

    Abstract: UMTS band 1 SMA duplexer LTE filter band 13 LTE bandpass filter PIN DIODES OFFER HIGH POWER HF BAND SWITCHING LTE rf front end 3g phone CIRCUIT diagram bgsf18 3G HSDPA circuits diagram BGA749N16
    Text: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s 4,13 and 17 with Reference Resistor Rref= 8.2 kΩ Application Note AN239 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02 Published by


    Original     		PDF BGA748N16 AN239 AN239, BGA748N16 4G lte RF Transceiver UMTS band 1 SMA duplexer LTE filter band 13 LTE bandpass filter PIN DIODES OFFER HIGH POWER HF BAND SWITCHING LTE rf front end 3g phone CIRCUIT diagram bgsf18 3G HSDPA circuits diagram BGA749N16

    4G lte RF Transceiver

    Abstract: murata LTE saw filter UMTS band 1 SMA duplexer 4G LTE PA murata LTE duplexer band 20 HSPA modem LTE bandpass filter AN241 LTE rf front end LTE filter band 40
    Text: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 1, 2 and 5 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 241 Revision: Rev. 1.0 2010-08-31 RF and P r otecti on D evic es Edition 2010-08-31 Published by


    Original     		PDF BGA735N16 AN241, BGA735N16 AN241 4G lte RF Transceiver murata LTE saw filter UMTS band 1 SMA duplexer 4G LTE PA murata LTE duplexer band 20 HSPA modem LTE bandpass filter AN241 LTE rf front end LTE filter band 40

    4G lte RF Transceiver

    Abstract: 3G HSDPA circuits diagram murata LTE saw filter 3g modem circuit murata LTE duplexer band 20 LTE bandpass filter BGA735N16 lte RF Transceiver maxim transceiver 4G LTE layout of mobile bug system
    Text: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 3, 7 and 2 0 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 233 Revision: Rev. 1.0 2010-08-24 RF and P r otecti on D evic es Edition 2010-08-24


    Original     		PDF BGA735N16 BGA735N16 AN233, AN233 4G lte RF Transceiver 3G HSDPA circuits diagram murata LTE saw filter 3g modem circuit murata LTE duplexer band 20 LTE bandpass filter lte RF Transceiver maxim transceiver 4G LTE layout of mobile bug system

    4G lte RF Transceiver

    Abstract: lte RF Transceiver transceiver 4G LTE X-GOLD 618 murata WCDMA Band 8 duplexer murata LTE saw filter Taiyo Yuden Duplexer UMTS band 1 SMA duplexer BGA728L7 for3g
    Text: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s I, II , V an d VI II with Reference Resistor Rref= 8.2 kΩ Application Note AN237 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02


    Original     		PDF BGA748N16 AN237 AN237, BGA748N16 4G lte RF Transceiver lte RF Transceiver transceiver 4G LTE X-GOLD 618 murata WCDMA Band 8 duplexer murata LTE saw filter Taiyo Yuden Duplexer UMTS band 1 SMA duplexer BGA728L7 for3g

    aktive elektronische bauelemente ddr

    Abstract: hamatech rde 090 0 280 130 023 bosch 735 linear technologie bosch 0 130 002 562 OSRAM TRANSCEIVER stu 407 bauelemente DDR 101B
    Text: Inhaltsverzeichnis Lagebericht und Konzernlagebericht . . . . . . . Bericht des Aufsichtsrates . . . . . . . . . . . . . . . Konzern-Gewinn- und Verlustrechnungen . . . Konzernbilanzen . . . . . . . . . . . . . . . . . . . . . Entwicklung des Konzerneigenkapitals . . . . .


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    4G lte RF Transceiver

    Abstract: LTE filter band 13 for3g murata WCDMA duplexer LTE duplexer 700 MHz BGA749 lte RF Transceiver BGA728L7 LTE Receiver BGA711L7
    Text: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s I, II , V an d VI II with Reference Resistor Rref= 2.7 kΩ Application Note AN236 Revision: Rev. 1.0 2010-08-26 RF and Protecti on Devi c es Edition 2010-08-26


    Original     		PDF BGA748N16 AN236 AN236, BGA748N16 4G lte RF Transceiver LTE filter band 13 for3g murata WCDMA duplexer LTE duplexer 700 MHz BGA749 lte RF Transceiver BGA728L7 LTE Receiver BGA711L7

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    EUPEC TT 106 N 12

    Abstract: EUPEC TT 66 n 12 EUPEC T 691 S EUPEC T 1078 F EUPEC tt 66 N 16 t930 S2800 T1052 EUPEC tt 250 N 18 EUPEC t 930 s
    Text: Type T 691 S / i 2dt Itrmsm Itsm Vdrm Vrrm 10 ms, 10 ms, Vdsm = Vdrm tvj max tvj max Vrsm = Vrrm + 100 V A2s kA A V 2800 3000 34032^7 0 0 0 1 3 5 ^ IflS blE D EUPEC Fast thyristors Itavm/Ic V TO rT 180 °el sin. t»j= A/°C V 0,5 A/US 200 Wj max Outline (dv/dt)cr


    OCR Scan     		PDF T1052 T1078 EUPEC TT 106 N 12 EUPEC TT 66 n 12 EUPEC T 691 S EUPEC T 1078 F EUPEC tt 66 N 16 t930 S2800 EUPEC tt 250 N 18 EUPEC t 930 s

    t930

    Abstract: T 698 T1052 EUPEC T 691 S EUPEC T 821
    Text: _ ±iU . x EUPEC Fast thyristors Type Itrm sm V drm Itsm blE ]> • / i 2dt W m^C V TO 34032^7 DDGIBST IflS * U P E C rT (di/dt)cr (dv/dt)cr Vgt Igt RthJC tv j m ax Outline V rrm V dsm = V drm V rsm = V rrm T 691 S T 698 F + 100 V 10 ms, 10 ms, tvi = D IN


    OCR Scan     		PDF T1052 T1078 t930 T 698 EUPEC T 691 S EUPEC T 821

    ESJA 52-12

    Abstract: DT 8210 high voltage diodes HS 134 "DO 25 s8" D21-3-5 DO 25 s8 f 8212 do24S10 TV20
    Text: ^ 5 Type LjIE J> m EUPEC High voltage diodes V rrm iFSM^vj I FAVM Irm 1 t = 10 ms ÎA = 45 °C tvj = kV A/°C mA RthJA tvj max °c/w °c O utline h 25 °C iF = 0,2 A -di/dt = 0,2 A /ns 1 H A /°C mA 9C2 10 C2 13 C2 16 D2 18 D2 20 D2 13.5 14 17.5 22.5 27.5


    OCR Scan     		PDF 34G3ECI7 QDD13S3 ESJA 52-12 DT 8210 high voltage diodes HS 134 "DO 25 s8" D21-3-5 DO 25 s8 f 8212 do24S10 TV20

    DT 8210

    Abstract: DO, 25 s8 DO,42 S5 hs 5320 DO 25 s8 24810 tv20d2 esja esja 24 "DO 25 s8"
    Text: EUPEC High voltage diodes Type V rrm I FSM^vj I FAVM i R^vj 1 t = 10 ms ÎA = Vr = 4 5 °C V rrm mA HA/°C Ir m L IE RthJA tvj max D 34G32R7 00D13S3 HTH IUPEC O utline tvj = 25 °C iF = 0,2 A -di/dt = 0,2 A/ns kV A /°C mA °C/W °c 9C2 10 C2 13 C2 16 D2


    OCR Scan     		PDF 00D13S3 DT 8210 DO, 25 s8 DO,42 S5 hs 5320 DO 25 s8 24810 tv20d2 esja esja 24 "DO 25 s8"

    T12F

    Abstract: AL 2450 dv EUPEC T 760 S101 T1052 T60F EUPEC T 821 EUPEC tt 25 N 12 EUPEC TT 66 n 12 EUPEC tt 66 N 16
    Text: Fast thyristors •trmsm 1 Type 4TE D It s m / ¡ 2dt • It a v m ^ 34Q35T7 c V TO it DOOOlOfci TaT ■ UPEC EUPE (di/dt)cr (dv/dt)cr Vgt Ig t Rthjc tvj max Outline 1 > ■ T 12 F A 10 ms, 10 ms, 180 °el tv, DIN DIN Wj = tv j Wj max tv| max sin. tvj max


    OCR Scan     		PDF T1052 T1078 T12F AL 2450 dv EUPEC T 760 S101 T60F EUPEC T 821 EUPEC tt 25 N 12 EUPEC TT 66 n 12 EUPEC tt 66 N 16

    T308

    Abstract: 200n60 41178 T821 T930S T1052 T 290 eupec thyristors EUPEC T 691 S 6210s
    Text: Fast thyristors Type 34Q35T7 MTE D •trm sm V drm Itsm / i 2dt Itavm^ c V TO 10 ms, 10 ms, Ivi m ax 180 °el sin. tv, •vj max tvj m ax A A2S A/°C V UPEC DOOOlDfe. TBT (di/dt)cr (dv/dt)cr Ivj max DIN IEC 747-6 DIN IEC 747-6 m£2 A/flS it EUPE I- a Vgt


    OCR Scan     		PDF 34Q35T7 62-10s T1052 T1078 T308 200n60 41178 T821 T930S T 290 eupec thyristors EUPEC T 691 S 6210s

    thyristor AEG t 10 n 600

    Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
    Text: Cross reference list I Components of eupec with high power and/or high reverse voltage mainly come from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65


    OCR Scan     		PDF

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541